IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT827A/B HIGH-PERFORMANCE CMOS BUFFER FEATURES: DESCRIPTION: * Faster than AMD's Am29827 series * Equivalent to AMD's Am29827bipolar buffers in pinout/function, speed, and output drive over full temperature and voltage supply extremes * IDT54/74FCT827A equivalent to FASTTM speed * IDT54FCT827B 35% faster than FAST * IOL = 48mA (commercial) and 32mA (military) * Clamp diodes on all inputs for ringing suppression * CMOS power levels (1mW typ. static) * TTL input and output level compatible * CMOS output level compatible * Substantially lower input current levels than AMD's bilopar A max.) Am29800 series (5 * MIlitary product compliant to MIL-STD-883, Class B * Available in the following packages: - Commercial: SOIC - Military: CERDIP, LCC The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. The IDT54/74FCT827 10-bit bus drivers provide high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables for maximum control flexibility. All of the IDT54/74FCT800 high-performance interface family are designed for high-capacitance load drive capability, while providing lowcapacitance bus loading at both inputs and outputs. All inputs have clamp diodes and all outputs are designed for low-capacitance bus loading in highimpedance state. FUNCTIONAL BLOCK DIAGRAM Y Y Y Y Y Y Y Y Y Y 0 1 2 3 4 5 6 7 8 9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND COMMERCIAL TEMPERATURE RANGES OE OE 1 2 OCTOBER 2002 1 (c) 2002 Integrated Device Technology, Inc. DSC-4612/5 IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES 23 Y0 D1 3 22 Y1 D2 4 21 Y2 D3 5 20 Y3 D4 6 19 Y4 D5 7 18 D6 8 D7 9 D2 5 D3 4 3 2 Y3 D4 7 23 Y4 NC 8 22 NC Y5 D5 9 21 Y5 17 Y6 D6 10 20 Y6 16 Y7 D7 11 12 19 Y7 13 OE2 LCC TOP VIEW CERDIP/ SOIC TOP VIEW CAPACITANCE (TA = +25C, F = 1.0MHz) ABSOLUTE MAXIMUM RATINGS(1) Commercial Military Unit -0.5 to +7 -0.5 to +7 V Terminal Voltage -0.5 to VCC -0.5 to VCC V Operating Temperature 0 to +70 -55 to +125 C TBIAS Temperature under BIAS -55 to +125 -65 to +135 C TSTG Storage Temperature -55 to +125 -65 to +150 C PT Power Dissipation 0.5 0.5 W IOUT DC Output Current 120 120 mA Conditions Typ. Max. Unit CIN Input Capacitance VIN = 0V 6 10 pF COUT Output Capacitance VOUT = 0V 8 12 pF NOTE: 1. This parameter is measured at characterization but not tested. with Respect to GND TA Parameter(1) Symbol with Respect to GND VTERM(3) 1 8 Y8 12 1 7 Y9 GND 1 6 OE2 Y9 1 5 NC 14 1 4 GND 11 1 3 D9 D9 1 D8 Y8 Terminal Voltage 2 6 25 24 15 VTERM(2) 2 7 6 10 Rating 2 8 Y2 D8 Symbol Y1 2 Y0 D0 INDEX VCC VCC NC 24 OE1 1 D0 OE1 D1 PIN CONFIGURATION LOGIC SYMBOL NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed Vcc by +0.5V unless otherwise noted. 2. Input and Vcc terminals only. 3. Output and I/O terminals only. D0-9 OE1 OE2 2 10 10 Y0-9 IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES FUNCTION TABLE(1) PIN DESCRIPTION Pin Name I/O OEx I When both are LOW, the outputs are enabled. When either one or both are HIGH, the outputs are High Z. Description Dx I 10-bit data input Yx O 10-bit data output Inputs Outputs OE1 OE2 Dx Yx Function L L L L Transparent L L H H H X X Z X H X Z 3-State NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don't Care Z = High Impedance DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC - 0.2V Commercial: TA = 0C to +70C, VCC = 5.0V 5%, Military: TA = -55C to +125C, VCC = 5.0V 10% Symbol Test Conditions(1) Parameter Min. Typ.(2) Max. Unit VIH Input HIGH Level Guaranteed Logic HIGH Level 2 -- -- V VIL Input LOW Level Guaranteed Logic LOW Level -- -- 0.8 V IIH Input HIGH Current VI = VCC -- -- 5 VI = 2.7V -- -- 5(4) VI = 0.5V -- -- -5(4) VI = GND -- -- -5 VO = VCC VO = 2.7V VO = 0.5V VO = GND -- -- -- -- -- -- -- -- -- -0.7 10 10(4) -10(4) -10 -1.2 -75 VHC VHC 2.4 2.4 -- -- -- -- -120 VCC VCC 4.3 4.3 GND GND 0.3 0.3 -- -- -- -- -- VLC VLC(4) 0.5 0.5 VCC = Max. IIL Input LOW Current IOZH VCC = Max. IOZL Off State (High Impedance) Output Current VIK Clamp Diode Voltage VCC = Min., IIN = -18mA IOS VOH VOL Short Circuit Current Output HIGH Voltage Output LOW Voltage GND(3) VCC = Max., VO = VCC = 3V, VIN = VLC or VHC, IOH = -32A VCC = Min IOH = -300A VIN = VIH or VIL IOH = -15mA MIL IOH = -24mA COM'L VCC = 3V, VIN = VLC or VHC, IOL = 300A VCC = Min IOL = 300A VIN = VIH or VIL IOL = 32mA MIL IOL = 48mA COM'L NOTES: 1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient and maximum loading. 