SST12LP14-QVCE - Microchip Technology, Inc.

Microchip Technology Company

Data Sheet

www.microchip.com

Features

• High Gain:

– Typically 30 dB gain across 2.4~2.5 GHz over tempera-

ture 0°C to +80°C

• High linear output power:

– >26.5 dBm P1dB

– Meets 802.11g OFDM ACPR requirement up to 23 dBm

– Added EVM ~4% up to 20 dBm for

54 Mbps 802.11g signal

– Meets 802.11b ACPR requirement up to 24 dBm

• High power-added efficiency/Low operating cur-

rent for both 802.11g/b applications

– ~22% @ POUT = 22 dBm for 802.11g

– ~26% @ POUT = 23.5 dBm for 802.11b

• Built-in Ultra-low IREF power-up/down control

–I

REF <4 mA

• Low idle current

– ~60 mA ICQ

• High-speed power-up/down

– Turn on/off time (10%~90%) <100 ns

– Typical power-up/down delay with driver delay included

<200 ns

• High temperature stability

– ~1 dB gain/power variation between 0°C to +80°C

– ~1 dB detector variation over 0°C to +80°C

• Low shut-down current (< 0.1 µA)

• On-chip power detection

• 25 dB dynamic range on-chip power detection

• Simple input/output matching

• Packages available

– 16-contact VQFN (3mm x 3mm)

– Non-Pb (lead-free) packages available

Applications

• WLAN (IEEE 802.11g/b)

• Home RF

• Cordless phones

• 2.4 GHz ISM wireless equipment

2.4 GHz Power Amplifier

SST12LP14

The SST12LP14 is a high-performance power amplifier IC based on the highly-

reliable InGaP/GaAs HBT technology. Easily configured for high-power, high-effi-

ciency applications with superb power-added efficiency, it typically provides 30 dB

gain with 22% power added efficiency. The SST12LP14 has excellent linearity

while meeting 802.11g spectrum mask at 23 dBm.It is ideal for the final stage

power amplification in battery-powered 802.11g/b WLAN transmitter applications,

and is offered in 16-contact VQFN package.

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Product Description

The SST12LP14 is a high-performance power amplifier IC based on the highly-reliable InGaP/

GaAs HBT technology.

The SST12LP14 can be easily configured for high-power, high-efficiency applications with superb

power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides

30 dB gain with 22% power-added efficiency @ POUT = 22 dBm for 802.11g and 27% power-

added efficiency @ POUT = 24 dBm for 802.11b.

The SST12LP14 has excellent linearity, typically <4% added EVM up to 20 dBm output power

which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23

dBm. The SST12LP14 also has wide-range (>25 dB), temperature-stable (~1 dB over 80°C), sin-

gle-ended/differential power detectors which lower users’ cost on power control.

The power amplifier IC also features easy board-level usage along with high-speed power-up/

down control. Ultra-low reference current (total IREF <4 mA) makes the SST12LP14 controllable by

an on/off switching signal directly from the baseband chip. These features coupled with low operat-

ing current make the SST12LP14 ideal for the final stage power amplification in battery-powered

802.11g/b WLAN transmitter applications.

The SST12LP14 is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1

for pin descriptions.

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Functional Blocks

Figure 1: Functional Block Diagram

56 8

VCC1

VCCb

VREF1

VREF2

Det_ref

VCC2

RFOUT

Det

RFIN

Bias Circuit

1279 B1.1

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Pin Assignments

Figure 2: Pin Assignments for 16-contact VQFN

Pin Descriptions

Table 1: Pin Description

Symbol Pin No. Pin Name Type1

1. I=Input, O=Output

Function

GND 0 Ground The center pad should be connected to RF ground with several low

inductance, low resistance vias.

NC 1 No Connection Unconnected pins.

RFIN 2 I RF input, DC decoupled

RFIN 3 I RF input, DC decoupled

NC 4 No Connection Unconnected pins.

VCCb 5 Power Supply PWR Supply voltage for bias circuit

VREF1 6 PWR 1st stage idle current control

VREF2 7 PWR 2nd stage idle current control

Det_ref 8 O On-chip power detector reference

Det 9 O On-chip power detector

RFOUT 10 O RF output

RFOUT 11 O RF output

VCC2 12 Power Supply PWR Power supply, 2nd stage

NC 13 No Connection Unconnected pins.

NC 14 No Connection Unconnected pins.

NC 15 No Connection Unconnected pins.

VCC1 16 Power Supply PWR Power supply, 1st stage

T1.0 75031

56 8

VCC1

15 14

VCCb

VREF1

VREF2

Det_ref

VCC2

RFOUT

Det

RFIN

1279 16-vqfn P1.1

Top View

(contacts facing down)

RF and DC GND

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Electrical Specifications

The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and

current specifications. Refer to Figures 3 through 13 for the RF performance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute

Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these conditions or conditions greater than those defined in the

operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-

ditions may affect device reliability.)

Supply Voltage at pins 5, 12, and 16 (VCC)..................................-0.3V to +4.6V

Reference voltage to pin 6 (VREF1) and pin 7 (VREF2)..........................-0.3V to +3.6V

DC supply current (ICC)...................................................... 500mA

Operating Temperature (TA) ............................................ -40ºC to +85ºC

Storage Temperature (TSTG)........................................... -40ºC to +120ºC

Maximum Junction Temperature (TJ) ........................................... +150ºC

Surface Mount Solder Reflow Temperature: .............. “with-Pb” units1: 240°C for 3 seconds

1. Certain “with-Pb” package types are capable of 260°C for 3 seconds; please consult the factory for the latest informa-

tion.

