an AMP mpany Coming Attractions Avionics Pulsed Power Transistor, 70W, TACAN Format 1025-1150 MHz PH1012-70 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching ____ 990 12? Bul | a2 632 [16 51] om i l ~ 397 out | | LUL-LU TUR | i 1.00 i 385 19781 397-1908) 133 5340) | Hermetic Metal/Ceramic Package po i bo OE | Absolute Maximum Ratings at 25C uo (5 982" 919.098) | J- Parameter Symbol Rating Units J Collector-Emitter Voltage Vees 65 v fm 830 saan el? (9.54 og des) Emitter-Base Voltage Vewo 3.0 v i de 0103! 021d 1094) Junction Temperature T, 200 C ce my - i | ; Storage Temperature Tora -65 to +200 C t Sanaa me ee id2 (3luit JIL (025) YNLLSS UTPERWIS: NUTED, 1ULERANCES ARE INCHES + Qua OM LIMP TERS Laat Electrical Characteristics at 25C Parameter Symbol Min Max | Units Test Conditions Collector-Emitter Breakdown Voltage BV oes 65 : v {,=100mA Collector-Emitter Leakage Current lees 30 mA | V,.=65V input Power P,, 44 | 14 | W | V..=48.6 V,P,,.=70 W, F=1025, 1090, 1150 MHz, Nt Power Gain G, 70 | 12 | dB | V,,=48.6V. P,,.=70 W, F=1025, 1090, 1150 MHz, N1 Collector Efficiency Ne 35 - % Vc=48.6 V, Poy, =70 W, F=1025, 1090, 1150 MHz, N14 Input Return Loss RAL 8 dB Vo248.6 V, P..,,=70 W, F=1025, 1090, 1150 MHz, N1 Load Mismatch Tolerance VSWR-T - 1.5:1 : Vo248.6 V, Po,,=70 W, F=1025, 1090, 1150 MHz, N1 Load Mismatch Stability VSWR-S - 5:1 Vo=48.6 V, Pp=70 W, F=1090 MHz, N1 Nt. TACAN pulse format consists of two, 4.0 usec pulses separated by 11.5 usec for 150 paira per second. Duty Factor=0.12% This Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. 9-4 North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 M/A-COM, Inc. . Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020