ADV MICRO PLA/PLE/ARRAYS 4b Uz57526 ADV MICRO PLA/PLE/ARRAYS Combinatorial PAL10OH8 Series Features/ Benefits | e Combinatorial architectures e Active high or active tow options Security fuse 96D 27114 oC Ordering Information PAL10H8 C N STD PROGRAMMABLE I L PROCESSING ARRAY LOGIC STD = Standard -- XXXX = Other ~ NUMBER OF ARRAY INPUTS PACKAGE N= Plastic DIP OUTPUT TYPE vu = Ceramic DIP = Active High . NL = Plastic Leaded Combinatorial Chip Carrier L = Active Low - SG = Small-Outline Combinatorial Gull-wing = Complementa Combinatertat? OPERATING CONDITIONS C= Commercial NUMBER OF OUTPUTS ; INPUTS OUTPUTS POLARITY fo (ch) PAL10H8 10 8 HIGH 35 90 PAL12H6 12 6 HIGH 35 90 PAL14H4 14 4 HIGH 35 90 PAL16H2 16 2 HIGH 35 80 PAL16C1 16 2 BOTH 40 . 90 PAL10L8 : 10 8 LOW 35 90 PAL12L6 12 6 LOW 35 90 PAL14L4 14 4 LOW 85 90 PAL16L2 16 2 LOW 35 90 Description Performance The PAL1OH6 Series is made up of nine combinatorial 20-pin PAL devices. They implement simple combinatorial logic, with no feedback. Each has sixteen product terms total, divided among the outputs, with two to sixteen product terms per output. Polarity Both active high and active low versions are available for each architecture, The 16C1 offers both polarities of its single output. . ae stent 102858 JANUARY 1988 Thestandard series has a propagation delay (tpd) of 35 nanose- conds (ns), except for the 16C1 at 40 ns, Standard supply current is 90 milliamps (mA). Packages The commercial PAL10H8 Series Is available in the plastic DIP (Nj, ceramic DIP (J), plastic leaded chip carrier (NL), and small outline (SG) packages. " cl Mondlithic Rx Mamorles az T-H6-13-47 _.. 40H8, 12H6, 14H4, 16H2 16C1 | 40L8, 12L6, 14L4, 16L2 dey 025752 ooe7hhDS DEff o2s752b aoa? --J-46-13-47 12H6 1444 -57 0257526 ADV MICRO P DIP/SO Pinouts in nN. oa Qn Tr : 1 eG | > a: a we egy eo < on wen . Og |. 23 OF N ga < ae Zz JA dor oO. tC. =o & oOo Ga-a ae ie Ugo Ww Hes = eget = . > Ez < aA 6 al tipo OF nN ll o ae o = 10H8 FAA AAPA | 1 QQaR BAHRORAD |) HEHE THLE - APPR FREE PTAA prrgeon CO er Oe FAAP Eee EAE ARARAARA|] at LAAARAG LIE = ot L] wl I~] lo : {=} aE bel fod dol biol fof Ie} fol jo te} TL Toh Pel fod fol f- lol io el Monolithic Rd Memoarles L'SOQ eOke__ a ADV MICRO PLA/PLE/ARRAYS tb ve O257?S5eb aoe? hil Combinatorial PAL1 OHS Series OHS, 12H6, 14H4, 16H2, 16C1, 10L8, 12L6, 14L4, 16L2 0257526. ADV MICRO PLA/PLE/ ARRAYS 96D 271 16 D _ PLCC Pinouts _ T- 46-13-47 10H8 1444 31,2117] [eotlis | voc f= Thy io co 5} INPUT | active Hi7] ACTIVE Ht7] 17] anp | ACT NIGH ACTIVE 6 OR ort] 16] OR HIGH L{t6] Logic |CUTPUT/ faa . OUTPUT! i= OUTPUT 7A array | CELLS iis] - 15] 15] Fa 7 7 GND 9 |lollahallia a 10L8 12L6 . [3121 Teollie 31f21fs T2ollte voc voc 4 178 4 18 5) INPUT | active Hiv] Bp) INPUT | active Hi7] H AND | ACTIV AND cnv ACTIVE 6 OR 116] 6 OR ie] LOW Loge |OUTPUT Logic |OUTPUT OUTPUT ZF] array | CELLS fig] 7) array | CELLS Lig] 8 Ha] 8 14] GND GND 9Tollialialia 9 [olla a}lia 16H2 . 