© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
1
Triple Linear Voltage Regulator for DDR-I/-II Memory
Features
• Integrated power solution for DDR-I and DDR-II
memory systems with few external components
• Three all-linear regulators for VDDQ, VTT and
VSTBY power supply applications
• Lowest system cost and smallest footprint for
DDR power solutions
• V
DDQ regulator/driver utilizes external N-FET to
provide up to 15A current at 2.5V/1.8V
• V
TT source/sink regulator provides up to 2A at
1.25V for DDR-I systems or 0.65A at 0.9V for
the DDR-II memory controller (not DDR-II
memory)
• LDO standby regulator provides up to 500mA at
2.5V for DDR-I and at 1.8V for DDR-II systems
• Can be ganged for higher current applications
• Over temperature and reverse current protection
• Over current protection for VSTBY and VTT
regulator
• Available in 8 lead and 14 lead PSOP packages
• Lead-free versions available
Applications
• Desktop PCs, notebooks, and workstations
• Set top boxes, digital TVs, printers
• Embedded systems
Product Description
The CM3131 family of all-linear regulators provides
an integrated power solution for DDR-I/-II memory
systems in both run-time and standby modes of
operation. The CM3131 is ideal for designs
incorporating both a main 3.3V and a standby (3.3V
or 5V) supply. The CM3131 features three
independent linear regulators for VDDQ, VTT and VSTBY
supply regulation and will maintain an accuracy of
±1% across the operating temperature range.
The CM3131 is offered in two configurations. The
CM3131-01/11 drives a single external N-FET on a
single VDDQ rail. The CM3131-02 drives two external
unmatched N-FETs on two VDDQ rails. Each VDDQ rail
incorporates an adjustment pin (SENSE) to enable
setting VDDQ in the 2.2V to 2.8V range, supporting
DIMMs with different supply requirements or DDR-II
type devices.
The CM3131-01/11 is available in 8-lead PSOP
package and the CM3131-02 is available in 14-lead
PSOP package.
The CM3131 devices are also available with optional
lead-free finishing.
Electrical Schematic
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
2
PACKAGE / PINOUT DIAGRAM
Note: These drawings are not to scale.
PIN DESCRIPTIONS
PART NUMBER
-01 -11 -02 NAME DESCRIPTION
1 1 13 VDDQ / VDDQ1 V
DDQ input for VREF and VDDQ Output in Standby
2 2 14 VTT V
TT Output for termination resistors
1 NC No connection
3 3 2 GND Ground
4 3 SEL Select Input, active low
4 NC No connection
4 7 EN Enable Input, active high
5 5 5 SENSE / SENSE1 Sense Input, Adjusts VDDQ Rail
6 6 6 VCC 3.3V Main Input Supply
7 7 8 VSTBY 3.3V or 5V Standby Input Supply
8 8 9 DRIVE / DRIVE1 Drive Output for VDDQ External n-FET
10 DRIVE2 Drive Output for VDDQ External n-FET
11 SENSE2 Sense Input, Adjusts VDDQ Rail
12 VDDQ 2 V
DDQ Input for VREF and VDDQ Output in Standby
Ordering Information
PART NUMBERING INFORMATION
STANDARD FINISH LEAD-FREE FINISH
PINS
PACKAGE ORDERING PART
NUMBER1
PART
MARKETING
ORDERING
PART NUMBER1
PART
MARKING
8 PSOP-8 CM3131-01SB CM3131-01SB CM3131-01SH CM3131-01SH
8 PSOP-8 CM3131-11SB CM3131-11SB CM3131-11SH CM3131-11SH
14 PSOP-14 CM3131-02SB CM3131-02SB CM3131-02SH CM3131-02SH
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
V
DDQ
V
TT
GND
SEL/EN
DRIVE
VSTB
Y
VCC
SENSE
CM3131-01/11
PSOP-8
TOP VIEW
PSOP-14
V
TT
V
DDQ1
V
DDQ2
SENSE2
DRIVE2
DRIVE1
V
STBY
CM3131-02
TOP VIEW
NC
GND
SEL
NC
SENSE1
VCC
EN
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
3
Functional Description
The CM3131-01 / -11 and CM3131-02 provide
power for DDR-I/DDR-II memories from three
voltage regulators on-chip with either one or two
external N-FETs respectively. There is an over-
temperature thermal shutdown if any of the
regulators overheat. Each regulator has reverse
current protection in the event of any being shut
down.
