(R) RT8035 Dual 800mA, 1.25MHz Synchronous Step-Down Converter General Description Features The RT8035 is a high-efficiency Pulse-Width-Modulated (PWM) dual step-down DC/DC converter. Capable of delivering up to 800mA output current over a wide input voltage range from 2.5V to 5.5V, the RT8035 is ideally suited for portable electronic devices that are powered from 1-cell Li-ion battery or from other power sources such as cellular phones, PDAs, PC WLAN card and hand-held devices. z z z z z z z Applications z z z z z Portable Instruments Microprocessors and DSP Core Supplies Cellular Phones Wireless and DSL Modems PC Cards Pin Configurations (TOP VIEW) The switching ripple is easily smoothed-out by small package filtering elements due to the fixed operating frequency of 1.25MHz. The RT8035 is available in the WDFN-10L 3x3 package. EN1 FB1 VIN2 GND LX2 1 2 3 4 5 GND reduces conduction loss at PWM mode. No external Schottky diode is required in practical application. The RT8035 enters Low-Dropout mode when normal PWM cannot provide regulated output voltage by continuously turning on the upper P-MOSFET. The RT8035 enters shutdown mode and consumes less than 0.1A when the EN pin is pulled low. z 2.5V to 5.5V Input Range 800mA Output Current 1.25MHz Fixed Frequency PWM Operation 95% Efficiency No Schottky Diode Required 0.6V Reference Allows Low Output Voltage Low Dropout Operation : 100% Duty Cycle Small 10-Lead WDFN Package RoHS Compliant and Halogen Free 11 10 9 8 7 9 Three operating modes are available including : PWM mode, Low-Dropout Mode and shut-down mode. The Internal synchronous rectifier with low RDS(ON) dramatically z LX1 GND VIN1 FB2 EN2 WDFN-10L 3x3 Ordering Information RT8035 Package Type QW : WDFN-10L 3x3 (W-Type) Lead Plating System G : Green (Halogen Free and Pb Free) Z : ECO (Ecological Element with Halogen Free and Pb free) Marking Information RT8035GQW GD= : Product Code GD=YM DNN YMDNN : Date Code Note : Richtek products are : RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. Suitable for use in SnPb or Pb-free soldering processes. Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. DS8035-04 January 2012 RT8035ZQW GD : Product Code GD YM DNN YMDNN : Date Code is a registered trademark of Richtek Technology Corporation. www.richtek.com 1 RT8035 Typical Application Circuit RT8035 VIN1 CIN1 4.7F 8 VIN1 CIN2 4.7F Chip Enable L1 2.2H VOUT1 CFF1 3 VIN2 LX1 10 1 VIN2 FB1 LX2 EN1 2 5 R2 110k L2 2.2H CFF2 FB2 COUT1 10F VOUT2 6 EN2 4, 9 GND Exposed Pad (11) R1 110k 7 R3 110k R4 110k COUT2 10F Function Block Diagram EN1/EN2 VIN1/VIN2 RS1 OSC & Shutdown Control Current Limit Detector Slope Compensation Current Sense Control Logic Error Amplifier Driver LX1/LX2 PWM Comparator FB1/FB2 RC UVLO & Power Good Detector COMP RS2 GND VREF Functional Pin Description Pin No. 1 2 Pin Name EN1 FB1 Pin Function Chip Enable of Channel 1 (Active High). Feedback Input of Channel 1. 3 VIN2 Power Supply Input of Channel 2. 5 6 LX2 EN2 Switching Node of Channel 2. Chip Enable of Channel 2 (Active High). 7 8 10 FB2 VIN1 LX1 Feedback Input of Channel 2. Power Supply Input of Channel 1. Switching Node of Channel 1. GND (Exposed Pad) Ground. The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation. 4, 9, 11 Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 2 is a registered trademark of Richtek Technology Corporation. DS8035-04 January 2012 RT8035 Absolute Maximum Ratings z z z z z z z z z (Note 1) Supply Input Voltage VIN1, VIN2 ---------------------------------------------------------------------------------- -0.3V to 6.5V LX1, LX2 Pin Voltage ------------------------------------------------------------------------------------------------- -0.3V to (VIN +0.3V) Other Pins Voltage ---------------------------------------------------------------------------------------------------- -0.3V to 6.5V Power