TIP102 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . designed for general–purpose amplifier and low–speed switching applications.

•High DC Current Gain —

hFE = 2500 (Typ) @ IC = 4.0 Adc

•Collector–Emitter Sustaining Voltage — @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105

VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106

VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc

•Monolithic Construction with Built–in Base–Emitter Shunt Resistors

•TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

TIP100,

TIP105

ÎÎÎÎ

TIP101,

TIP106

ÎÎÎÎ

TIP102,

TIP107

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

8.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.64

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load Energy (1)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.56

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

(1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω.

00 20 40 60 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

140

4.0

2.0

1.0

3.0

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP100/D

 Motorola, Inc. 1995













DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

80 WATTS

*Motorola Preferred Device





 



CASE 221A–06

TO–220AB

REV 7

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0) TIP100, TIP105

TIP101, TIP106

TIP102, TIP107

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP100, TIP105

(VCE = 40 Vdc, IB = 0) TIP101, TIP106

(VCE = 50 Vdc, IB = 0) TIP102, TIP107

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cuttoff Current

(VCB = 60 Vdc, IE = 0) TIP100, TIP105

(VCB = 80 Vdc, IE = 0) TIP101, TIP106

(VCB = 100 Vdc, IE = 0) TIP102, TIP107

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

8.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc)

(IC = 8.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

200

ÎÎÎÎ

20,000

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc)

(IC = 8.0 Adc, IB = 80 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 8.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP105, TIP106, TIP107

TIP100, TIP101, TIP102

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

300

200

ÎÎÎ

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Figure 2. Switching Times Test Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

2.0

1.0

0.5

0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10

0.3

0.7

PNP

NPN

td @ VBE(off) = 0 V

approx

+8.0 V

approx

–12 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

51 D1

+4.0 V

VCC

–30 V

TUT

≈

8.0 k

≈

120

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25

3.0

0.2

0.1

0.07

5.0 7.0

     

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

JC(t) = r(t) R

JC = 1.56

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.02 2.0 5.0 20 50 100

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

0.5

IC, COLLECTOR CURRENT (mA)

TJ = 150

Cdc

1 ms

100

0.2

0.1

TIP100, TIP105

TIP101, TIP106

TIP102, TIP107

0.05

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

5 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown

300

0.1 VR, REVERSE VOLTAGE (VOLTS)

30 2.0 5.0 10 20 100500.2 0.5 1.0

C, CAPACITANCE (pF)

100

TJ = 25

Cib

Cob

PNP

NPN

Figure 6. Small–Signal Current Gain

10,000

1.0 f, FREQUENCY (kHz)

10 20 50 100 200 10002.0 5.0 10

3000

500

100

TC = 25

VCE = 4.0 Vdc

IC = 3.0 Adc

1000

PNP

NPN

Figure 7. Capacitance

500

hfe, SMALL–SIGNAL CURRENT GAIN

5000

2000

300

200

     

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

20,000

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

200 0.2 0.3 0.5 1.0 2.0 10

500

1000

300

hFE, DC CURRENT GAIN

2000

3000

VCE = 4.0 V

0.7 3.0

NPN

TIP100, TIP101, TIP102 PNP

TIP105, TIP106, TIP107

Figure 9. Collector Saturation Region

3.0

0.3 IB, BASE CURRENT (mA)

1.0 0.5 1.0 2.0 10 30

1.8

IC = 2.0 A

TJ = 25

4.0 A

2.2

2.6

0.7 5.0

3.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 1.0 2.0 5.0 10

2.5

2.0

1.5

1.0

0.5

TJ = 25

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VBE @ VCE = 4.0 V

3.0

10,000

5000 TJ = 150

–55

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 4.0 V

TJ = 150

C25

–55

1.4

6.0 A

IB, BASE CURRENT (mA)

TJ = 25

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

TJ = 25

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V

5.0 7.0

20,000

0.1

200 0.2 0.3 0.5 1.0 2.0 10

500

1000

300

2000

3000

0.7 3.0

10,000

5000

5.0 7.0

7000

700

3.0 7.0

3.0

0.3

1.0 0.5 1.0 2.0 10 30

1.8

2.2

2.6

0.7 5.0 20

1.4

3.0 7.0

IC = 2.0 A 4.0 A 6.0 A

0.7 7.0

3.0

0.1 0.2 0.3 0.5 1.0 2.0 5.0 10

2.5

2.0

1.5

1.0

0.5 3.00.7 7.0

     

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

     

6 Motorola Bipolar Power Transistor Device Data

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TIP100/D

*TIP100/D*

◊