The linear regulator-driver/s with external N-FET/s
can provide up to 15A at 2.5V/1.8V for the VDDQ of
DDR-I/-II memory, from an input supply voltage of
2.8V-3.6V. An external feedback resistor divider,
connected to the SENSE1 pin, enables selection of
VDDQ output voltages from 2.2V to 2.8V for use with
DDR-I memories requiring other than 2.5V for VDDQ.
VDDQ = 1.25V x (R1+R2)/R2. When SENSE1 is
connected to GND or left open, VDDQ is fixed at
2.50V (and VTT at 1.25V). For DDR-II operation,
VDDQ can be set from 1.7V to 1.9V.
The VTT regulator is a linear source-sink regulator
powered from the VDDQ output that supplies the VTT
supply required by DDR-I memory termination
resistors. This regulator sinks or sources up to 2A at
1.25V to or from the DDR-I bus termination resistors.
For DDR-II applications, the regulator sinks or
sources 0.65A at 0.9V. The VTT output voltage
accurately tracks VDDQ/2 to 1%. When there is no
VCC provided, VTT is powered down and its output is
0V. This regulator has overload current limiting of
2.5A.
The standby regulator is a LDO regulator that is
powered from a standby voltage, VSTBY, of 3.3V or
5V, and supplies a regulated output of up to 500mA
to the VDDQ of the DDR memory to enable it to retain
its contents during the standby mode. It provides
2.5V for DDR-I and 1.8V for DDR-II.
The CM3131-01 and CM3131-11 differ with regards
the selection of truth table for determining which S0-
S5 sequencing matrix the chip is set for. The
CM3131-02 has both EN and SEL pins to more
accurately define each Sx stage without monitoring
the VCC or VSTBY voltages.
Two CM3131s can be ganged together to provide
VDDQ power to dual channels of DDR memory, and
the memory controller chip of any chip set.
VTT
Linear
Source-Sink
VTT Reg
VDDQ
VDDQ
VDDQ
LDO Drive
SEL / EN
CCC
CSBY
CTT
CDDQ
5VSTBY / 3.3VSTBY
GND
GND
2.8V / 3.0V / 3.3V for DDR-I,
2.2V /2.5V / 3.3V for DDR-II
DRIVE
SENSE
VDDQ
LDO
VDDQ /V
TT
Control
VDDQ
FET
VTT
VCC
Only needed for
DDR-I if VDDQ is
not 2.5V, e.g. 2.6V
or 2.7V.
