A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCBO IC = 20 mA 36 V
BVCES IC = 50 mA 36 V
BVCEO IC = 50 mA 18 V
BVEBO IE = 5.0 mA 4.0 V
ICBO VCB = 15 V 2.0 mA
hFE VCE = 5.0 V IC = 250 mA 5.0 50 ---
Cob VCB = 12.5 V f = 1.0 MHz 45 pF
PG
η
ηη
ηCVCE = 13.5 V POUT = 15 W f = 175 MHz 8.0
60 9.0
65 dB
%
NPN SILICON RF POWER TRANSISTOR
BLV11
DESCRIPTION:
The ASI BLV11 is Designed for
Class C, 12.5 Volt operation in FM
Amplif ier Applications up to 250 MHz.
FEATURES INCLUDE:
PG = 9.0 dB Typical at 175 MHz
Emitter Ballasting
Omnigold™ Metalization System
MAXIMUM RATINGS
IC3.0 A
VCE 18 V
VCB 36 V
PDISS 37 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 4.6 OC/W
PACKAGE STYLE .375 4L FLG
ORDER CODE: ASI10492
1 = Collector 2 = Base
3 & 4 = Em i tter
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Advanced Semiconductor, Inc.:
BLV11