PZT2222A, SPZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features PNP Complement is PZT2907AT1 The SOT-223 Package Can be Soldered Using Wave or Reflow SOT-223 Package Ensures Level Mounting, Resulting in Improved http://onsemi.com SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT Thermal Conduction, and Allows Visual Inspection of Soldered Joints The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die Available in 12 mm Tape and Reel AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-223 (TO-261) CASE 318E-04 STYLE 1 COLLECTOR 2, 4 BASE 1 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage (Open Collector) VEBO 6.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation up to TA = 25C (Note 1) PD Storage Temperature Range Tstg - 65 to +150 C Junction Temperature TJ 150 C W 1.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2. THERMAL CHARACTERISTICS Rating Symbol Value Unit RqJA 83.3 C/W TL 260 10 C Sec Thermal Resistance, Junction-to-Ambient Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath MARKING DIAGRAM AYM P1FG G A = Assembly Location Y = Year M = Month Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping PZT2222AT1G SOT-223 (Pb-Free) 1,000 Tape & Reel SPZT2222AT1G SOT-223 (Pb-Free) 1,000 Tape & Reel PZT2222AT3G SOT-223 (Pb-Free) 4,000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 7 1 Publication Order Number: PZT2222AT1/D PZT2222A, SPZT2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 - Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 - Vdc Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = - 3.0 Vdc) IBEX - 20 nAdc Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = - 3.0 Vdc) ICEX - 10 nAdc Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO - 100 nAdc Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125C) ICBO - - 10 10 nAdc mAdc 35 50 70 35 100 50 40 - - - - 300 - - - - 0.3 1.0 0.6 - 1.2 2.0 2.0 0.25 8.0 1.25 - - 8.0x10-4 4.0x10-4 50 75 300 375 5.0 25 35 200 - 4.0 300 - OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = - 55C) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe F Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) - Vdc Vdc kW - - mmhos dB DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc - 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce - 25 pF (VCC = 30 Vdc, IC = 150 mAdc, IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc) Figure 1 td - 10 ns tr - 25 (VCC = 30 Vdc, IC = 150 mAdc, IB(on) = IB(off) = 15 mAdc) Figure 2 ts - 225 tf - 60 SWITCHING TIMES (TA = 25C) Delay Time Rise Time Storage Time Fall Time http://onsemi.com 2 ns PZT2222A, SPZT2222A VCC Vi R2 90% Vo R1 10% 0 tr Vi D.U.T. tp Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time Vi = - 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 W, R2 = 200 W. PULSE GENERATOR: PULSE DURATION RISE TIME DUTY FACTOR OSCILLOSCOPE: INPUT IMPEDANCE INPUT CAPACITANCE RISE TIME tp 3 200 ns tr 3 2 ns d = 0.02 Zi > 100 kW Ci < 12 pF 5 ns tr < VCC Vi +16.2 V R2 R1 0 D.U.T. R3 Vi TIME Vo OSCILLOSCOPE D1 R4 -13.8 V tf 100 ms VBB Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time http://onsemi.com 3 PZT2222A, SPZT2222A PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE N D b1 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM A 1.50 1.63 1.75 0.060 0.064 A1 0.02 0.06 0.10 0.001 0.002 b 0.60 0.75 0.89 0.024 0.030 b1 2.90 3.06 3.20 0.115 0.121 c 0.24 0.29 0.35 0.009 0.012 D 6.30 6.50 6.70 0.249 0.256 E 3.30 3.50 3.70 0.130 0.138 e 2.20 2.30 2.40 0.087 0.091 e1 0.85 0.94 1.05 0.033 0.037 L 0.20 --- --- 0.008 --- L1 1.50 1.75 2.00 0.060 0.069 HE 6.70 7.00 7.30 0.264 0.276 0 10 0 - - q STYLE 1: PIN 1. 2. 3. 4. L1 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 0.078 0.287 10 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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