Set to 1.7V to
1.9V for DDR-II
PSOP-8
Internal VSBY voltage
doubler ensures VG> 5.3V
Drives any N-FET with CGS
<1200pF
R1
R2
VTT
Linear
Source-Sink
VTT Reg
VDDQ
VDDQ1
VDDQ
LDO Drives
CCC
CSBY
CTT
CDDQ 2
5VSTBY / 3.3VSTBY
GND
DRIVE1
CDDQ1
DRIVE2
VDDQ2
SENSE1
SENSE2
VDDQ1
VDDQ2
VDDQ
LDOs
VDDQ /V
TT
Control
SEL
GND
N-FET1
N-FET2
VTT
2.8V / 3.0V / 3.3V for DDR-I,
2.2V /2.5V / 3.3V for DDR-II
EN
VCC
CM3131-02
R1
R2
R3
R4
Examples of Single and Dual N-FET Drive Configurations
CM3131-01/11
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
4
Functional Description (cont’d)
VCC VSTBY SEL VDDQ 1,2 VTT
3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
X 5V/3.3V OFF VDDQ STBY 0V
<VCC MIN X ON 0V 0V
X <VSTBY MIN OFF 0V 0V
Truth Table for CM3131-01
S to R VCC VSTBY SEL VDDQ OUT VTT OUT
S0 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S1 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S2 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S3 3V/3.3V 5V/3.3V OFF VDDQ STBY 0V
S4 <VCC MIN 5V/3.3V OFF 0V 0V
S5 <VCC MIN 5V/3.3V OFF 0V 0V
Sequencing Matrix for CM3131-01 for Suspend to RAM operation
No S to R VCC VSTBY SEL VDDQ OUT VTT OUT
S0 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S1 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S2 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S3 <VCC MIN 5V/3.3V ON 0V 0V
S4 <VCC MIN 5V/3.3V ON 0V 0V
S5 <VCC MIN 5V/3.3V ON 0V 0V
Sequencing Matrix for CM3131-01 for Suspend to RAM Not Supported
VCC VSTBY EN VDDQ OUT VTT OUT
3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
<VCC MIN 5V/3.3V ON VDDQ STBY 0V
<VCC MIN X OFF 0V 0V
X <VSTBY MIN OFF 0V 0V
Truth Table for CM3131-11
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
5
Functional Description (cont’d)
S to R VCC VSTBY EN VDDQ OUT VTT OUT
S0 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S1 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S2 3V/3.3V 5V/3.3V ON VDDQ VDDQ / 2
S3 <VCC MIN 5V/3.3V ON VDDQ STBY 0V
S4 <VCC MIN 5V/3.3V OFF 0V 0V
S5 <VCC MIN 5V/3.3V OFF 0V 0V
Sequencing Matrix for CM3131-11 for Suspend to RAM operation
VCC VSTBY SEL EN VDDQ OUT VTT OUT
3V/3.3V 5V/3.3V ON ON VDDQ VDDQ / 2
<VCC MIN 5V/3.3V OFF ON VDDQ STBY 0V
X <VSTBY MIN OFF ON 0V 0V
0V X ON ON 0V 0V
<VCC MIN X X OFF 0V 0V
Truth Table for CM3131-02
Table 3 VCC VSTBY SEL EN VDDQ OUT VTT OUT
S0 3V/3.3V 5V/3.3V ON ON VDDQ VDDQ / 2
S1 3V/3.3V 5V/3.3V ON ON VDDQ VDDQ / 2
S2 3V/3.3V 5V/3.3V ON ON VDDQ VDDQ / 2
S3 <VCC MIN 5V/3.3V OFF ON VDDQ STBY 0V
S4 <VCC MIN X ON OFF 0V 0V
S5 <VCC MIN X ON OFF 0V 0V
Sequencing Matrix for CM3131-02 for Suspend to RAM operation
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
6
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER RATING UNITS
ESD (Human Body Model) ± 2000 V
VCC, VSTBY, DRIVEx (GND – 0.6) to (+6.5) V
SEL, SENSEx (GND – 0.6) to (VCC + 0.6) V
VDDQX, VTT (GND – 0.6) to (VCC + 0.6) V
Operating Temperature Range
Ambient 0 to +70 °C
Junction 0 to +125 °C