Dissipation, PD @ TA = 25C WDFN-10L 3x3 --------------------------------------------------------------------------------------------------------- 1.471W Package Thermal Resistance (Note 2) WDFN-10L 3x3, JA --------------------------------------------------------------------------------------------------- 68C/W WDFN-10L 3x3, JC --------------------------------------------------------------------------------------------------- 7.8C/W Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------------------- 260C Junction Temperature ------------------------------------------------------------------------------------------------- 150C Storage Temperature Range ---------------------------------------------------------------------------------------- -65C to 150C ESD Susceptibility (Note 3) HBM (Human Body Mode) ------------------------------------------------------------------------------------------ 2kV MM (Machine Mode) -------------------------------------------------------------------------------------------------- 200V Recommended Operating Conditions z z z (Note 4) Supply Input Voltage -------------------------------------------------------------------------------------------------- 2.5V to 5.5V Junction Temperature Range ---------------------------------------------------------------------------------------- -40C to 125C Ambient Temperature Range ---------------------------------------------------------------------------------------- -40C to 85C Electrical Characteristics (VIN = 3.6V, TA = 25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 2.5 -- 5.5 V 0.588 0.6 0.612 V -- 70 -- A -- 0.1 1 A VIN Rising -- 2.1 -- Hysteresis -- 0.18 -- 1 1.25 1.5 Input Voltage Range VIN Reference Voltage VREF Quiescent Current IQ Shutdown Current ISHDN Under Voltage Lock Out Threshold UVLO Oscillator Frequency fOSC VIN = 3.6V, I OUT = 300mA Enable High-Level Input Voltage VEN_H VIN = 2.5V to 5.5V 1.25 -- VIN Enable Low-Level Input Voltage VEN_L VIN = 2.5V to 5.5V -- -- 0.9 Thermal Shutdown Temperature TSD -- 160 -- C Peak Current Limit ILIM 1.1 1.5 -- A Switch On Resistance, High RDS(ON)_P I OUT = 200mA, VIN = 3.6V -- 0.25 -- Switch On Resistance, Low RDS(ON)_N I OUT = 200mA, VIN = 3.6V -- 0.26 -- -- 0.04 0.4 %/V -- 0.5 -- % IOUT = 0mA, VFB = VREF + 5% VIN = 2.5V to 5.5 V Output Line Regulation VIN = 2.5V to 5.5V Output Load Regulation 50mA < ILOAD < 0.8A Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. DS8035-04 January 2012 (Note 6) (Note 6) V MHz V is a registered trademark of Richtek Technology Corporation. www.richtek.com 3 RT8035 Note 1. Stresses beyond those listed "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note 2. JA is measured at TA = 25C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. JC is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Note 5. EN2 pull-up current only is activated when Regulator-1 is ready (VFB1 > 0.72V). No pull-up current (<0.1A) appear when VFB1 < 0.72V. Note 6. Guarantee by design. Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 4 is a registered trademark of Richtek Technology Corporation. DS8035-04 January 2012 RT8035 Typical Operating Characteristics Efficiency vs. Output Current Output Voltage vs. Output Current 1.230 90 1.225 80 1.220 Output Voltage (V) 100 Efficiency (%) 70 VIN = 2.5V VIN = 3.3V VIN = 5.5V 60 50 40 30 20 10 0.01 0.1 1.210 1.205 1.200 1.195 1.190 1.185 VOUT = 1.2V 0 0.001 1.215 VIN = 3.3V 1.180 1 0 0.1 0.2 0.3 Output Current (A) Reference Voltage vs. Input Voltage 0.6 0.7 0.8 0.9 1 Reference Voltage vs. Temperature 0.620 0.615 0.615 Reference Voltage (V) Reference Voltage (V) 0.5 Output Current (A) 0.620 0.610 0.605 0.600 0.595 0.590 0.610 0.605 0.600 0.595 0.590 0.585 0.585 VOUT = 1.2V, IOUT = 0.1A 0.580 2.5 3 3.5 4 4.5 5 VIN = 2.5V, VOUT = 1.2V, IOUT = 0.1A 0.580 -50 5.5 -25 0 25 50 75 100 125 Temperature (C) Input Voltage (V) Current Limit vs Temperature Frequency vs. Temperature 1.50 2.1 1.45 1.9 1.40 1.35 Current Limit (A) Frequency (MHz)1 0.4 1.30 1.25 1.20 1.15 1.10 1.7 1.5 1.3 1.1 0.9 0.7 1.05 VIN = 3.3V, VOUT = 1.2V 1.00 -50 -25 0 25 50 75 100 Temperature (C) Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. DS8035-04 January 2012 125 VIN = 3.3V, VOUT = 1.2V 0.5 -50 -25 0 25 50 75 100 125 Temperature (C) is a registered trademark of Richtek Technology Corporation. www.richtek.com 5 RT8035 Power On from VIN Power On from EN VIN = 2.5V, VOUT = 1.2V IOUT = 0.8A VIN = 2.5V, VOUT = 1.2V, IOUT = 0.8A VIN (1V/Div) VEN (1V/Div) VOUT (1V/Div) VOUT (1V/Div) IOUT (1A/Div) IOUT (1A/Div) Time (5ms/Div) Time (250s/Div) Power Off from EN Switching VIN = 2.5V, VOUT = 1.2V, IOUT = 0.8A VEN (1V/Div) VOUT (5mV/Div) VOUT (1V/Div) VLX (2V/Div) IOUT (1A/Div) IOUT (1A/Div) Time (50s/Div) Time (250ns/Div) Load Transient Response Load Transient Response VOUT (50mV/Div) VOUT (50mV/Div) IOUT (1A/Div) IOUT (1A/Div) VIN = 2.5V, VOUT = 1.2V, IOUT = 0.4A to 0.8A Time (100s/Div) Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 6 VIN = 2.5V, VOUT = 1.2V, IOUT = 0.8A VIN = 2.5V, VOUT = 1.2V, IOUT = 0.1A to 0.8A Time (100s/Div) is a registered trademark of Richtek Technology Corporation. DS8035-04 January 2012 RT8035 Applications Information The basic RT8035 application circuit is shown in Typical Application Circuit. External component selection is determined by the maximum load current and begins with the selection of the inductor value and operating frequency followed by CIN and COUT. Inductor Selection For a given input and output voltage, the inductor value and operating frequency determine the ripple current. The ripple current IL increases with higher VIN and decreases with higher inductance. V V IL = OUT x 1 - OUT f L x V IN Having a lower ripple current reduces the ESR losses in the output capacitors and the output voltage ripple. Highest efficiency operation is achieved at low frequency with small ripple current. This, however, requires a large inductor. A reasonable starting point for selecting the ripple current is IL = 0.4(IMAX). The largest ripple current occurs at the highest VIN. To guarantee that the ripple current stays below a specified maximum, the inductor value should be chosen according to the following equation : VOUT VOUT L= x 1 - f x IL(MAX) VIN(MAX) Inductor Core Selection Once the value for L is known, the type of inductor must be selected. High efficiency converters generally cannot afford the core loss found in low cost powdered iron cores, forcing the use of more expensive ferrite or mollypermalloy cores. Actual core loss is independent of core size for a fixed inductor value but it is very dependent on the inductance selected. As the inductance increases, core losses decrease. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase. Ferrite designs have very low core losses and are preferred at high switching frequencies, so design goals can concentrate on copper loss and preventing saturation. Ferrite core material saturates "hard", which means that Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. DS8035-04 January 2012 inductance collapses abruptly when the peak design current is exceeded. This results in an abrupt increase in inductor ripple current and consequent output voltage ripple. Do not allow the core to saturate! Different core materials and shapes will change the size/ current and price/current relationship of an inductor. Toroid or shielded pot cores in ferrite or permalloy materials are small and don't radiate energy but generally cost more than powdered iron core inductors with similar characteristics. The choice of which style inductor to use mainly depends on the price vs size requirements and any radiated field/EMI requirements. CIN and COUT Selection The input capacitance, C