MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT54/74FCT827A/B
HIGH-PERFORMANCE CMOS BUFFER
1OCTOBER 2002MILITARY AND COMMERCIAL TEMPERATURE RANGES
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
© 2002 Integrated Device Technology, Inc. DSC-4612/5
FEATURES:
• Faster than AMD's Am29827 series
• Equivalent to AMD's Am29827bipolar buffers in pinout/function,
speed, and output drive over full temperature and voltage
supply extremes
• IDT54/74FCT827A equivalent to FAST™ speed
• IDT54FCT827B 35% faster than FAST
•IOL = 48mA (commercial) and 32mA (military)
• Clamp diodes on all inputs for ringing suppression
• CMOS power levels (1mW typ. static)
• TTL input and output level compatible
• CMOS output level compatible
• Substantially lower input current levels than AMD's bilopar
Am29800 series (5µµ
µµ
µA max.)
• MIlitary product compliant to MIL-STD-883, Class B
• Available in the following packages:
– Commercial: SOIC
– Military: CERDIP, LCC
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
The IDT54/74FCT800 series is built using an advanced dual metal
CMOS technology.
The IDT54/74FCT827 10-bit bus drivers provide high-performance bus
interface buffering for wide data/address paths or buses carrying parity. The
10-bit buffers have NAND-ed output enables for maximum control flexibility.
All of the IDT54/74FCT800 high-performance interface family are de-
signed for high-capacitance load drive capability, while providing low-
capacitance bus loading at both inputs and outputs. All inputs have clamp
diodes and all outputs are designed for low-capacitance bus loading in high-
impedance state.
IDT54/74FCT827A/B
HIGH-PERFORMANCE
CMOS BUFFER
D0
Y
0
D1
Y
1
D2
Y
2
D3
Y
3
D4
Y
4
D5
Y
5
D6
Y
6
D7
Y
7
D8
Y
8
D9
Y
9
OE
1OE
2
MILITARY AND COMMERCIAL TEMPERATURE RANGES
2
IDT54/74FCT827A/B
HIGH-PERFORMANCE CMOS BUFFER
PIN CONFIGURATION
Symbol Parameter(1) Conditions Typ. Max. Unit
CIN Input Capacitance VIN = 0V 6 10 pF
COUT Output Capacitance VOUT = 0V 8 12 pF
CAPACITANCE (TA = +25°C, F = 1.0MHz)
NOTE:
1. This parameter is measured at characterization but not tested.
Symbol Rating Commercial Military Unit
VTERM(2) Terminal Voltage –0.5 to +7 –0.5 to +7 V
with Respect to GND
VTERM(3) Terminal Voltage –0.5 to VCC –0.5 to VCC V
with Respect to GND
TAOperating Temperature 0 to +70 –55 to +125 °C
TBIAS Temperature under BIAS –55 to +125 –65 to +135 °C
TSTG Storage Temperature –55 to +125 –65 to +150 °C
PTPower Dissipation 0.5 0.5 W
IOUT DC Output Current 120 120 mA
ABSOLUTE MAXIMUM RATINGS(1)
NOTES:
1 . Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Input and Vcc terminals only.
