1. Product profile
1.1 General description
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices
in leadless ultra small Surface-Mounted Device (SMD) plastic packages.
The devices are designed to protect two Hi-Speed data lines or high-frequency signal
lines from the damage caused by ESD and other transients.
PRTR5V0U2F and PRTR5V0U2K integrate two ultra low capacitance rail-to-rail
ESD protection channels and one additional ESD protection diode each to ensure
signal line protection even if no supply voltage is available.
1.2 Features
nESD protection of two Hi-Speed data lines or high-frequency signal lines
nUltra low input/output to ground capacitance: C(I/O-GND) =1pF
nESD protection up to 8 kV
nIEC 61000-4-2, level 4 (ESD)
nVery low clamping voltage due to an integrated additional ESD protection diode
nVery low reverse current
nAEC-Q101 qualified
nLeadless ultra small SMD plastic packages
1.3 Applications
nUSB 2.0 interfaces
nDigital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces
nMobile and cordless phones
nPersonal Digital Assistants (PDA)
nDigital cameras
nWide Area Network (WAN) / Local Area Network (LAN) systems
nPCs, notebooks, printers and other PC peripherals
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Rev. 02 — 19 February 2009 Product data sheet
Table 1. Product overview
Type number Package Package configuration
NXP JEDEC
PRTR5V0U2F SOT886 MO-252 leadless ultra small
PRTR5V0U2K SOT891 - leadless ultra small
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 2 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
1.4 Quick reference data
[1] Measured from pin 1, 3, 4 or 6 to ground.
[2] Measured from pin 1 or 6 to pin 3 or 4.
[3] Measured from pin 5 to ground.
2. Pinning information
Table 2. Quick reference data
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per channel
C(I/O-GND) input/output to ground
capacitance f = 1 MHz;
V(I/O-GND) =0V [1] - 1.0 1.5 pF
C(I/O-I/O) input/output to input/output
capacitance f = 1 MHz;
V(I/O-I/O) =0V [2] - 0.6 - pF
Zener diode
VRWM reverse standoff voltage [3] - - 5.5 V
Csup supply pin to ground
capacitance f = 1 MHz;
VCC =0V [3] -16-pF
Table 3. Pinning
Pin Symbol Description Simplified outline Graphic symbol
PRTR5V0U2F (SOT886)
1 I/O1 input/output 1
2 GND ground
3 I/O2 input/output 2
4 I/O2 input/output 2
5V
CC supply voltage
6 I/O1 input/output 1
PRTR5V0U2K (SOT891)
1 I/O1 input/output 1
2 GND ground
3 I/O2 input/output 2
4 I/O2 input/output 2
5V
CC supply voltage
6 I/O1 input/output 1
bottom view
321
456
006aab349
6
1
43
25
bottom view
321
456
006aab349
6
1
43
25
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 3 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
3. Ordering information
4. Marking
5. Limiting values
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
Table 4. Ordering information
Type number Package
Name Description Version
PRTR5V0U2F XSON6 plastic extremely thin small outline package;
no leads; 6 terminals; body 1 ×1.45 ×0.5 mm SOT886
PRTR5V0U2K XSON6 plastic extremely thin small outline package;
no leads; 6 terminals; body 1 ×1×0.5 mm SOT891
Table 5. Marking codes
Type number Marking code
PRTR5V0U2F PF
PRTR5V0U2K PK
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
Tamb ambient temperature −40 +85 °C
Tstg storage temperature −55 +125 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per channel
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge) [1][2] -8kV
MIL-STD-883 (human
body model) [2] -10kV
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 4 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Table 8. ESD standards compliance
Standard Conditions
Per channel
IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Fig 1. ESD pulse waveform according to IEC 61000-4-2
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 5 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
6. Characteristics
[1] Measured from pin 1, 3, 4 or 6 to ground.
[2] Measured from pin 1 or 6 to pin 3 or 4.
[3] Measured from pin 1, 3, 4 or 6 to pin 5.
[4] Measured from pin 5 to ground.
