Rev. 4514I–WLAN–07/04
Features
•Frequency Range 4.9 GHz to 5.9 GHz
•Supply-voltage 2.7 V to 3.6 V
•3.5% EVM at 19 dBm Output Power at 54 Mbit/s OFDM
•25.5 dBm P1dB
•On-chip Power Detector with 25 dBm Dynamic Range
•Power-down Mode and Biasing Control
•Low Profile Lead-free Plastic Package QFN16 (4 × 4 × 0.9 mm)
Applications
•IEEE 802.11a OFDM WLAN
•Hiperlan2 WLAN
•PC Cards, PCMCIA
•5 GHz ISM Band Application
Electrostatic sensitive device.
Observe precautions for handling.
Description
Process
The 5-GHz power amplifier is designed in Atmel’s advanced Silicon-Germanium
(SiGe) process and provides excellent linearity and noise performance as well as
good power-added efficiency.
Circuitry
The PA consists of a two-stage amplifier with a P1db of 25.5 dBm. The output stage
was realized using an open-collector structure. Power-up/down and output level are
controlled at bias control pin 6 (VCTL). An on-chip power detector provides a voltage
proportional to the output power.
Figure 1. Block Diagram
Matching
RFIN
3
RFOUT
11
6
VCTL
16
VCC_CTL
VCC1
15
VCC2
13
ATR3515
RFOUT
10
Bias control Power
Detector
7
VDET_OUT
5-GHz WLAN
Power Amplifier
for 802.11a
ATR3515
Preliminary
2 ATR3515 [Preliminary]
4514I–WLAN–07/04
Pin Configuration
Figure 2. Pinning QFN16
GND
NC
RFIN
GND
GND
RFOUT
RFOUT
GND
VCC_CTL
VCC1
GND
VCC2
GND
VCTL
VDET_OUT
GND
16 15 14 13
5 6 7 8
1
2
3
4
12
11
10
9
ATR3515
GND on the
Paddel
Pin Description
Pin Symbol Function
1 GND Ground
2 NC Not connected
3 RFIN RF input
4 GND Ground
5 GND Ground
6 VCTL Power-up/biasing control voltage
7 VDET_OUT Power detector output voltage
8 GND Ground
9 GND Ground
10 RFOUT RF output
11 RFOUT RF output
12 GND Ground
13 VCC2 Supply voltage for PA stage
14 GND Ground
15 VCC1 Supply voltage for driver stage
16 VCC_CTL Supply voltage for biasing control
Paddel – Ground
3
ATR3515 [Preliminary]
4514I–WLAN–07/04
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters Symbol Value Unit
Supply voltage VCC 3.9 V
Supply current ICC 800 mA
Junction temperature Tj150 °C
Storage temperature TStg -40 to +125 °C
Input RF power PIN 12 dBm
Control voltage power up/down and biasing VCTL 0 to 2.0 V
Note: The part may not survive all maximums applied simultaneously.
Operating Range
Parameters Symbol Value Unit
Supply voltage range VCC 2.7 to 3.6 V
Ambient temperature range Tamb -25 to +75 °C
Electrical Characteristics
No. Parameters Test Conditions Symbol Min. Typ. Max. Unit
1.0 Supply voltage VCC 2.7 3.3 3.6 V
1.1 Frequency range f 4.9 5.9 GHz
1.2 Control voltage range PA operating mode VCTL 1.25 1.6 V
1.3 Power down mode VCTL 0.2 V
1.4 Control current PA Operation ICTL 200 µA
1.5 Current consumption Quiescent Icq 110 mA
1.6 Current consumption Power down mode Ipd 10 µA
1.7 Turn on/off time
ON is the time that ICC
returns to normal and
OFF is the time the
current needs to
decrease to 10% of
normal mode
ton/off 0.5 0.6 µs
1.8 Input and output return
loss With external matching -12 -8 dB
1.9
Spectrum mask(1)
At ±11 MHz offset from
carrier -22 dBr
1.10 At ±20 MHz offset from
carrier -30 dBr
1.11 At ±30 MHz offset from
carrier -42 dBr
Note: 1. OFDM signal according to 802.11a specification with Pout = 21 dBm at 54 Mbps.
4 ATR3515 [Preliminary]
4514I–WLAN–07/04
Electrical Characteristics - Unmodulated Carrier
Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C
No. Parameters Test Conditions Symbol Min. Typ. Max. Unit
2.0 Saturated output power For reference Psat 26.5 dBm
2.1 P1dB output power P1dB 25.5 dBm
2.3 Small signal gain Icq = 180 mA, small
signal condition GL 18 dB
2.4 Gain deviation Within 200 MHz
frequency band Gd -1 +1 dB
2.5 Reverse isolation ISOr 30 36 dB
Electrical Characteristics - 54 Mbps OFDM-modulation
Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C, IEEE802.11a conform 54 Mbps OFDM
modulation, EVM measurement equipment noise floor is included in EVM measurement result.
No. Parameters Test Conditions Symbol Min. Typ. Max. Unit
3.0 Error vector magnitude POUT = 19 dBm EVM 3.5 %
3.1 Linear power gain POUT = 19 dBm GL 18 dB
3.2 Current consumption POUT = 19 dBm ICC 240 mA
Electrical Characteristics - Power Detector
Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C.
No. Parameters Test Conditions Symbol Min. Typ. Max. Unit
4.0 Detector voltage range POUT = 2 to 27 dBm VDET 01.7V
4.2 Settling time tset 0.5 µs
5
ATR3515 [Preliminary]
4514I–WLAN–07/04
Figure 3. Application Circuit
VCC_CTL
VCC1
Input
VCTL
* microstrip line
*
Output
VCC2
ATR3515
*
*
VDET_OUT
6 ATR3515 [Preliminary]
4514I–WLAN–07/04
Package Information
Ordering Information
Extended Type Number Package Remarks
ATR3515-PEP QFN16 - 4x4 Taped and reeled, MOQ 1500
ATR3515-PEQ QFN16 - 4x4 Taped and reeled, MOQ 6000
Printed on recycled paper.
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warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
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4514I–WLAN–07/04
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