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October 2016
FFSP20120A — Silicon Carbide Schottky Diode
Semiconductor Components Industries, LLC, 2016
FFSP20120A Rev.1.3
www.onsemi.com
1
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter Ratings Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
EAS Single Pulse Avalanche Energy (Note 1) 200 mJ
IFContinuous Rectified Forward Current @ TC < 148 oC 20 A
IF, Max Non-Repetitive Peak Forward Surge Current TC = 25 oC, 10 μs1190A
TC = 150 oC, 10 μs 990 A
IF,SM N o n - R e p e t i t i v e F o r w a r d S u r g e C u r r e n t H a l f - S i ne Pulse, tp = 8.3 ms 135 A
IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 74 A
Ptot Power Dissipation TC = 25 oC 340 W
TC = 150 oC 57 W
TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC
Symbol Parameter Ratings Unit
RθJC Thermal Resistance, Junction to Case, Max. 0.44 oC/W
FFSP20120A
Silicon Carbide Schottky Diode
1200 V, 20 A
Features
• Max Junction Temperature 175 oC
• Avalanche Rated 200 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size and cost.
TO-220-2L
1
1. Cathode 2. Anode
2
1. Cathode 2. Anode
FFSP20120A — Silicon Carbide Schottky Diode
Semiconductor Components Industries, LLC, 2016
FFSP20120A Rev.1.3
www.onsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Reverse Characteristics Figure 4. Current Derating
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFSP20120A FFSP20120A TO-220-2L Tube N/A N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VFForward Voltage
IF = 20 A, TC = 25 oC - 1.45 1.75
VIF = 20 A, TC = 125 oC-1.72
IF = 20 A, TC = 175 oC-22.4
IRReverse Current
VR = 1200 V, TC = 25 oC - - 200
μAVR = 1200 V, TC = 125 oC - - 300
VR = 1200 V, TC = 175 oC - - 400
QCTotal Capacitive Charge V = 800 V - 120 - nC
C Total Capacitance
VR = 1 V, f = 100 kHz - 1220 -
pFVR = 400 V, f = 100 kHz - 111 -
VR = 800 V, f = 100 kHz - 88 -
01234
0
10
20
30
40
IF, FORWARD CURRENT (A)
VF, FORWARD CURRENT (V)
TJ = 175 oC
TJ = 125 oC
TJ = -55 oC
TJ = 25 oC
TJ = 75 oC
200 400 600 800 1000 1200
10-3
10-2
10-1
100
101
IR, REVERSE CURRENT (μA)
VR, REVERESE VOLTAGE (V)
TJ = 175 oC
TJ = 125 oC
TJ = -55 oC
TJ = 25 oC
TJ = 75 oC
1000 1100 1200 1300 1400 1500
0.0
0.2
0.4
0.6
0.8
1.0
IR, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
TJ = 175 oC
TJ = 125 oC
TJ = -55 oC
TJ = 25 oC
TJ = 75 oC
25 50 75 100 125 150 175
0
50
100
150
200
250
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7 D = 1
IF, PEAK FORWARD CURRENT (A)
TC, CASE TEMPERATURE (oC)
Notes:
1: EAS of 200 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 29 A, V = 150 V.
FFSP20120A — Silicon Carbide Schottky Diode
Semiconductor Components Industries, LLC, 2016
FFSP20120A Rev.1.3
www.onsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage
0 200 400 600 800 1000
0
25
50
75
100
125
150
QC, CAPACITIVE CHARGE (nC)
VR, REVERSE VOLTAGE (V)
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
400
PTOT, POWER DISSIPATION (W)
TC, CASE TEMPERATURE (oC)
0 200 400 600 800 1000
0
10
20
30
40
50
EC, CAPACITIVE ENERGY (μJ)
VR, REVERVE VOLTAGE (V)
Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy
Figure 9. Junction-to-Case Transient Thermal Response Curve
10-4 10-3 10-2 10-1 1
0.05
0.1
1
2
DUTY CIRCLE-DESCENDING ORDER
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 0.44 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZθJC(t) + TC
PDM
t1
t2
FFSP20120A — Silicon Carbide Schottky Diode
Semiconductor Components Industries, LLC, 2016
FFSP20120A Rev.1.3
www.onsemi.com
4
Test Circuit and Waveforms
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
L = 0.5mH
5°
3°
5°
3°
4.80
4.30
10.67
9.65
4.09
3.50
3.43
2.54
9.40
8.38
2.54
5.08
16.51
14.22
14.73
13.60
1.02
0.38
6.35 MAX
1.65
1.25
1.91
0.36
M
B A
M
0.36
M
C
A B
A
C
1.40
0.51
7°
3°
6.86
5.84
2.92
2.03
0.61
0.33
5°
3°
5°
3°
B
13.40
12.19
8.89
6.86
0.60 MAX
16.15
15.75
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DRAWING FILE NAME: TO220A02REV5
1 2
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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