1 TC1412 TC1412N 2A HIGH-SPEED MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1412/1412N can easily switch 1000 pF gate capacitance in 18 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy. Latch-Up Protected: Will Withstand 500mA Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .....................................................4kV High Peak Output Current .................................. 2A Wide Operating Range .......................... 4.5V to 16V High Capacitive Load Drive Capability .......................... 1000pF in 18nsec Short Delay Time .................................. 35nsec Typ Consistent Delay Times With Changes in Supply Voltage Matched Delay Times Low Supply Current -- With Logic "1" Input ................................. 500A -- With Logic "0" Input ................................. 150A Low Output Impedance ....................................... 4 Pinout Same as TC1410/11/13 3 4 ORDERING INFORMATION PIN CONFIGURATIONS VDD 1 8 VDD IN 2 TC1411 NC 3 GND 4 2 Part No. VDD 1 7 OUT IN 2 6 OUT NC 3 5 GND GND 4 6, 7 8 VDD 7 OUT TC1411N 5 GND 2 INVERTING 6 OUT 6, 7 NONINVERTING NC = NO INTERNAL CONNECTION Package Temp. Range TC1412COA TC1412CPA TC1412EOA TC1412EPA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C TC1412NCOA TC1412NCPA TC1412NEOA TC1412NEPA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C NOTE: SOIC pinout is identical to DIP. 5 6 FUNCTIONAL BLOCK DIAGRAM TC1411 VDD INVERTING OUTPUTS 7 300mV OUTPUT NONINVERTING OUTPUTS INPUT 4.7V TC1411N 8 GND EFFECTIVE INPUT C = 10pF TC1412/N-7 10/11/96 TELCOM SEMICONDUCTOR, INC. 4-195 2A HIGH-SPEED MOSFET DRIVERS TC1412 TC1412N ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND - 5.0V) Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C Package Thermal Resistance CerDIP RJ-A ................................................ 150C/W CerDIP RJ-C .................................................. 50C/W PDIP RJ-A ................................................... 125C/W PDIP RJ-C ..................................................... 42C/W SOIC RJ-A ................................................... 155C/W SOIC RJ-C ..................................................... 45C/W Operating Temperature Range C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C Power Dissipation (TA 70C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V VDD 16V, unless otherwise specified. Typical values are measured at TA = 25C; VDD = 16V. Symbol Parameter Test Conditions Min Typ Max Unit 2.0 -- -1 - 10 -- -- -- -- -- 0.8 1 10 V V A DC Test VDD - 0.025 DC Test -- VDD = 16V, IO = 10mA TA = 25C -- -- 0C TA 70C - 40C TA 85C -- VDD = 16V -- Duty Cycle 2% 0.5 VDD = 16V t 300 sec -- -- 4 5 5 2.0 -- -- 0.025 6 7 7 -- -- V V Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current -5V VIN VDD TA = 25C - 40C TA 85C Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance IPK IREV Peak Output Current Latch-Up Protection Withstand Reverse Current A A Switching Time (Note 1) tR Rise