3. Output and I/O terminals only.
CERDIP/ SOIC
TOP VIEW
LCC
TOP VIEW
2
3
1
20
19
18
15
16
9
10
D6
D7
D2
D5
D3
D4
D8
23
22
24
21
17
5
6
7
4
8
D0
VCC
OE2
OE1
13
14
11
12
D1
GND
D9
Y6
Y7
Y2
Y5
Y3
Y4
Y8
Y0
Y1
Y9
1
51
6
NC
12 1
31
4
GND
D8
1
71
8
OE2
Y9
Y8
NC
VCC
OE1
D1
D0
Y0
Y1
Y3
NC
Y4
5
6
8
7
9
10
11
1
2
8
43 2 2
72
625
24
22
23
21
20
19
D5
NC
D3
D4
D2
D7
D6
INDEX
Y5
D9
Y2
Y7
Y6
LOGIC SYMBOL
OE1
D0-9 Y0-9
10
OE2
10
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT54/74FCT827A/B
HIGH-PERFORMANCE CMOS BUFFER
3
Symbol Parameter Test Conditions(1) Min. Typ.(2) Max. Unit
VIH Input HIGH Level Guaranteed Logic HIGH Level 2 — — V
VIL Input LOW Level Guaranteed Logic LOW Level — — 0.8 V
IIH Input HIGH Current VI = VCC —— 5
VCC = Max. VI = 2.7V — — 5(4) µA
IIL Input LOW Current VI = 0.5V — — –5(4)
VI = GND — — –5
IOZH VO = VCC —— 10
Off State (High Impedance) VCC = Max. VO = 2.7V — — 10(4) µA
IOZL Output Current VO = 0.5V — — –10(4)
VO = GND — — –10
VIK Clamp Diode Voltage VCC = Min., IIN = –18mA — –0.7 –1.2 V
IOS Short Circuit Current VCC = Max., VO = GND(3) –75 –120 — mA
VOH Output HIGH Voltage VCC = 3V, VIN = VLC or VHC, IOH = –32µAVHC VCC —
VCC = Min IOH = –300µAVHC VCC —V
VIN = VIH or VIL IOH = –15mA MIL 2.4 4.3 —
IOH = –24mA COM'L 2.4 4.3 —
VOL Output LOW Voltage VCC = 3V, VIN = VLC or VHC, IOL = 300µA — GND VLC
VCC = Min IOL = 300µA — GND VLC(4) V
VIN = VIH or VIL IOL = 32mA MIL — 0.3 0.5
IOL = 48mA COM'L — 0.3 0.5
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC - 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ±5%, Military: TA = -55°C to +125°C, VCC = 5.0V ±10%
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not ttested.
NOTE:
1 . H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
FUNCTION TABLE(1)
Inputs Outputs
OE1OE2Dx Yx Function
L L L L Transparent
LLH H
H X X Z 3-State
XHX Z
Pin Name I/O Description
OEx I When both are LOW, the outputs are enabled. When
either one or both are HIGH, the outputs are High Z.
Dx I 10-bit data input
Yx O 10-bit data output
PIN DESCRIPTION
MILITARY AND COMMERCIAL TEMPERATURE RANGES
4
IDT54/74FCT827A/B
HIGH-PERFORMANCE CMOS BUFFER
Symbol Parameter Test Conditions(1) Min. Typ.(2) Max. Unit
ICC Quiescent Power Supply Current VCC = Max. — 0.2 1.5 mA
VIN ≥ VHC; VIN ≤ VLC
∆ICC Quiescent Power Supply Current VCC = Max. — 0.5 2 mA
TTL Inputs HIGH VIN = 3.4V(3)
ICCD Dynamic Power Supply VCC = Max. VIN ≥ VHC — 0.15 0.25 mA/
Current(4) Outputs Open VIN ≤ VLC MHz
OE1 = OE2 = GND
LE = VCC
One Input Toggling
50% Duty Cycle
ICTotal Power Supply Current(6) VCC = Max. VIN ≥ VHC — 1.7 4 mA
Outputs Open VIN ≤ VLC
fi = 10MHz (FCT)
50% Duty Cycle VIN = 3.4V — 2 5
OE1 = OE2 = GND VIN = GND
LE = VCC
One Bit Toggling
VCC = Max. VIN ≥ VHC — 3.2 6.5(5)
Outputs Open VIN ≤ VLC
fi = 2.5MHz (FCT)
50% Duty Cycle VIN = 3.4V — 5.2 14.5(5)
OE1 = OE2 = GND VIN = GND
LE = VCC
Eight Bits Toggling
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of ∆ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
ICC = Quiescent Current
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current caused by an Input Transition Pair (HLH or LHL)
fCP = Clock Frequency for register devices (zero for non-register devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
POWER SUPPLY CHARACTERISTICS
VLC = 0.2V; VHC = VCC - 0.2V
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT54/74FCT827A/B
HIGH-PERFORMANCE CMOS BUFFER
5
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These parameters are guaranteed but not tested.
