SDR805RS - Solid State Devices, Inc.

Solid State Devices, Inc.

14701 Firestone Blvd * La Mira da, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

Part Number/Ordering Information 1/

SDR __ __

└

Screening 2/ __ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

Pin Configuration __ = Normal (Cathode to Stud)

(See Table 1) R = Reverse (Anode to Stud)

Family/Voltage

│

└

803 = 50V

804 = 100V

805 = 150V

806 = 200V

807 = 250V

808 = 300V

809 = 350V

810 = 400V

811 = 500V

812 = 600V

813 = 700V

814 = 800V

815 = 900V

816 = 1000V

817 = 1100V

SDR803

Thru

SDR817

100A, 60nsec, 50-1100 V

Ultra Fast Recovery Rectifier

Features:

• Fast Recovery: 60nsec Maximum

• Low Forward Voltage Drop

• Low Reverse Leakage Current

• Single Chip Construction

• PIV to 1100 Volts

• Hermetically Sealed

• For High Efficiency Applications

• TX, TXV, and S-Level Screening Available 2/

Maximum Ratings 4/ Symbol Value Units

Peak Repetitive Reverse Voltage and

DC Blocking Voltage @ 100µA

SDR803

SDR804

SDR805

SDR806

SDR807

SDR808

SDR809

SDR810

SDR811

SDR812

SDR813

SDR814

SDR815

SDR816

SDR817

VRRM

VRWM

100

150

200

250

300

350

400

500

600

700

800

900

1000

1100

Volts

Average Rectified Forward Current

(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Io 100 Amps

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)

SDR803 – 806

SDR807 – 809

SDR810 – 814

SDR815 – 817

IFSM

1000

800

700

600

Amps

Operating & Storage Temperature TOP & TSTG -55 to +175 ºC

Thermal Resistance (Junction to Case)

RθJC 0.85 ºC/W

Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Recovery Conditions: IF = 500 mA, IR = 1 Amp, IRR = 250 mA.

4/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0059G DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mira da, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SDR803

Thru

SDR817

Electrical Characteristics 4/ Symbol Value Units

Maximum Instantaneous Forward Voltage Drop

(IF =100Adc, TA = 25 ºC, 300-500μs Pulse)

SDR803 – 806

SDR807 – 810

SDR811 – 814

SDR815 – 817

VF1

1.00

1.50

1.85

1.90

VDC

Maximum Instantaneous Forward Voltage Drop

(IF =100Adc, TA = -55 ºC, 300-500μs Pulse)

SDR803 – 806

SDR807 – 810

SDR811 – 814

SDR815 – 817

VF2

1.10

1.60

1.95

2.00

VDC

Maximum Reverse Leakage Current

(Rated VR, 300μs minimum pulse) TA = 25 ºC

TA = 100 ºC IR1

IR2

100

10 μA

Maximum Reverse Recovery Time

(IF = 500 mA, IR = 1 Amp, IRR = 250 mA) TA = 25 ºC tRR 60 nsec

Maximum Junction Capacitance

(VR = 10VDC, TA = 25ºC, f = 1MHz) CJ 700 pF

Notes:

1/ For ordering information, Price, Operating Curves, and

Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Recovery Conditions: IF = 500 mA, IR = 1 Amp, IRR = 250 mA.

4/ Unless Otherwise Specified, All Maximum Ratings/Electrical

Characteristics @25°C.

Table 1- PIN ASSIGNMENT

Code

Configuration Terminal Stud

__ Normal Anode Cathode

R Reverse Cathode Anode

DO-5 Outline (Normal Pin Configuration Shown):

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0059G DOC