IN, is needed to filter the trapezoidal current at the source of the top MOSFET. To prevent large ripple voltage, a low ESR input capacitor sized for the maximum RMS current should be used. RMS current is given by : IRMS = IOUT(MAX) VOUT VIN VIN -1 VOUT This formula has a maximum at VIN = 2VOUT, where I RMS = I OUT/2. This simple worst-case condition is commonly used for design because even significant deviations do not offer much relief. Note that ripple current ratings from capacitor manufacturers are often based on only 2000 hours of life which makes it advisable to further derate the capacitor, or choose a capacitor rated at a higher temperature than required. Several capacitors may also be paralleled to meet size or height requirements in the design. The selection of COUT is determined by the effective series resistance (ESR) that is required to minimize voltage ripple and load step transients, as well as the amount of bulk capacitance that is necessary to ensure that the control loop is stable. Loop stability can be checked by viewing the load transient response as described in a later section. The output ripple, VOUT, is determined by : 1 VOUT IL ESR + 8fC OUT is a registered trademark of Richtek Technology Corporation. www.richtek.com 7 RT8035 The output ripple is highest at maximum input voltage since IL increases with input voltage. Multiple capacitors placed in parallel may be needed to meet the ESR and RMS current handling requirements. Dry tantalum, special polymer, aluminum electrolytic and ceramic capacitors are all available in surface mount packages. Special polymer capacitors offer very low ESR but have lower capacitance density than other types. Tantalum capacitors have the highest capacitance density but it is important to only use types that have been surge tested for use in switching power supplies. Aluminum electrolytic capacitors have significantly higher ESR but can be used in cost-sensitive applications provided that consideration is given to ripple current ratings and long term reliability. Ceramic capacitors have excellent low ESR characteristics but can have a high voltage coefficient and audible piezoelectric effects. The high Q of ceramic capacitors with trace inductance can also lead to significant ringing. For adjustable voltage mode, the output voltage is set by an external resistive divider according to the following equation : VOUT = VREF (1 + R1) R2 where VREF is the internal reference voltage (0.6V typ.) Checking Transient Response The regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, VOUT immediately shifts by an amount equal to ILOAD (ESR), where ESR is the effective series resistance of COUT. ILOAD also begins to charge or discharge COUT generating a feedback error signal used by the regulator to return VOUT to its steady-state value. During this recovery time, VOUT can be monitored for overshoot or ringing that would indicate a stability problem. Thermal Considerations Using Ceramic Input and Output Capacitors Higher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. Their high ripple current, high voltage rating and low ESR make them ideal for switching regulator applications. However, care must be taken when these capacitors are used at the input and output. When a ceramic capacitor is used at the input and the power is supplied by a wall adapter through long wires, a load step at the output can induce ringing at the input, VIN. At best, this ringing can couple to the output and be mistaken as loop instability. At worst, a sudden inrush of current through the long wires can potentially cause a voltage spike at VIN large enough to damage the part. Output Voltage Setting The resistive divider allows the FB pin to sense a fraction of the output voltage as shown in Figure 1. VOUT R1 FB RT8035 R2 GND Figure 1. Setting Output