SML100A9 TO-3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 VDSS 1000V 9A ID(cont) RDS(on) 1.100 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 - Gate Pin 2 - Source Case - Drain D * Faster Switching * Lower Leakage * TO-3 Hermetic Package StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS Drain - Source Voltage 1000 V ID Continuous Drain Current 9 A IDM Pulsed Drain Current 1 36 A VGS Gate - Source Voltage 30 VGSM Gate - Source Voltage Transient 40 Total Power Dissipation @ Tcase = 25C 200 W Derate Linearly 1.6 W/C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063" from Case for 10 Sec. IAR Avalanche Current1 (Repetitive and Non-Repetitive) 9 EAR Repetitive Avalanche Energy 1 30 EAS Single Pulse Avalanche Energy 2 -55 to 150 300 1210 V C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25C, L = 29.88mH, RG = 25, Peak IL = 9A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 SML100A9 STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) Characteristic Drain - Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250A Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125C 250 IGSS Gate - Source Leakage Current VGS = 30V , VDS = 0V 100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain - Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 1000 Typ. 2 Max. Unit V 9 A A VGS = 10V , ID = 0.5 ID [Cont.] 1.100 DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 3050 Max. Unit 3660 VDS = 25V 280 390 Reverse Transfer Capacitance f = 1MHz 135 200 Qg Total Gate Charge3 VGS = 10V 150 225 Qgs Gate - Source Charge VDD = 0.5 VDSS 16 24 Qgd Gate - Drain ("Miller") Charge ID = ID [Cont.] @ 25C 70 105 td(on) Turn-on Delay Time VGS = 15V 12 24 tr Rise Time VDD = 0.5 VDSS 11 22 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25C 55 85 tf Fall Time RG = 1.6 12 24 pF nC ns SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) Min. Typ. Max. Unit 9 A 36 ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = - ID [Cont.] trr Reverse Recovery Time IS = - ID [Cont.] , dls / dt = 100A/s 700 ns Qrr Reverse Recovery Charge IS = - ID [Cont.] , dls / dt = 100A/s 9 C 1.3 V THERMAL CHARACTERISTICS RJC Characteristic Junction to Case RJA Junction to Ambient Min. Typ. Max. Unit 0.62 C/W 30 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99