TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/523
Devices Qualified Level
2N6383 2N6384 2N6385
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N6383
2N6384
2N6385
Unit
Collector-Emitter Voltage VCEO 40 60 80 Vdc
Collector-Base Voltage VCBO 40 60 80 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Base Current IB 0.25 Adc
Collector Current IC 10 Adc
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 6.0
100 W
W
Operating & Storage Temperature Top, Tstg
-55 to +175 0C
THERMAL CHARACTERISTICS
Characteristics Symbol
Max. Unit
Thermal Resistance Junction-to-Case RθJC 1.75 0C/W
1) Derate linearly 34.2 mW/0C above TA > +250C
2) Derate linearly 571 mW/0C above TC > +250C
TO-3* (TO-204AA)
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N6383
2N6384
2N6385
V(BR)CEO
40
60
80
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBB = 100 Ω 2N6383
2N6384
2N6385
V(BR)CER
40
60
80
Vdc
Collector-Base Cutoff Current
VCE = 40 Vdc 2N6383
VCE = 60 Vdc 2N6384
VCE = 80 Vdc 2N6385
ICBO
1.0
1.0
1.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6383, 2N6384, 2N6385, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
VEB = 5.0 Vdc IEBO 5.0 mAdc
Collector-Emitter Cutoff Current
VCE = 40 Vdc 2N6383
VCE = 60 Vdc 2N6384
VCE = 80 Vdc 2N6385
ICEO
1.0
1.0
1.0
mAdc
Collector-Emitter Cutoff Current
VCE = 40 Vdc, VBE = 1.5 Vdc 2N6383
VCE = 60 Vdc, VBE = 1.5 Vdc 2N6384
VCE = 80 Vdc, VBE = 1.5 Vdc 2N6385
ICEX
0.3
0.3
0.3
mAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc
IC = 10 Adc, VCE = 3.0 Vdc hFE
1,000
100
20,000
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 10 mAdc
IC = 10 Adc, IB = 0.1 Adc VCE(sat)
2.0
3.0 Vdc
Base-Emitter Voltage
IC = 5.0 Adc, VCE = 3.0 Vdc
IC = 10 Adc, VCE = 3.0 Vdc VBE(on)
2.8
4.5 Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 MHz hfe 20 300
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 200 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 5.0 Adc; IB1 = 20 mAdc ton 2.5 µs
Turn-Off Time
VCC = 30 Vdc; IC = 5.0 Adc; IB1 = -IB2 = 20 mAdc toff 10 µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 10 Vdc, IC = 10 Adc All Types
Test 2
VCE = 30 Vdc, IC = 3.33 Adc All Types
Test 3
VCE = 40 Vdc, IC = 1.5 Adc 2N6383
VCE = 60 Vdc, IC = 0.4 Adc 2N6384
VCE = 80 Vdc, IC = 0.16 Adc 2N6385
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
