APTC90TAM60TPG - Microsemi Corp. - Datasheet.Directory

APTC90TAM60TPG

APTC90TAM60TPG – Rev 0 August, 2009

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G4

G5G3G1

NTC2

NTC1

WVU

S3 0/VBUS 30/VBUS 2

S4

0/VBUS 1

S2

G2

VBUS 1

S1

VBUS 3

S5

G6

S6

VBUS 2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

VDSS Drain - Source Breakdown Voltage 900 V

Tc = 25°C 59

ID Continuous Drain Current Tc = 80°C 44

IDM Pulsed Drain current 150

A

VGS Gate - Source Voltage ±20 V

RDSon Drain - Source ON Resistance 60 mΩ

PD Maximum Power Dissipation Tc = 25°C 462 W

IAR Avalanche current (repetitive and non repetitive) 8.8 A

EAR Repetitive Avalanche Energy 2.9

EAS Single Pulse Avalanche Energy 1940 mJ

Application

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

•

- Ultra low RDSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• High level of integration

• Internal thermistor for temperature monitoring

Benefits

• Outstanding performance at high frequency operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Very low (12mm) profile

• Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

• Module can be configured as a three phase bridge

• Module can be configured as a boost followed by a

full bridge

• RoHS Compliant

Triple phase leg

Super Junction MOSFET

Power Module

VDSS = 900V

RDSon = 60mΩ max @ Tj = 25°C

ID = 59A @ Tc = 25°C

APTC90TAM60TPG

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VGS = 0V,VDS = 900V Tj = 25°C 200

IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 900V Tj = 125°C 1000 µA

RDS(on) Drain – Source on Resistance VGS = 10V, ID = 52A 50 60 mΩ

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 2.5 3 3.5 V

IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 200 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Ciss Input Capacitance 13.6

Coss Output Capacitance

VGS = 0V ; VDS = 100V

f = 1MHz 0.66 nF

Qg Total gate Charge 540

Qgs Gate – Source Charge 64

Qgd Gate – Drain Charge

VGS = 10V

VBus = 400V

ID = 52A 230

nC

Td(on) Turn-on Delay Time 70

Tr Rise Time 20

Td(off) Turn-off Delay Time 400

Tf Fall Time

Inductive Switching (125°C)

VGS = 10V

VBus = 600V

ID = 52A

RG = 3.8Ω 25

ns

Eon Turn-on Switching Energy 3

Eoff Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 10V ; VBus = 600V

ID = 52A ; RG = 3.8Ω 1.5 mJ

Eon Turn-on Switching Energy 4.2

Eoff Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 10V ; VBus = 600V

ID = 52A ; RG = 3.8Ω 1.7 mJ

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C 59

IS Continuous Source current

(Body diode)

Tc = 80°C 44

A

VSD Diode Forward Voltage VGS = 0V, IS = - 52A 0.8 1.2 V

trr Reverse Recovery Time Tj = 25°C 920 ns

Qrr Reverse Recovery Charge

IS = - 52A

VR = 400V

diS/dt = 200A/µs Tj = 25°C 60 µC

APTC90TAM60TPG

APTC90TAM60TPG – Rev 0 August, 2009

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

RthJC Junction to Case Thermal Resistance 0.27 °C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M6 3 5 N.m

Wt Package Weight 250 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R25 Resistance @ 25°C 50 kΩ

∆R25/R25 5 %

B25/85 T

25 = 298.15 K 3952 K

∆B/B TC=100°C 4

%

⎥

⎦

⎤

⎢

⎣

⎡

⎟

⎠

⎞

⎜

⎝

⎛−

=

TT

B

R

RT11

exp

25

85/25

25

SP6-P Package outline (dimensions in mm)

9 places (3:1)

ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :

See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com

T: Thermistor temperature

RT: Thermistor value at T

APTC90TAM60TPG

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Typical Performance Curve

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.00001 0.0001 0.001 0.01 0.1 1 10

rectang u lar Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effecti ve Tra nsient Thermal Imped ance, Ju n c tion to C ase vs Pulse Duration

5V

6V

0

80

160

240

0 5 10 15 20

V

DS

, Drain to Source Voltage (V)

I

D

, Drain Current (A)

Low V oltage Output Ch aracteristics

V

GS

=20, 8V

0

10

20

30

40

50

60

25 50 75 100 125 150

T

C

, Case Tem p erature (° C )

I

D

, DC Drain Current (A)

DC Drain Current vs Case Temperature

900

925

950

975

1000

25 50 75 100 125

T

J

, Junction Temperature (°C)

Breakdown Vo ltage vs Temperature

BV

DSS

, Drain to Source Breakdown

Voltage

Maximum Safe Operating Area

10 ms

100 µs

1

10

100

1000

1 10 100 1000

V

DS

, Drain to Source Voltage (V)

I

D

, Drain Cu r r e nt (A)

limited b

y

R

DS

on

Single pulse

T

J

=150°C

T

C

=25°C

Ciss

Crss

Coss

1

10

100

1000

10000

100000

0 25 50 75 100 125 150 175 200

V

DS

, Drain to Source Voltage (V)

C, Capacitance (pF)

Capacit an ce vs Drain to Sou r ce Voltag e

0

2

4

6

8

10

0 100 200 300 400 500 600

Gate Charge (nC)

V

GS

, Gate to Source Voltage (V)

Gate Char g e vs Gate to Source Voltage

V

DS

=400V

I

D

=52A

T

J

=25°C

APTC90TAM60TPG

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Hard

switching ZCS

ZVS

0

100

200

300

400

20 25 30 35 40 45 50

ID, Drain Current (A)

Frequency (kHz)

Operating Frequency vs Drain Current

V

DS

=600V

D=50%

R

G

=3.8Ω

T

J

=125°C

T

C

=75°C

Switch i n g Energy vs Current

Eon

Eoff

0

2

4

6

8

10 20 30 40 50 60 70 80

ID, Drain Current (A)

Eon and Eoff (mJ)

V

DS

=600V

R

G

=3.8Ω

T

J

=125°C

L=100µH

ON resistance vs Temperature

0.5

1.0

1.5

2.0

2.5

3.0

25 50 75 100 125 150

TJ, Junction Temperature (°C)

RDS(on), Drai n to Sou rce ON resistan ce

(Normalized)

Switching En ergy vs Gate Resistance

Eon

Eoff

0

1

2

3

4

5

6

7

0 5 10 15 20

Gate Resistance (Ohms)

Switching Energy (mJ)

V

DS

=600V

I

D

=52A

T

J

=125°C

L=100µH

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

Microsemi reserves the right to change, without notice, the specifications and information contained herein

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