SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101 Silicon Transistors The General Electric 2N3392, 2N3393 and 2N3394 are NPN silicon planar passi- vated transistors designed as small signal amplifiers. These devices feature tight beta control at an extremely low price. absolute maximum ratings: (25C) (uniess otherwise specified) Voltages Collector to Emitter Emitter to Base Collector to Base Current Collector (Steady State) Dissipation Total Power (free air at 25C) Total Power (free air at 55C) Temperature Storage Operating Lead Temperature, 4g + 1% from case for 10 seconds max. Vero Vso CBO Ic Pr Py Tots ] Ti 25 5 25 100 360 260 55 wo +125 +125 +260 <<< mA mW mW C C C Determined from power limitations due to saturation voltage at this current. Derate 2.67 mw/C increase in ambient temperature above 25C. DIMENSIONS WITHIN JEDEC OUTLINE TO-98 NOTE 1: Lead diameter is controlled in the zone between .070 and .250 from the seat- ing plane. Between 250 and end of lead a max. of O21 is held. ALL DIMEN. IN INCHES ANO ARE REFERENCE UNLESS TOLERANCED 3 LEADS i Ga oI 2N3392,3,4 ors 055 265 A = 9} al 1 500 SEATING Oo g| Mm Pe I 050+ .005 090 4,002 orr +808 rp (NOTE 1) ase pt electrical characteristics: (25C) (unless otherwise specified) DC CHARACTERISTICS Collector Cutoff Current (Ves = 25V, Is = 0) (Von = 25V, Ta = 100C) Emitter Cutoff Current (Vix = 5V, Ic = 0) Collector to Emitter Voltage c@ == Forward Current Transfer Ratio (Ven = 4.5V, Ic = 2 mA) SMALL SIGNAL CHARACTERISTICS Output Capacitance (Ves = 10V, In = 0, f = 1 MHz) Input Impedance Vos = 10V; Io = 2 mA; f = 1 KHz) Gain Bandwidth Product (Ip = 2 mA; Ves = 5V) Forward Current Transfer Ratio (Ic = 20 mA; Ves = 5V, f = 20 MHz) 2N3392 2N3393 2N3394 2N3393,4 2N3392 356 Min. Typ. Max. 0.1 10 0.1 25 150 300 90 180 55 110 4,5 7 10 2 7 10 15 120 15 HA HA HA volts pf pf ohms MHz Vee = 10V; |e = 1MA; f =1KHz 2N3392 2N3393 2N3394 Forward Current Transfer Ratio hre 208 150 100 Input Impedance hie 6000 3400 2750 Output Admittance he. 140 10.0 7.7 Voltage Feedback Ratio h.. 33 6.225 175 02 ou NOISE VS Ig 2N3392, 2N3393, 2N3394 Ve #5V Ty 825C {INFORMATION FROM MODEL. ke 310 TRANSISTOR NOISE ke S ANALYZER QUAN-TECH NN @ LABS, INC.) 2 3 fa = TN me me 2 2 x 0.01 ste Z a 0.001 O01 Ol t 2 4 6 6 Ig IN mA 19 9 8 7 6|-Icao VS TEMPERATURE 5 = 18 VOLTS 4 2 3 t z 2 2 z 2 o a 8 Hog 8 7 6 5 4 3 0 20 30 40 0 60 70 80 90 100 ll0 120 130 140 TEMPERATURE IN C .80 75 4 YY Veg VS Ic WV Ve * SV 2N3392 Ly 70 Ta* 25C 2N3393 LS : 2N3394 7 4 | La Ze 65 \ \\ \ 55 \ \ -50 = Jl 2 4 6 81 2 4 6 810 20 40 60 80100 Ig INMA ohms o 5 pemhos $ z 8 = x10 5 > Veetsar) IN. VOLTS Veesat) VS I 2N3392, 2N3393, 2N3394 Ig/Ig = 20 Ta= 25C t 2 4 6 81 2 4 6 810 20 40 60 80100 Ig INmA 85 .80 Vae(sat) VS I 75 2N3392, 2N3393, 2N3394 : Ig/Ig 20 Ta 25C | 70 65 i cs i Lr 55 +s +s ' 2 4 6 8 2 4 6 B10 20 40 60 80100 Ig INMA CeboOR CebolN pfF Jl 2 4 6 Cib & Cob VS VOLTAGE 2N3392, 2N3393, 2N3394 f =IMHz Ta = 25C 8 2 4 6 8 10 20 Vee OR Veg IN VOLTS 2N3392, 2N3393, 2N3394 2N3392, 3, 4 | h PARAMETERS VS Ic Vc =10V Ta = 25C f =IkHz aq 1 2 4 oO F a Ww N z 2 = % hee VS TEMPERATURE S a FE | ep 2 LS / 2N3392, 2N3393, 2N3394 as F Vg = SV 1 to a Igt2ma | 5 N 5 aa z a il rc z Le Ss TS | a Lew" ad & F 0 -l -40 -30 -20 ~-10 oO 10 20 30 640 50 60 70 680 90 100 Ol 02 .04 .06.08.1 2 4 6 8 I 2 4 6 8l0 20 40 TEMPERATURE IN C I INmMA Nee VS Tg Ve * IOV PT ttl i 2 h; 2N3392 lig, AT 2 > |h PARAMETERS VS TEMPERATURE ao" re 2 Ve =10V | LT et fe 2N3392 hf, AT IMHz 2 isk Ictima h NX - = Noe x f=lkHz Za a 4 2 = Ep * 2N3393 hte AT IMHz 8 1 > hg AT tkHz 2 2N3394 he AT IMHz 5 38 ts toe A = 2 6>n,.b74 aa e <= 2N3394 hfe AT IkKHz bra ie 4 -40 -30 -20 -t0 10 20 30 40 #50 60 70 80 930 100 TEMPERATURE IN C il 2 4 6 8 1 2 4 & 8 10 20 40 60 80 100 4 h, 2N3392 "| h, gS a 3 oS hee 2 ie 2 1 | fe a 2N3393 a |hie SF a 2N3394 z 6 z o 4 h PARAMETERS VS VOLTAGE wu 2N3392, 2N3393, 2N3394 Zz Ic elma 2 Ta = 25C Z 2 f = KHz 0 A ll 2 4 6 8 | 2 4 6 8B 10 20 40 60 80 100 \ 2 4 6 6 20 40 60 80 100 Ig IN mA Ve IN VOLTS 358