Storage Temperature Range -40 to +150 °C
STANDARD OPERATING CONDITIONS
PARAMETER RATING UNITS
Temperature Range (Ambient) 0 to +70 °C
1. VDDQ Regulator-Driver
Supply Voltage VCC 2.8 to 3.6 V
Load Current 0 to 15 A
CCC, CDDQ 4.7, 220 µF
2. VTT Regulator
Supply Voltage VDDQ 1.8 or 2.5 V
Load Current 0 to +/- 0.9 or +/- 2.0 A
CTT 220 µF
3, VSTBY Regulator
Supply Voltage VSTBY 3.0 to 5.5 V
Load Current 0 to 500 mA
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
7
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
General Parameters
TOVER Shutdown Junction
Temperature
- 150 -
°C
VDDQ Regulator/Driver Parameters (with FDP6030L or similar MOSFET as an external transistor)
VCC MIN Input Voltage VDDQ = 2.5V, IDDQ = 6A,
each channel, SENSE = 0V
2.80 V
VDDQ Output Voltage Range IDDQ = 2.5A, VCC = 3.3V,
SENSE = 0V
2.45 2.50 2.55 V
VDRIVE H 5 DRIVE High Output
Voltage
VSTBY = 5V, VCC = 3.3V 9.50 V
VDRIVE H 3 DRIVE High Output
Voltage
VSTBY = 3.3V, VCC = 3.3V 6.1 V
CLOAD External FET Gate
Capacitance
VSTBY = 5V, VCC = 3.3V 1200 pF
tRISE DRIVE Voltage Rise
Time
VSTBY = 5V, VCC = 3.3V,
CLOAD = 1200pF
2.5 ms
VDDQ LOAD Load Regulation @
25°C
VCC = 3.3V, IDDQ = 0.1A to 6A
each channel
-1.0 - 1.0 %
VDDQ LINE Line Regulation @ 25°C IDDQ = 2.5A, VCC = 2.8V to
3.6V
-1.0 - 1.0 %
VTT Regulator Parameters
VTT Output Voltage Range VDDQ = 2.50V, ITT = 0A 1.20 1.25 1.30 V
VTT LOAD Load Regulation @ 25C ITT = 0.1A to 2A, VDDQ = 2.5V -1.0 - 1.0 %
VTT LINE Line Regulation @ 25C ITT = 0A, VCC = 2.8V to 3.6V -1.0 - 1.0 %
ITT LIM Current Limit 2.3 A
ITT SC Short Circuit Current
Limit
VTT < 1V 0.6 A
VSTBY Regulator Parameters
VDDQ STBY Output Voltage Range IDDQ =150mA, VSTBY = 5V,
SENSE =0V
2.45 2.50 2.55 V
VDDQSB LD Load Regulation @ 25C IDDQ = 10mA to 500mA,
VSTBY = 5V
-1.0 - 1.0 %
VDDQ SBLN Line Regulation @ 25C IDDQ = 150mA,
VSTBY = 3.0V to 5.5V
-1.0 - 1.0 %
VDROPOUT Dropout Voltage IDDQ = 250mA, each channel 250 450 mV
ISTBY LIM Overload Current Limit 400 mA
ISTBY SC Short Circuit Current
Limit
VDDQ < 1V 170 mA
Note 1: All parameters specified at TA = 0°C to +70°C unless otherwise noted.
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
8
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS (Cont’d)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
All Regulators
ICCN Normal Mode VCC
Supply Current
Normal mode (S0-S2)
(VDDQ1,2=VDDQ ,VTT=VDDQ/2)
5
µA
ISTBYN Normal Mode VSTBY
Supply Current
Normal mode (S0-S2)
(VDDQ1,2=VDDQ ,VTT=VDDQ/2)
1650 2450
µA
ISTBYS Standby Mode VSTBY
Supply Current
Standby mode (S3)
(VDDQ1,2=VDDQSTBY ,VTT=0)
550 850 µA
ISTBYQ Shutdown Mode
Quiescent Current
Shutdown mode (S4-S5)
(VDDQ1,2=0 ,VTT=0)
70 120
µA
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
9
Mechanical Details
8-lead PSOP Package Dimensions
© 2004 California Micro Devices Corp. All rights reserved.
02/02/04 430 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
CM3131
10
Mechanical Details (cont’d)
14-lead PSOP Package Dimensions