...................................................“non-Pb” units: 260°C for 3 seconds

Table 2: Operating Range

Range Ambient Temp VDD

Industrial -40°C to +85°C 3.3V

T2.1 75031

Table 3: DC Electrical Characteristics

Symbol Parameter Min. Typ Max. Unit Test Conditions

VCC Supply Voltage at pins 5, 12, 16 3.0 3.3 4.2 V

ICC Supply Current

for 802.11g, 24 dBm 290 mA

for 802.11g, 25 dBm 340 mA

ICQ Idle current for 802.11g to meet EVM @ 20.5 dBm 55 mA

IOFF Shut down current 0.1 µA

VREG1 Reference Voltage for 1st Stage, with 120resistor 2.7 2.9 3.1 V

VREG2 Reference Voltage for 2nd Stage, with 360resistor 2.7 2.9 3.1 V

VREG1 Reference Voltage for 1st Stage, with 220resistor 2.9 3.1 3.3 V

VREG2 Reference Voltage for 2nd Stage, with 590resistor 2.9 3.1 3.3 V

T3.0 75031

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Table 4: AC Electrical Characteristics for Configuration

Symbol Parameter Min. Typ Max. Unit

FL-U Frequency range 2400 2485 MHz

POUT Output power

@ PIN = -7 dBm 11b signals 23 dBm

@ PIN = -10 dBm 11g signals 20 dBm

G Small signal gain 30 31 33 dB

GVAR1 Gain variation over band (2400~2485 MHz) ±0.5 dB

GVAR2 Gain ripple over channel (20 MHz) 0.2 dB

ACPR Meet 11b spectrum mask 23 dBm

Meet 11g OFDM 54 MBPS spectrum mask 22 dBm

Added EVM @ 20 dBm output with 11g OFDM 54 MBPS signal 3 %

2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors -40 dBc

T4.0 75031

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Typical Performance Characteristics

Test Conditions: VCC = 3.3V, TA= 25°C

Figure 3: S-Parameters

Figure 4: Input Return Loss

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Figure 5: In-band Gain Flatness

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Typical Performance Characteristics

Test Conditions: F1 = 2.45 GHz, F2 = 2.451 GHz

Figure 6: POUT vs PIN

Figure 7: IM3vsP

OUT

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Figure 8: Detectors vs POUT

Figure 9: Gain vs POUT

Figure 10:PAE for Two Tone

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Typical Performance Characteristics

Test Conditions: VCC = 3.3V, TA= 25°C, F = 2.45 GHz, 54 Mbps 802.11g OFDM signal

Figure 11:802.11g Spectrum at 22/23 dBm, DC current 210/240 mA

Figure 12:802.11g Added EVM for 54 Mbps 802.11g Signal

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Figure 13:802.11b Spectrum at 24 dBm, DC current consumption 280 mA

Figure 14:Typical Schematic for High-Power, High-Efficiency 802.11b/g Applications

R1=120Ω, R2=360 and

VREG1=VREG2=2.8~3.0V

R1=220Ω, R2=590 and

VREG1=VREG2=2.9~3.3V

5678

16 15

Bias circuit

50Ω/150mil 50Ω RFOUT

10pF10pF

2.4pF

50 /140mil

50Ω RFin

VREG1 VREG2

14 13

4.7 μF

0.1 μF

Vcc

0.1 μF

12nH/06

R2 360*Ω

R1 120Ω

100pF 0.1 μF

Det_ref Det

10pF 10pF

2.0pF

100pF 100pF

1279 Schematic.0.1

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Product Ordering Information

Valid combinations for SST12LP14

SST12LP14-QVC

SST12LP14-QVCE

SST12LP14 Evaluation Kits

SST12LP14-QVC-K

SST12LP14-QVCE-K

Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST

sales representative to confirm availability of valid combinations and to determine availability of new combi-

nations.

SST 12 LP 14 - QVCE

XX XX XX -XXXX

Environmental Attribute

E1= non-Pb contact (lead) finish

Package Modifier

C = 16 contact

Package Type

QV = VQFN

Product Family Identifier

Product Type

P = Power Amplifier

Voltage

L = 3.0-3.6V

Frequency of Operation

2 = 2.4 GHz

Product Line

1 = RF product

1. Environmental suffix “E” denotes non-Pb sol-

der. SST non-Pb solder devices are “RoHS

Compliant”.

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Packaging Diagrams

Figure 15:16-Contact Very-thin Quad Flat No-lead (VQFN)

SST Package Code: QVC

Note: 1. Complies with JEDEC JEP95 MO-220J, variant VEED-4 except external paddle nominal dimensions.

2. From the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch.

3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads.

This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit.

Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.

4. Untoleranced dimensions are nominal target dimensions.

5. All linear dimensions are in millimeters (max/min).

16-vqfn-3x3-QVC-2.0

1.7

0.5 BSC

See notes

2 and 3

Pin 1

0.30

0.18

0.075

1.7

0.2

0.05 Max 0.45

0.35

1.00

0.80

Pin 1

TOP VIEW BOTTOM VIEWSIDE VIEW

1mm

3.00

± 0.075

3.00

± 0.075

2.4 GHz Power Amplifier

SST12LP14

Data Sheet

Microchip Technology Company

Table 5:Revision History

Revision Description Date

00 •DS75031: SST conversion of data sheet GP1214 Jan 2005

01 •Updated document status from Preliminary Specification to Data Sheet Apr 2008

02 •Updated “Contact Information” on page 12. Feb 2009

A•Applied new document format

•Released document under letter revision system

•Updated Spec number from S71279 to DS75031

Oct 2011

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registered trademarks mentioned herein are the property of their respective owners.

Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current

package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.

Memory sizes denote raw storage capacity; actual usable capacity may be less.

SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of

Sale.

For sales office locations and information, please see www.microchip.com.

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A Microchip Technology Company

www.microchip.com

ISBN:978-1-61341-699-0