Time Figure 1 tF Fall Time Figure 1 tD1 Delay Time Figure 1 tD2 Delay Time Figure 1 Power Supply Current VIN = 3V VIN = 0V TA = 25C 0C TA 70C - 40C TA 85C TA = 25C 0C TA 70C - 40C TA 85C TA = 25C 0C TA 70C - 40C TA 85C TA = 25C 0C TA 70C - 40C TA 85C -- -- -- -- -- -- -- -- -- -- -- -- 18 20 22 18 20 22 35 40 40 35 40 40 26 31 31 26 31 31 45 50 50 45 50 50 VDD = 16V -- -- 0.5 0.1 1.0 0.15 nsec nsec nsec nsec Power Supply IS mA NOTE: 1. Switching times are guaranteed by design. 4-196 TELCOM SEMICONDUCTOR, INC. 2A HIGH-SPEED MOSFET DRIVERS 1 TC1412 TC1412N +5V 2 90% INPUT 0V VDD= 16V 4.7F 10% tD1 VDD 0.1F tD2 tF tR 90% 90% OUTPUT 3 1,8 INPUT 10% 10% 0V 6,7 2 OUTPUT Inverting Driver TC1412 CL = 1000pF TC1412 TC1412N +5V 90% 4 INPUT 4,5 10% 0V VDD INPUT: 100 kHz, square wave, tRISE = tFALL 10nsec tD1 90% tD2 90% tR OUTPUT 10% 0V tF 10% 5 Noninverting Driver TC1412N Figure 1. Switching Time Test Circuit Thermal Derating Curves 6 1600 MAX. POWER (mV) 1400 8 Pin DIP 1200 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 7 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (C) 8 TELCOM SEMICONDUCTOR, INC. 4-197 2A HIGH-SPEED MOSFET DRIVERS TC1412 TC1412N TYPICAL CHARACTERISTICS Quiescent Supply Current vs. Supply Voltage Quiescent Supply Current vs. Temperature TA = 25C VSUPPLY = 16V 500 500 400 400 VIN = 3V ISUPPLY (A) ISUPPLY (A) VIN = 3V 300 200 100 300 200 100 VIN = 0V VIN = 0V 0 0 4 6 8 10 12 14 -40 16 -20 0 VDD (VOLTS) Input Threshold vs. Supply Voltage TA = 25C 60 80 60 80 VSUPPLY = 16V 1.6 VTHRESHOLD (VOLTS) VTHRESHOLD (VOLTS) 40 Input Threshold vs. Temperature 1.6 1.5 VIH 1.4 1.3 VIL 1.2 1.1 1.5 VIH 1.4 1.3 6 8 10 12 14 VIL 1.2 1.1 4 16 -40 -20 0 VDD (VOLTS) 11 11 9 9 A 5 =8 Rds (ON) W 13 T 5C TA = 25C TA = -4 0C 3 40 Low-State Output Resistance High-State Output Resistance 7 20 TEMPERATURE (C) 13 Rds (ON) W 20 TEMPERATURE (C) 7 T A =8 5C 5 TA = 2 5C 3 TA = -40C 1 1 4 6 8 10 VDD (VOLTS) 4-198 12 14 16 4 6 8 10 12 14 16 VDD (VOLTS) TELCOM SEMICONDUCTOR, INC. 2A HIGH-SPEED MOSFET DRIVERS 1 TC1412 TC1412N Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage CLOAD = 1800pF CLOAD = 1800pF 70 70 60 60 50 50 40 TFALL (nsec) TRISE (nsec) TYPICAL CHARACTERISTICS (Cont.) TA = 85C 30 TA = 25C 20 3 40 TA = 85C 30 TA = 25C 20 TA = -40C 10 4 6 TA = -40C 8 10 12 14 10 16 4 6 8 VDD (VOLTS) 90 90 80 80 70 TA = 85C TA = 25C 40 TA = -40C 30 20 4 6 TA = 25C 50 40 TA = -40C 30 8 10 12 14 20 16 4 6 TFALL 40 30 20 10 3000 CLOAD (pF) TELCOM SEMICONDUCTOR, INC. 12 14 16 6 Propagation Delays vs. Capacitive Load 4000 5000 PROPAGATION DELAYS (nsec) TRISE 2000 10 TA = 25C, VDD = 16V 60 50 8 VDD (VOLTS) TA = 25C, VDD = 16V 1000 4 5 TA = 85C 60 Rise and Fall Times vs. Capacitive Load 0 16 70 VDD (VOLTS) 0 14 CLOAD = 1800pF 100 TD2 (nsec) TD1 (nsec) CLOAD = 1800pF 50 12 TD2 Propagation Delay vs. Supply Voltage 100 60 10 VDD (VOLTS) TD1 Propagation Delay vs. Supply Voltage TRISE, TFALL (nsec) 2 39 38 TD2 7 37 36 TD1 35 34 33 32 0 1000 2000 3000 4000 5000 CLOAD (pF) 4-199 8