3. Not more than one output should be tested at one time. Duration of the test should not exceed one second. 4. This parameter is guaranteed but not ttested. 3 A A V mA V V IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES POWER SUPPLY CHARACTERISTICS VLC = 0.2V; VHC = VCC - 0.2V Min. Typ.(2) Max. Unit VCC = Max. VIN VHC; VIN VLC -- 0.2 1.5 mA Quiescent Power Supply Current TTL Inputs HIGH VCC = Max. VIN = 3.4V(3) -- 0.5 2 mA Dynamic Power Supply Current(4) VCC = Max. Outputs Open OE1 = OE2 = GND LE = VCC One Input Toggling 50% Duty Cycle VIN VHC VIN VLC -- 0.15 0.25 mA/ MHz Total Power Supply Current(6) VCC = Max. Outputs Open fi = 10MHz VIN VHC VIN VLC (FCT) -- 1.7 4 mA 50% Duty Cycle OE1 = OE2 = GND LE = VCC One Bit Toggling VIN = 3.4V VIN = GND -- 2 5 VCC = Max. Outputs Open fi = 2.5MHz VIN VHC VIN VLC (FCT) -- 3.2 6.5(5) 50% Duty Cycle OE1 = OE2 = GND LE = VCC Eight Bits Toggling VIN = 3.4V VIN = GND -- 5.2 14.5(5) Symbol Parameter ICC Quiescent Power Supply Current ICC ICCD IC Test Conditions(1) NOTES: 1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient. 3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for register devices (zero for non-register devices) fi = Input Frequency Ni = Number of Inputs at fi All currents are in milliamps and all frequencies are in megahertz. 4 IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES SWITCHING CHARACTERISTICS OVER OPERATING RANGE 54/74FCT827A Com'l. Symbol tPLH tPHL tPZH tPZL tPHZ tPLZ Parameter Propagation Delay Dx to Yx Output Enable Time, OE to Yx Output Disable Time, OE to Yx Mil. 54FCT827B Mil. Min.(2) Max. 1.5 6.5 Condition(1) CL = 50pF RL = 500 Min.(2) 1.5 Max. 8 Min.(2) 1.5 Max. 9 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 5pF(3) RL = 500 CL = 50pF RL = 500 1.5 15 1.5 17 1.5 14 1.5 12 1.5 13 1.5 9 1.5 23 1.5 25 1.5 16 1.5 9 1.5 9 1.5 7 1.5 10 1.5 10 1.5 8 NOTES: 1. See test circuit and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. These parameters are guaranteed but not tested. 5 Unit ns ns ns IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES TEST CIRCUITS AND WAVEFORMS V CC SWITCH POSITION 7.0V 500 V OUT VIN Pulse Generator D.U.T . 50pF RT 500 CL Test Switch Open Drain Disable Low Enable Low Closed All Other Tests Open DEFINITIONS: CL = Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator. Octal link Test Circuits for All Outputs DATA INPUT tH tSU TIMING INPUT ASYNCHRONOUS CONTROL PRESET CLEAR ETC. SYNCHRONOUS CONTROL PRESET CLEAR CLOCK ENABLE ETC. 3V 1.5V 0V 3V 1.5V 0V tREM tSU LOW-HIGH-LOW PULSE tW 3V 1.5V 0V HIGH-LOW-HIGH PULSE 3V 1.5V 0V tH 1.5V 1.5V Octal link Pulse Width Octal link Set-Up, Hold, and Release Times ENABLE SAME PHASE INPUT TRANSITION tPLH tPHL OUTPUT tPLH OPPOSITE PHASE INPUT TRANSITION tPHL 3V 1.5V 0V VOH 1.5V VOL DISABLE 3V 1.5V 0V CONTROL INPUT tPZL OUTPUT NORMALLY LOW 3V 1.5V 0V OUTPUT NORMALLY HIGH Octal link Propagation Delay SWITCH CLOSED tPZH SWITCH OPEN tPLZ 3.5V 3.5V 1.5V 0.3V VOL tPHZ 0.3V 1.5V 0V Enable and Disable Times VOH 0V Octal link NOTES: 1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH. 2. Pulse Generator for All Pulses: Rate 1.0MHz; ZO 50; tF 2.5ns; tR 2.5ns. 6 IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES ORDERING INFORMATION XXXX FCT IDT XX Temp. Range Device Type XX Package X Process CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 Blank B Commercial MIL-STD-883, Class B SO Commercial Options Small Outline IC D L Military Options CERDIP Leadless Chip Carrier 827A 827B High Performance CMOS Buffer, 10-Bit 54 74 - 55C to +125C 0C to +70C for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com 7 for Tech Support: logichelp@idt.com (408) 654-6459