FDD850N10LD BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) 100 V, 15.3 A, 75 m Features Description * RDS(on) = 61 m (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor's PowerTrench(R) process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. * RDS(on) = 64 m (Typ.) @ VGS = 5.0 V, ID = 12 A * Low Gate Charge (Typ. 22.2 nC) * Low Crss (Typ. 42 pF) * Fast Switching The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. * 100% Avalanche Tested Applications * Improved dv/dt Capability * LED Monitor Backlight * RoHS Compliant * LED TV Backlight * LED Lighting * Consumer Appliances, DC-DC converter (Step up & Step down) 3 3 1 2 4 5 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 4,5 1 TO252-5L 2 Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - Continuous (TC = 25oC) Unit V 20 V 15.3 - Continuous (TC = 100oC) A 9.7 IDM Drain Current (Note 1) 46 A EAS Single Pulsed Avalanche Energy (Note 2) 41 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation PD - Pulsed FDD850N10LD 100 (TC = 25oC) - Derate Above 25oC 42 W 0.33 W/oC IF(AV) Diode Average Rectified Forward Current (TC = 138oC) 5 A IFSM Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave 50 A TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDD850N10LD RJC Thermal Resistance, Junction to Case for MOSFET, Max. 3.0 RJC Thermal Resistance, Junction to Case for Diode, Max. 2.5 RJA Thermal Resistance, Junction to Ambient, Max. 87 (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 1 Unit o C/W www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) November 2013 Part Number FDD850N10LD Top Mark 850N10LD Package TO-252 5L Packing Method Tape and Reel Reel Size 13" Tape Width 16 mm Quantity 2500 units Electrical Characteristics of the MOSFET TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.1 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, Referenced to 25oC VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, TC = 125oC - - 500 VGS = 20 V, VDS = 0 V - - 100 nA VGS = VDS, ID = 250 A V A On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 - 2.5 VGS = 10 V, ID = 12 A - 61 75 VGS = 5 V, ID =12 A VDS = 10 V, ID = 15.3 A - 64 96 - 31 - - 1100 1465 pF - 80 105 pF m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qg(tot) Total Gate Charge at 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance (G-S) VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 80 V, ID = 15.3 A (Note 4) f = 1 MHz - 42 - pF - 22.2 28.9 nC - 12.3 16.0 nC - 3.0 - nC - 5.7 - nC - 1.75 - - 17 44 ns - 21 52 ns - 27 64 ns - 8 26 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50 V, ID = 15.3 A, VGS = 5 V, RG = 4.7 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 15.3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 46 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.3 V trr Reverse Recovery Time - 38 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 15.3 A, VDS = 80 V, dIF/dt = 100 A/s - 50 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1 mH, IAS = 9.1 A, RG = 25 , starting TJ = 25C. 3. ISD 15.3 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 2 www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) Package Marking and Ordering Information VR Symbol Parameter DC Blocking Voltage Test Conditions IR = 250 A VFM Maximum Instantaneous Forward Voltage IF = 5 A IRM Maximum Instantaneous Reverse Current @ rated VR trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge WAVL Avalanche Energy (L = 40 mH) (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 TC = 25oC Max. - - - 2.5 - 0.9 - - - 50 TC = 125oC - - 1000 - 10.7 22 TC = 125oC - 14.5 - - 2.2 5 TC = 125oC - 3.4 - - 11.7 - TC = 125oC - 24.7 - 10 - - TC = 25oC TC = 25oC TC = 25oC 3 Typ. - TC = 125oC TC = 25oC IF = 5 A, dI/dt = 200 A/s Min. 150 Unit V V uA ns A nC mJ www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) Electrical Characteristics of the Diode TC = 25oC unless otherwise noted. Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 46 VGS = 15.0V 10.0V 6.0V 5.0V 3.5V 3.0V *Notes: 1. VDS = 10V 2. 250s Pulse Test ID, Drain Current[A] ID, Drain Current[A] 46 10 10 o 150 C o 25 C o -55 C 1 *Notes: 1. 