54/74FCT827A 54FCT827B
Com'l. Mil. Mil.
Symbol Parameter Condition(1) Min.(2) Max. Min.(2) Max. Min.(2) Max. Unit
tPLH Propagation Delay CL = 50pF 1.5 8 1.5 9 1.5 6.5 ns
tPHL Dx to Yx RL = 500Ω
CL = 300pF(3) 1.5 15 1.5 17 1.5 14
RL = 500Ω
tPZH Output Enable Time, CL = 50pF 1.5 12 1.5 13 1.5 9 ns
tPZL OE to Yx RL = 500Ω
CL = 300pF(3) 1.5 23 1.5 25 1.5 16
RL = 500Ω
tPHZ Output Disable Time, CL = 5pF(3) 1.5 9 1.5 9 1.5 7 ns
tPLZ OE to Yx RL = 500Ω
CL = 50pF 1.5 10 1.5 10 1.5 8
RL = 500Ω
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
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IDT54/74FCT827A/B
HIGH-PERFORMANCE CMOS BUFFER
Pulse
Generator
RT
D.U.T
.
VCC
VIN
CL
VOUT
50pF 500Ω
500Ω
7.0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
DATA
INPUT
TIMING
INPUT
ASYNCHRONO U S CONT ROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
tSU tH
tREM
tSU tH
HIGH-LOW-HIGH
PULSE
LOW-HIGH-LOW
PULSE
tW
1.5V
1.5V
SAME PHASE
INPU T TRANSITION
3V
1.5V
0V
1.5V
VOH
tPLH
OUTPUT
OPPOSITE PHASE
INPU T TRANSITION
3V
1.5V
0V
tPLH tPHL
tPHL
VOL
CONTROL
INPUT
3V
1.5V
0V
3.5V
0V
OUTPUT
NORMALLY
LOW
OUTPUT
NORMALLY
HIGH
SWITCH
CLOSED
SWITCH
OPEN
VOL
0.3V
0.3V
tPLZtPZL
tPZH tPHZ
3.5V
0V
1.5V
1.5V
ENABLE DISABLE
VOH
PRESET
CLEAR
CLOCK ENABLE
ETC.
Octal link
Octal l ink
Octal link
Octal l ink
Octal link
TEST CIRCUITS AND WAVEFORMS
Propagation Delay
Test Circuits for All Outputs
Enable and Disable Times
Set-Up, Hold, and Release Times
Pulse Width
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; ZO ≤ 50Ω; tF ≤ 2.5ns; tR ≤ 2.5ns.
Test Switch
Open Drain
Disable Low Closed
Enable Low
All Other Tests Open
SWITCH POSITION
DEFINITIONS:
CL = Load capacitance: includes jig and probe capacitance.
RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT54/74FCT827A/B
HIGH-PERFORMANCE CMOS BUFFER
7
ORDERING INFORMATION
CORPORATE HEADQUARTERS for SALES: for Tech Support:
2975 Stender Way 800-345-7015 or 408-727-6116 logichelp@idt.com
Santa Clara, CA 95054 fax: 408-492-8674 (408) 654-6459
www.idt.com
IDT XX
Temp . Range XXXX
Device Type XX
Package X
Process
SO Com m erci al Option s
Small Outline IC
High Performance CMOS Buffer, 10-B it
54
74 – 55°C to +125°C
0°C to +70°C
D
L
Military Options
CERDIP
Leadle s s Ch ip Ca rr ier
Blank
BCommercial
MI L-STD-883, Class B
FCT
827A
827B
