PBSS5130T,215 - NEXPERIA - Datasheet.Directory

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SOT2

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

9 July 2013 Product data sheet

Scan or click this QR code to view the latest information for this product

1. General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•Small SMD plastic package

•Low collector-emitter saturation voltage VCEsat

•High collector current capability: IC and ICM

•Higher efficiency due to less heat generation

•AEC-Q101 qualified

3. Applications

•DC-to-DC conversion

•Supply line switching

•Battery charger

•LCD backlighting

•Driver in low supply voltage applications (e.g. lamps and LEDs)

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter

voltage

open base - - -30 V

ICcollector current - - -1 A

ICM peak collector current single pulse; tp ≤ 1 ms - - -3 A

RCEsat collector-emitter

saturation resistance

IC = -500 mA; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - 220 mΩ

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 2 / 11

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 B base

2 E emitter

3 C collector

1 2

TO-236AB (SOT23)

sym132

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PBSS5130T TO-236AB plastic surface-mounted package; 3 leads SOT23

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

PBSS5130T %3E

[1] % = placeholder for manufacturing site code

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 3 / 11

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -30 V

VCEO collector-emitter voltage open base - -30 V

VEBO emitter-base voltage open collector - -5 V

ICcollector current - -1 A

ICM peak collector current - -3 A

IBM peak base current

single pulse; tp ≤ 1 ms

- -300 mA

[1] - 300 mWPtot total power dissipation Tamb ≤ 25 °C

[2] - 480 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - - 417 K/WRth(j-a) thermal resistance

from junction to

ambient

in free air

[2] - - 260 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 4 / 11

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-off

current VCB = -30 V; IE = 0 A; Tj = 150 °C - - -50 µA

IEBO emitter-base cut-off

current

VEB = -4 V; IC = 0 A; Tamb = 25 °C - - -100 nA

VCE = -2 V; IC = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

300 450 -

VCE = -2 V; IC = -500 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

260 350 -

hFE DC current gain

VCE = -2 V; IC = -1 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

210 290 -

IC = -100 mA; IB = -1 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -100 mVVCEsat collector-emitter

saturation voltage

IC = -1 A; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -225 mV

RCEsat collector-emitter

saturation resistance

IC = -500 mA; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - 220 mΩ

VBEsat base-emitter saturation

voltage

IC = -2 A; IB = -200 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -1.1 V

VBEon base-emitter turn-on

voltage

VCE = -2 V; IC = -100 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -0.75 V

fTtransition frequency VCE = -10 V; IC = -100 mA;

f = 100 MHz; Tamb = 25 °C

100 200 - MHz

Cccollector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

- - 28 pF

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 5 / 11

aaa-006394

400

600

200

800

1000

hFE

IC (mA)

-10-1 -104

-103

-1 -102

-10

(1)

(2)

(3)

VCE = -2 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 1. DC current gain as a function of collector

current; typical values

VCE (V)

0 -5-4-2 -3-1

aaa-006395

-0.4

-0.6

-0.2

-0.8

-1.0

(A)

IB (mA) = -3

-2.7

-2.4

-2.1

-1.8

-1.5

-1.2

-0.9

-0.6

-0.3

Tamb = 25 °C

Fig. 2. Collector current as a function of collector-

emitter voltage; typical values

aaa-006396

-400

-800

-1200

VBE

(mV)

IC (mA)

-10-1 -104

-103

-1 -102

-10

(1)

(2)

(3)

VCE = -2 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 3. Base-emitter voltage as a function of collector

current; typical values

aaa-006397

-400

-800

-1200

VBEsat

(mV)

IC (mA)

-10-1 -104

-103

-1 -102

-10

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 4. Base-emitter saturation voltage as a function of

collector current; typical values

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 6 / 11

aaa-006398

-102

-10

-103

VCEsat

(mV)

-1

IC (mA)

-10-1 -104

-103

-1 -102

-10

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 5. Collector-emitter saturation voltage as a

function of collector current; typical values

aaa-006406

IC (mA)

-10-1 -104

-103

-1 -102

-10

102

103

RCEsat

(Ω)

10-1

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 6. Collector-emitter saturation resistance as a

function of collector current; typical values

11. Test information

11.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

12. Package outline

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

1 2

Fig. 7. Package outline TO-236AB (SOT23)

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 7 / 11

13. Soldering

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

Fig. 8. Reflow soldering footprint for TO-236AB (SOT23)

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Fig. 9. Wave soldering footprint for TO-236AB (SOT23)

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 8 / 11

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PBSS5130T v.2 20130709 Product data sheet - PBSS5130T v.1

Modifications: •The format of this document has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Sections "General description", "Features and benefits" and "Applications": updated

•Section "Marking": updated

•Table "Limiting values": ambient temperature Tamb updated

•Table "Characteristics": base-emitter saturation voltage VBEsat added

•Figures 1 to 6: added

•Section "Test information": added

•Figure "Package outline TO-236AB (SOT23)": replaced by minimized outline drawing

•Section "Soldering": added

•Section "Legal information": updated

PBSS5130T v.1 20031212 Product data sheet - -

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 9 / 11

15. Legal information

15.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

15.2 Definitions

Preview — The document is a preview version only. The document is still

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limitation specifications and product descriptions, at any time and without

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Semiconductors product has been qualified for use in automotive

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Quick reference data — The Quick reference data is an extract of the

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Applications — Applications that are described herein for any of these

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NXP Semiconductors does not accept any liability related to any default,

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Characteristics sections of this document is not warranted. Constant or

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NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 10 / 11

No offer to sell or license — Nothing in this document may be interpreted

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grant, conveyance or implication of any license under any copyrights, patents

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15.4 Trademarks

Notice: All referenced brands, product names, service names and

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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

Product data sheet 9 July 2013 11 / 11

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................3

9 Thermal characteristics .........................................3

10 Characteristics ....................................................... 4

11 Test information ..................................................... 6

11.1 Quality information ............................................... 6

12 Package outline ..................................................... 6

13 Soldering ................................................................ 7

14 Revision history ..................................................... 8

15 Legal information ...................................................9

15.1 Data sheet status ................................................. 9

15.2 Definitions .............................................................9

15.3 Disclaimers ...........................................................9

15.4 Trademarks ........................................................ 10

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 9 July 2013