16L2 16C1 31 f2] fi] feo] fi} 3] [2] [7] Pol fia 31 [2] i] Pol fis vec vec | vec | 1 4 ia] 4 me ary He ae st mer lh st] mer ly : on | ACTIVE c ACTIVE COMPLE- HIGH H16] 6 R L fig] 6 OR -{t5] 7L LOGIC | output LOGIC | out pyr Logic | orp array | UTA +15] ZF) array |QUTPUTL Fg] ZF} anray | OUTPUT LTr3] : GND fl : GND pl : GND 4 9 [tof [aaf 12113 9 T]101 [11] 112) 113 9 [iol 14] 2a) Package Drawings (refer to PAL Device Package Outlines, page 3-179) / 5-58 at Monolithic RE Memories clCombinaterial PAL10H8 Series - T- 46-13-47. 10H8, 12H6, 14H4, 16H2, 16C1, 10L8, 1246, 14L4, 16L2 . 0257526 ADV MICRO PLA/PLE/ARRAYS 96D 27117 dp (C= Absolute Maximum Ratings Operating Programming Supply voltage VOC wee ese eeecueeeees becceeseeeue Deeveseeneee pee eeereeeeveoes -O5BVtO7OV .......0ee -0.5 Vito 12.0V INPULVOIAGE oo sees eee reece c eect eee eaeseseneeetneneeanes ecncecesceceses TEE VUOS5SV ccccceeeee -1.0V to 22.0V Off-state output voltage ...... peetteueeeee teeeae cece ee eeteeeseweceees Vedeneae wleavecces DOV caaee pe venensenene 12.0 V Storage temperature .....ccccceseceecneveeneases dabveaneees beer b bere eesaeeue bebe e ener ecenevabeatece -65C to +150C Operating Conditions . SYMBOL : PARAMETER MIN TYP MAX | UNIT Voc Supply voltage : 475 5 5257) V Ta Operating free-air temperature , 0 25 751 C Electrical Characteristics over Operating Conditions SYMBOL PARAMETER . TEST CONDITIONS MIN TYP MAX | UNIT Vit Low-level input voltage oo os! V Vin! High-level input voltage : 2 . V Vic input clamp voltage Voc = MIN i) = -18mA -0.8 -15/] V het Low-level input current Voc = MAX Vv, =04V -0.02 -0.25 | mA he High-level input current Voc = MAX Vp 224 25 | pA I Maximum input current Voc = MAX Vp =5.5V 100} vA |. . VoL Low-level output voitage Veo = MIN lo, = 8mA 03 O08] V VOH High-level output voltage Voc = MIN IoH = 73.2 mA 24 28 V - los? Output short-circuit current] Vog=5V Vo =0V -30 -70 -130 | mA loc Supply current Voc = MAX 55 90] mA Switching Characteristics over Operating Conditions SYMBOL PARAMETER TEST MIN TYP MAX | UNIT 5 | CONDITIONS Except 16C1 AR. = 5600 25 35 tpp Input.or feedback to output 7601 - Ro 44 ko = 10 ns 1. These are absolute values with respect to the ground pin on the device and include all overshoots due to system and/or tester noise. Do not attempt to test these values without sultable equipment, 2. Nomore than one output should be shorted at a time, and duration of the short circuit should not exceed one second. a nee a | zl Monolithic RR Memeorles cl 5-59ADV MICRO PLA/PLE/ARRAYS 4b DER O25752b ao27118 ~~ Gombinatorial PAL10H8 Series - 10H6, 12H6, 1414, 16H2, 16C1, 10L8, 12L6, 1414, 16L2 0257526 ADV MICRO PLA/PLE/ARRAYS 98D 27118 > Switching Waveforms INPUT OR FEEDBACK Vy . ; x COMBINATORIAL v OUTPUT T Combinatorial Output Switching Test Load (refer to page 5- 164) Programmers/Development Systems .