250s Pulse Test o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 4 VGS, Gate-Source Voltage[V] 46 IS, Reverse Drain Current [A] 0.16 0.12 VGS = 5V 0.08 VGS = 10V 0.04 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o 0.00 *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 2. 250s Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 5000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.20 RDS(ON) [], Drain-Source On-Resistance 0 Ciss Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 0.1 1 10 VDS, Drain-Source Voltage [V] (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 Crss 0 100 4 *Note: ID = 15.3A 0 4 8 12 16 20 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) Typical Performance Characteristics - MOSFET Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.10 1.05 1.00 0.95 0.90 -100 *Notes: 1. VGS = 0V 2. ID = 250A -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10 V 2. ID = 12 A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 100 18 1 Operation in This Area is Limited by R DS(on) 0.1 ID, Drain Current [A] ID, Drain Current [A] 15 100s 10 1ms 10ms 100ms DC *Notes: VGS = 10V 9 VGS = 5V 6 o 1. TC = 25 C 3 o 0.01 0.1 12 2. TJ = 150 C 3. Single Pulse o RJC = 3.0 C/W 0 25 1 10 100 200 VDS, Drain-Source Voltage [V] (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 5 50 75 100 125 o TC, Case Temperature [ C] 150 www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) Typical Performance Characteristics - MOSFET (Continued) Figure 11. Diode Forward Voltage Drop vs. Forward Current Figure 12. Diode Reverse Current vs. Reverse Voltage 5000 50 1000 10 Reverse Current , IR [nA] Forward Current, IF [A] o o TC = 125 C o TC = 75 C o TC = 25 C TC = 125 C 100 o TC = 75 C 10 1 o TC = 25 C 1 0.0 0.1 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 Figure 13. Diode Junction Capacitance 100 20 Reverse Recovery Time, trr [ns] Typical Capacitance at 0V = 183 pF 150 100 50 0 0.1 1 10 Reverse Voltage, VR [V] o TC = 125 C o TC = 75 C 10 o TC = 25 C 200 300 di/dt [A/s] 400 500 Figure 16. Diode Forward Current Derating Curve 30 Average Forward Current, IF(AV) [A] 8 o TC = 125 C 6 o TC = 75 C 4 o TC = 25 C 2 0 100 120 IF = 5A 15 5 100 100 Figure 15. Diode Reverse Recovery Current vs. di/dt Reverse Recovery Current, Irr [A] 40 60 80 Reverse Voltage, VR [V] Figure 14. Diode Reverse Recovery Time vs. di/dt 200 Capacitances , Cj [pF] 10 20 IF = 5A 200 300 di/dt [A/s] (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 400 25 20 15 10 5 0 25 500 6 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) Typical Performance Characteristics - Diode (Continued) FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) Typical Performance Characteristics (Continued) Figure 17. Transient Thermal Response Curve of MOSFET Thermal Response [ZJC] ZJC(t), Thermal Response [oC/W] 4 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 *Notes: Single pulse 0.01 -5 10 t2 o 1. ZJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 10 10 Rectangular t1, RectangularPulse PulseDuration Duration [sec] [sec] -1 10 1 Figure 18. Transient Thermal Response Curve of Diode JC o ZThermal Response JC(t), Thermal Response [Z [ ]C/W] 3 1 0.5 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 *Notes: 0.01 -5 10 (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 t2 o Single pulse 1. ZJC(t) = 2.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 10 10 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] 7 -1 10 1 www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) IG = const. Figure 19. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT VGS 10V 90% 10% td(on) tr t on td(off) tf t off Figure 20. Resistive Switching Test Circuit & Waveforms VGS Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 8 www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 9 www.fairchildsemi.com FDD850N10LD -- BoostPak (N-Channel PowerTrench(R) MOSFET + Diode) Mechanical Dimensions Figure 23. TO252 (D-PAK), Molded, 5-Lead, Option AD Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-005 (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 10 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. 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