BUZ 100S SIPMOS Power Transistor Features Product Summary * N channel Drain source voltage VDS * Drain-Source on-state resistance RDS(on) 0.015 Continuous drain current ID Enhancement mode * Avalanche rated 55 V 77 A * dv/dt rated * 175C operating temperature Type Package Ordering Code Packaging BUZ100S P-TO220-3-1 Q67040-S4001-A2 Tube BUZ100S E3045A P-TO263-3-2 Q67040-S4001-A6 Tape and Reel BUZ100S E3045 P-TO263-3-2 Q67040-S4001-A5 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 C 77 TC = 100 C 55 Pulsed drain current Unit IDpulse 308 EAS 380 EAR 17 dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 170 W -55... +175 C TC = 25 C Avalanche energy, single pulse mJ ID = 77 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s IS = 77 A, VDS = 40 V, di/dt = 200 A/s, Tjmax = 175 C TC = 25 C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 05.99 BUZ 100S Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.88 Thermal resistance, junction - ambient, leded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling areaF) - - 40 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - Gate threshold voltage, VGS = VDS ID = 130 A VGS(th) 2.1 3 4 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA A VDS = 50 V, VGS = 0 V, T j = 25 C - 0.1 1 VDS = 50 V, VGS = 0 V, T j = 150 C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 , ID = 55 A - 0.01 0.015 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BUZ 100S Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. g fs 25 40 - S Ciss - 1900 2375 pF Coss - 615 770 Crss - 310 390 t d(on) - 15 25 tr - 30 45 t d(off) - 40 60 tf - 25 40 Dynamic Characteristics Transconductance VDS2*ID*RDS(on)max , ID = 55 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 10 V, ID = 77 A, RG = 4.7 Rise time VDD = 30 V, V GS = 10 V, ID = 77 A, RG = 4.7 Turn-off delay time VDD = 30 V, V GS = 10 V, ID = 77 A, RG = 4.7 Fall time VDD = 30 V, V GS = 10 V, ID = 77 A, RG = 4.7 Data Sheet 3 05.99 BUZ 100S Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. Q gs - 14 21 Q gd - 31 46.5 Qg - 65 100 V(plateau) - 5.9 - V IS - - 77 A I SM - - 308 VSD - 1.25 1.8 V t rr - 105 160 ns Q rr - 0.16 0.25 C Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 77 A Gate to drain charge VDD = 40 V, ID = 77 A Gate charge total VDD = 40 V, ID = 77 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 77 A Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage VGS = 0 V, I F = 154 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 BUZ 100S Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS 10 V BUZ100S BUZ100S 85 180 A W 70 140 ID Ptot 60 120 50 100 40 80 30 60 40 20 20 10 0 0 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160 C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 C parameter : D = tp /T 10 3 BUZ100S 10 1 K/W 10 0 tp = 31.0s A /I D 10 -1 Z thJC 100 s DS 2 10 -2 R DS ( on ) = ID V 10 BUZ100S 10 1 ms 10 -3 10 ms 10 -4 D = 0.50 0.20 1 0.10 0.05 0.02 single pulse DC 10 0 -1 10 10 0 10 1 V 10 10 10 -6 -7 10 2 VDS Data Sheet 0.01 -5 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 BUZ 100S Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 s parameter: V GS BUZ100S 180 BUZ100S Ptot = 170W l A 0.050 k j b c d e f g h i i V GS [V] 4.0 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 d k 10.0 l 20.0 120 ID g 100 f 80 e 60 40 0.040 RDS(on) a h b 140 0.020 0.015 k b 1.0 2.0 3.0 j 0.010 0.005 a 0 0.0 0.030 0.025 c 20 0.035 4.0 V 5.5 0.000 0 VDS l VGS [V] = b 4.5 c 5.0 20 d 5.5 e f 6.0 6.5 40 60 g 7.0 80 h i 7.5 8.0 100 j 9.0 k l 10.0 20.0 140 A 170 120 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 s VDS 2 x I D x RDS(on) max gfs = f(ID ); Tj = 25C parameter: gfs 70 45 S A 35 50 gfs ID 30 40 25 20 30 15 20 10 10 5 0 2 3 4 V 0 0 6 VGS Data Sheet 10 20 30 40 50 A 65 ID 6 05.99 BUZ 100S Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 130 A parameter : ID = 55 A, VGS = 10 BUZ100S 5.0 V 0.055 4.4 4.0 VGS(th) RDS(on) 0.045 0.040 0.035 3.6 3.2 2.8 0.030 max 2.4 0.025 2.0 98% 0.020 1.6 typ 0.015 0.8 0.010 min 0.4 0.005 0.000 -60 typ 1.2 0.0 -60 -20 20 60 100 140 C -20 20 60 100 140 200 C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 s 10 4 10 3 BUZ100S A pF 10 2 C IF C iss 10 3 C oss 10 1 Tj = 25 C typ C rss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 25 30 V 10 0 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 100S Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 77 A, V DD = 25 V RGS = 25 VGS = f (QGate ) parameter: ID puls = 77 A BUZ100S 400 16 mJ V 320 12 VGS EAS 280 240 200 10 0,2 VDS max 0,8 VDS max 8 160 6 120 4 80 2 40 0 20 40 60 80 100 120 140 C 0 0 180 Tj 20 40 60 80 nC 110 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ100S 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 C 200 Tj Data Sheet 8 05.99