Table 9. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per channel
IRreverse current VR=5V [1] - < 1 100 nA
C(I/O-GND) input/output to ground
capacitance f = 1 MHz;
V(I/O-GND) =0V [1] - 1.0 1.5 pF
C(I/O-I/O) input/output to input/output
capacitance f = 1 MHz;
V(I/O-I/O) =0V [2] - 0.6 - pF
VFforward voltage IF=1mA [3] - 0.7 - V
Zener diode
VRWM reverse standoff voltage [4] - - 5.5 V
VBR breakdown voltage [4] 6- 9V
Csup supply pin to ground
capacitance f = 1 MHz;
VCC =0V [4] -16-pF
f = 1 MHz; Tamb =25°C f = 1 MHz; Tamb =25°C
Fig 2. Input/output to ground capacitance as a
function of input/output to ground voltage;
typical values
Fig 3. Input/output to ground capacitance as a
function of input/output to input/output
voltage; typical values
V(I/O-GND) (V)
054231
006aaa483
0.8
1.2
0.4
1.6
2.0
C(I/O-GND)
(pF)
0
V(I/O-I/O) (V)
054231
006aaa484
0.4
0.6
0.2
0.8
1.0
C(I/O-I/O)
(pF)
0
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 6 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Fig 4. ESD clamping test setup and waveforms
006aab112
50 Ω
RZ
CZ
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
GND
GND
450 ΩRG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
DUT
Device
Under
Test
vertical scale = 10 V/div
horizontal scale = 50 ns/div
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 7 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
7. Application information
Handling data rates up to 480 Mbit/s, USB 2.0 interfaces require ESD protection devices
with an extremely low line capacitance in order to avoid signal distortion.
With a capacitance of only 1 pF, the PRTR5V0U2F and the PRTR5V0U2K offer
IEC 61000-4-2, level 4 compliant ESD protection.
PRTR5V0U2F and PRTR5V0U2K integrate two pairs of ultra low capacitance rail-to-rail
ESD protection channels and one additional ESD protection diode each.
The additional ESD protection diode connected between ground and VCC prevents
charging of the supply.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PRTR5V0U2F and the PRTR5V0U2K as close to the input terminal or
connector as possible.
2. The path length between the PRTR5V0U2F or the PRTR5V0U2K and the protected
line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
Fig 5. Application diagram: USB 2.0
006aaa485
D+
D−
D+
D−
GND
USB controller
common mode
choke
protected IC/device
VBUS
VBUS
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 8 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T4: 90° rotated reverse taping
Fig 6. Package outline PRTR5V0U2F (SOT886) Fig 7. Package outline PRTR5V0U2K (SOT891)
04-07-22Dimensions in mm
0.25
0.17
0.40
0.32 0.35
0.27
0.5
0.6
1.05
0.95
1.5
1.4 0.5
0.50
max 0.04
max
3
2
1
4
5
6
07-05-15Dimensions in mm
0.5
max 0.04
max
0.35
1.05
0.95
0.55
1.05
0.95
0.20
0.12
0.40
0.32 0.35
0.27
0.35
3
2
1
4
5
6
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
5000
PRTR5V0U2F SOT886 4 mm pitch, 8 mm tape and reel; T1 [2] -115
4 mm pitch, 8 mm tape and reel; T4 [3] -132
PRTR5V0U2K SOT891 4 mm pitch, 8 mm tape and reel -132
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 9 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
10. Soldering
Reflow soldering is the only recommended soldering method.
Fig 8. Reflow soldering footprint PRTR5V0U2F (SOT886)
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint PRTR5V0U2K (SOT891)
sot886_fr
solder resist
occupied area
solder paste = solderland
Dimensions in mm
0.425
(6×)
1.250
0.675
1.700
0.325
(6×)
0.270
(6×)
0.370
(6×)
0.500
0.500
sot891_fr
solder resist
occupied area
solder land plus
solder paste
Dimensions in mm
0.25
(6×)
0.15
(6×)
0.5
(6×)0.6
(6×)
0.7
0.35
1.4
1.05
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 10 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
11. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PRTR5V0U2F_PRTR5V0U2K_2 20090219 Product data sheet - PRTR5V0U2F_PRTR5V0U2K_1
Modifications: •Table 3 “Pinning”: graphic symbol amended
PRTR5V0U2F_PRTR5V0U2K_1 20081106 Product data sheet - -
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 11 of 12
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 February 2009
Document identifier: PRTR5V0U2F_PRTR5V0U2K_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
