SML100A9
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 6/99
VDSS
ID
IDM
VGS
VGSM
PD
TJ, TSTG
TL
IAR
EAR
EAS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current1(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
9
36
±30
±40
200
1.6
–55 to 150
300
9
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ= 25°C, L = 29.88mH, RG= 25Ω, Peak IL= 9A
VDSS 1000V
ID(cont) 9A
RDS(on) 1.100ΩΩ
• Faster Switching
• Lower Leakage
• TO–3 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
1.47 (0.058)
1.60 (0.063)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
TO–3 Package Outline.
Dimensions in mm (inches)
Pin 1 – Gate Pin 2 – Source Case – Drain
SML100A9
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 6/99
Characteristic Test Conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic Test Conditions Min. Typ. Max. Unit
9
36
1.3
700
9
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS= – ID[Cont.]
IS= – ID[Cont.] , dls / dt = 100A/µs
IS= – ID[Cont.] , dls / dt = 100A/µs
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic Min. Typ. Max. Unit
0.62
30
RθJC
RθJA
Junction to Case
Junction to Ambient °C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID= ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID= ID[Cont.] @ 25°C
RG= 1.6Ω
pF
nC
ns
3050 3660
280 390
135 200
150 225
16 24
70 105
12 24
11 22
55 85
12 24
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic Test Conditions Min. Typ. Max. Unit
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
VGS = 0V , ID= 250µA
VDS = VDSS
VDS = 0.8VDSS , TC= 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID= 1.0mA
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID= 0.5 ID[Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current 2
Drain – Source On State Resistance 2
1000
25
250
±100
24
9
1.100
V
µA
nA
V
A
Ω
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
