, J 1N5400G1N5408G VISHAY Vishay Lite-On Power Semiconductor 3.0A Glass Passivated Rectifier Features @ Glass passivated die construction Diffused junction High current capability and low forward voltage drop @ Surge overload rating to 125A peak Plastic material - UL Recognition flammability classification 94V-0 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage 1N5400G VRRM 50 Vv =Working peak reverse voltage 1N5401G | =VRwm 100 Vv =DC Blocking voltage 1N5402G =VR 200 V 1N5403G 300 Vv 1N5404G 400 Vv 1N5405G 500 Vv 1N5406G 600 Vv 1N5407G 800 Vv 1N5408G 1000 Vv Peak forward surge current lESM 125 A Average forward current Tpa=55C lEAy 3 A Junction and storage temperature range Tj=Tstg_ | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage IpF=3A Ve 1.1 Vv Reverse current Tp=25C IR 5 uA Tpa=125C IR 100 | pA Reverse recovery time lp=0.5A, IR=1A, tr 2 us l,p=0.25A Diode capacitance VrR=4V, f=1 MHz Cp 40 pF Thermal resistance junction to ambient RihuA 32 KAW Rev. A2, 24-Jun-98 1 (4) 1N5400G-1N5408G gd Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) _ 4 200 < _ = LL g 3 < 100 5 a \ 2 P # o S sy \ o oO LL \ oO : \ i o ao Z 1 N I I a > oO = Single phase half-wave 60 Hz resistive or inductive load 0 10 0 25 50 75 100 125 150 175 1 10 100 15566 Tamb Ambient Temperature ( C ) 15569 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 100 100 = x < = 10 = o o 10 8 8 Dv 10 o g a = $ iP @ 10 I |. Ol t 0.01 0.1 04 06 O08 10 12 14 16 18 0 20 40 60 80 100 120 140 15567 Ve Forward Voltage ( V ) 15570 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage x 200 8.3 ms Single Half-Sine-Wave yy JEDEC method 6 a 100 1) 2 a Z wo = o LL x oO oO ao Is fe 10 1 10 100 15568 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 , 1N5400G1N5408G VEISHAY Vishay Lite-On Power Semiconductor Dimensions in mm _ A poe | ay LO-201AD [im Min Max Ay 25.40 - Ce oe B 1.20 7.50 technical drawings ( 1.20 1.30 according to DIN specifications D 430) 5.30 mes AlL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 1.12 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) 1N5400G-1N5408G Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98