{refar to Programmer Reference Guide, page 3-81) Schematic of Inputs and Outputs (refer to page 5-164) T- 46-13-47 Notes: LVT mt 5YV. 2. Input pulse amplitude OVtoS.0V. . 3. Input rise and fall times 2-5 ns typical. 5-60 ol Monolithic RED Memories olADV MICRO. PLA/PLE/ARRAYS 1b ef 0257526 nbe?a14 Combinatorial PAL10OH8 Series TOHS, 12HG, 14H4, 16H2, 16C1, 10L6, 12L6, 14L4, 16L2 0257526 ADV MICRO PLA/PLE/ARRAYS 96D 27119 =D Logic Diagram 10H8 . T- 46-13-47 WF m2 zl Monolithic RR Memories zt 5-61Combinatorial PAL{OH8 Series _ 10H8, 12H6, 14H4, 16H2, 16C1, 10L8, 12L6, 14L4, 16L2 0257526 ADV MICRO PLA/PLE/ARRAYS 96D 27120 oD = Logic Diagram 12H6 T- 46-13-47 e1z3 4667 O88 W212 1617 2021 24252627) 20283031 5-62 . Pm Monolithic RD Memories clADV MICRO PLA/PLE/ ARRAYS 4b ve 0257526 Oder) Combinatorial PAL10H8 Series 10H8, 12H6, 14H4, 16H2, 16C1, 10L8, 12L6, 14L4, 16L2 * 0257526 ADV MICRO PLA/PLE/ARRAYS 96D 27121 DB Logic Diagram 14H4 T- 46-13-47 Seiti 1293 1617 7aze9e3t 1 123 45687 8818 1213 Wi? 20202221 24252627) 70289031 _ Ce cl Monolithic RR Memories zl 5-63Rg ADV MICRO PLA/PLE/ARRAYS 4b ve OeS7Seb OOe?hec | Combinatorial PAL10H8 Series 40H8, 12H6, 14H4, 16H2, 16C1, 10L8, 12L6, 1414, 16L2 0257526 ADV MICRO PLA/PLE/ARRAYS 96D 27122 Dp Logic Diagram 16H2 i T46-13-47 , 46567 ein fata is i7ikih 2 923 4567 #9901 415 16 49 2028222] 24252627) 28283031 ere _ a 5-64 7 | \ Monolithic RR Memorles zlADV MICRO PLA/PLE/ARRAYS 4b DEB o2s7s26 | ao27123 Combinatorial PAL10HS8 Series . 10H8, 12H6, 14H4, 16H2, 16C1, 10L8, 1216, 14L4, 16L2 0257526 ADV MICRO PLA/PLE/ ARRAYS a 96D 27123 D Logic Diagram 16C1 T-46-13-47 Te WR MS W O12 Use Baws cl Monolithic RR Memorles at 5.65ADV MICRO PLA/PLE/ARRAYS Fb a | Oes?seb go271i Combinatorial PAL10HS8 Series 10H8, 12H6, 14H4, 16H2, 16C1, 1016, 12L6, 14L4, 16L2 3767526 ADV MICRO PLA/PLE/ARRAYS 96D 27124 D = Logic Diagram 40L8 1-461 . - Hn 5-66 at Mondlithie RR Memortles olADV MICRO PLA/PLE/ARRAYS 4b pel 0257526 on2712s Combinatorial PAL10H8 Series 10H8, 12H6, 14H4, 16H2, 16C1, 10L8, 12L6, 14L4, 16L2 * 9257526 ADV MICRO PLA/PLE/ARRAYS 96D 27125 0D Logic Diagram a 12L6 - T-46-13-47 1 6123 8567 87 na 1917 zeal TA252627 28799031 z\ Monolithic RD Memories al 5-67Combinatorial PAL10H8 Series . _ 40H8, 12H6, 14H4, 16H2, 46C1, 10L8, 12L6, 14L4, 16L2 0257526 ADV. MICRO PLA/PLE/ARRAYS | 96D 27126 DB Logic Diagram 14L4 wy 1213 ~ {607 20112222) 28252627) 20283051 T- 46-13-47 _ x 19 4 26 - 16 x t fed x4 1t 23 557 gtan | i213 wa 26212222 24252627) 20283031 5-68 ; cl Monolithic RR Memories aADV MICRO PLA/PLE/ARRAYS tb Def) o2s752 ooerLe? Combinatorial PAL10H8 Series a _ 10H8, 12H6, 14H4,16H2, 16C1, 10L8, 12L6, 14L4,16L2 _ 9257526 ADV MICRO PLA/PLE/ ARRAYS / 96D 271279 D Logic Diagram Lode EP 16L2 | T.46-13-47 i Ot23 458 7 SRW 1S PS EFENAS 20202223 24252627 282 cl Monolithic Rd Memories \ 5-69