Voltage Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 8 For continuous operation, do not exceed absolute maximum operation junction temperature. The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature difference between junction to ambient. The maximum power dissipation can be calculated by following formula : PD(MAX) = (TJ(MAX) - TA) / JA Where T J(MAX) is the maximum operation junction temperature, TA is the ambient temperature and the JA is the junction to ambient thermal resistance. For recommended operating conditions specification of the RT8035, The maximum junction temperature is 125C. The junction to ambient thermal resistance JA is layout dependent. For WDFN-10L 3x3 package, the thermal resistance JA is 68C/W on the standard JEDEC 51-7 four layers thermal test board. The maximum power dissipation at TA = 25C can be calculated by following formula : PD(MAX) = (125C - 25C) / (68C/W) = 1.471W for WDFN-10L 3x3 The maximum power dissipation depends on operating ambient temperature for fixed T J(MAX) and thermal is a registered trademark of Richtek Technology Corporation. DS8035-04 January 2012 RT8035 resistance JA. For RT8035 package, the Figure 2 of derating curve allows the designer to see the effect of rising ambient temperature on the maximum power dissipation allowed. Maximum Power Dissipation (W)1 1.6 Layout Considerations Follow the PCB layout guidelines for optimal performance of RT8035. Keep the trace of the main current paths as short and wide as possible. Four Layers PCB Put the input capacitor as close as possible to the device 1.4 pins (VIN1 / VIN2 and GND). 1.2 WDFN-10L 3x3 1.0 LX 1 / LX 2 node is with high frequency voltage swing and should be kept at small area. Keep analog components away from the LX 1 / LX 2 node to prevent stray capacitive noise pick-up. Place the feedback components as close as possible to the FB1 / FB2 pins. The GND and Exposed Pad must be connected to a strong ground plane for heat sinking and noise protection. 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 Ambient Temperature (C) Figure 2. Derating Curves for RT8035 Package R1 C IN2 C OUT2 V OUT2 L1 1 10 2 9 3 GND V OUT1 R2 EN1 FB1 VIN2 GND L2 LX2 7 4 5 8 11 9 C FF1 LX1 GND VIN1 FB2 EN2 R4 V OUT1 C OUT1 C IN1 R3 V OUT2 C FF2 GND Figure 3. PCB Layout Guide Copyright (c) 2012 Richtek Technology Corporation. All rights reserved. DS8035-04 January 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 9 RT8035 Table 1. Recommended Inductors Supplier Inductance (H) Dimensions (mm) Series TAIYO YUDEN 2.2 3.00 x 3.00 x 1.50 NR 3015 GOTREND 2.2 3.85 x 3.85 x 1.80 GTSD32 Sumida 2.2 4.50 x 3.20 x 1.55 CDRH2D14 Sumida 4.7 4.50 x 3.20 x 1.55 CDRH2D14 TAIYO YUDEN 4.7 3.00 x 3.00 x 1.50 NR 3015 GOTREND 4.7 3.85 x 3.85 x 1.80 GTSD32 Table 2. Recommended Capacitors for CIN and COUT Supplier Capacitance (F) Package Part Number TDK 4.7 0603 C1608JB0J475M MURATA 4.7 0603 GRM188R60J475KE19 TAIYO YUDEN 4.7 0603 JMK107BJ475RA TAIYO YUDEN 10 0603 JMK107BJ106MA TDK 10 0805 C2012JB0J106M MURATA 10 0805 GRM219R60J106ME19 MURATA 10 0805 GRM219R60J106KE19 TAIYO YUDEN 10 0805 JMK212BJ106RD Copyright (c)2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 10 is a registered trademark of Richtek Technology Corporation. DS8035-04 January 2012 RT8035 Outline Dimension D2 D L E E2 1 e 2 SEE DETAIL A Symbol 2 1 DETAIL A Pin #1 ID and Tie Bar Mark Options b A A1 1 A3 Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated. Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A3 0.175 0.250 0.007 0.010 b 0.180 0.300 0.007 0.012 D 2.950 3.050 0.116 0.120 D2 2.300 2.650 0.091 0.104 E 2.950 3.050 0.116 0.120 E2 1.500 1.750 0.059 0.069 e L 0.500 0.350 0.020 0.450 0.014 0.018 W-Type 10L DFN 3x3 Package Richtek Technology Corporation 5F, No. 20, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries. DS8035-04 January 2012 www.richtek.com 11