Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
1
General Description
The AUR9703 is a high efficiency step-down
DC-DC voltage converter. The chip operation is
optimized using constant frequency, peak-current
mode architecture with built-in synchronous power
MOSFET switchers and internal compensators to
reduce external part counts. It is automatically
switching between the normal PWM mode and LDO
mode to offer improved system power efficiency
covering a wide range of loading conditions.
The oscillator and timing capacitors are all built-in
providing an internal switching frequency of 1.5MHz
that allows the use of small surface mount inductors
and capacitors for portable product implementations.
Additional features included Soft Start (SS), Under
Voltage Lock Out (UVLO), and Thermal Shutdown
Detection (TSD) to provide reliable product
applications.
The device is available in adjustable output voltage
versions ranging from 1V to 3.3V, and is able to
deliver up to 800mA.
The AUR9703 is available in TSOT-23-5 package.
Features
• High Efficiency Buck Power Converter
• Low Quiescent Current
• Output Current: 800mA
• Adjustable Output Voltage from 1V to 3.3V
• Wide Operating Voltage Range: 2.5V to 5.5V
• Built-in Power Switches for Synchronous
Rectification with High Efficiency
• Feedback Voltage: 600mV
• 1.5MHz Constant Frequency Operation
• Automatic PWM/LDO Mode Switching Control
• Thermal Shutdown Protection
• Low Drop-out Operation at 100% Duty Cycle
• No Schottky Diode Required
Applications
• Mobile Phone, Digital Camera and MP3 Player
• Headset, Radio and Other Hand-held Instrument
• Post DC-DC Voltage Regulation
• PDA and Notebook Computer
Figure 1. Package Type of AUR9703
TSOT-23-5
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
2
Pin Configuration
H Package
(TSOT-23-5)
1
2
34
5
Figure 2. Pin Configuration of AUR9703 (Top View)
Pin Description
Pin Number Pin Name Function
1 EN Enable signal input, active high
2 GND
This pin is the GND reference for the NMOS power stage. It
must be connected to the system ground
3 LX Connect to inductor
4 VIN Power supply input
5 FB Feedback voltage from the output
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
3
Functional Block Diagram
Figure 3. Functional Block Diagram of AUR9703
Ordering Information
AUR9703 A
Circuit Type
A: Adjustable Output
5
Package Temperature
Range Part Number Marking ID Packing Type
TSOT-23-5 -40 to 80°C AUR9703AGH 9703AG Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G" in the part number, are RoHS compliant and
green.
Package
H: TSOT-23-5
G: Green
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
4
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Supply Input Voltage VIN 0 to 6.0 V
Enable Input Voltage VEN -0.3 to VIN+0.3 V
Output Voltage VOUT -0.3 to VIN+0.3 V
Power Dissipation (On PCB, TA=25°C) PD 0.85 W
Thermal Resistance (Junction to Ambient, Simulation) θJA 118.31 °C/W
Thermal Resistance (Junction to Case, Simulation) θJC 113.67 °C/W
Operating Junction Temperature TJ 160 °C
Operating Temperature TOP -40 to 85 °C
Storage Temperature TSTG -55 to 150 °C
ESD (Human Body Model) VHBM 2000 V
ESD (Machine Model) VMM 200 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Input Voltage VIN 2.5 5.5 V
Junction Temperature Range TJ -20 125 °C
Ambient Temperature Range TA -40 80 °C
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
5
Electrical Characteristics
VIN=5V, VOUT=3.3V, VFB=0.6V, L=2.2µH, CIN=4.7µF, COUT=10µF, TA=25°C, IMAX=800mA. Unless
otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
Input Voltage Range VIN 2.5 5.5 V
Shutdown Current IOFF V
EN=0 0.1 1 µA
Regulated1Feedback
Voltage VFB For Adjustable Output Voltage 0.585 0.6 0.615 V
Regulated Output
Voltage Accuracy ∆VOUT/VOUT VIN=2.5V to 5.5V,
IOUT=0 to 800mA -3 3 %
Peak Inductor
Current IPK V
IN=5V, VFB=0.5V 1.2 A
Oscillator Frequency fOSC V
IN=5V 1.2 1.5 1.8 MHz
PMOSFET RON R
ON(P) V
IN=5V, IOUT=200mA 0.25 Ω
NMOSFET RON R
ON(N) V
IN=5V, IOUT=200mA 0.27 Ω
Quiescent Current IQ I
OUT=0A, VFB= 0.7V 100 µA
LX Leakage Current ILX VEN=0V, VLX=0V or 5V,
VIN=5V 0.1 1 µA
Feedback Current IFB 30 nA
Soft Start Time tSS 200 µs
EN Leakage Current IEN 0.01 0.1 µA
EN High-level Input
Voltage VEN_H V
IN=2.5V to 5.5V 1.5 V
EN Low-Level Input
Voltage VEN_L V
IN=2.5V to 5.5V 0.6 V
Under Voltage Lock
Out VUVLO 1.8 V
Hysteresis 0.1 V
Thermal Shutdown TSD 160 °C
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
6
Typical Performance Characteristics
Figure 4. Efficiency vs. Output Current (VOUT=1.0V) Figure 5. Efficiency vs. Output Current (VOUT=1.2V)
Figure 6. Efficiency vs. Output Current (VOUT=1.8V) Figure 7. Efficiency vs. Output Current (VOUT=2.5V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
10
20
30
40
50
60
70
80
90
100
VIN=2.5V
VIN=3.3V
VIN=4.2V
VIN=5.0V
VIN=5.5V
VOUT=1.0V
Efficiency (%)
Output Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
10
20
30
40
50
60
70
80
90
100
VIN=2.5V
VIN=3.3V
VIN=4.2V
VIN=5.0V
VIN=5.5V
VOUT=1.2V
Efficiency (%)
Output Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
10
20
30
40
50
60
70
80
90
100
VIN = 2.5V
VIN = 3.3V
VIN = 4.2V
VIN = 5.0V
VIN = 5.5V
VOUT=1.8V
Efficiency (%)
Output Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
10
20
30
40
50
60
70
80
90
100
VIN = 3.3V
VIN = 4.2V
VIN = 5.0V
VIN = 5.5V
VOUT=2.5V
Efficiency (%)
Output Current (A)
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
7
Typical Performance Characteristics (Continued)
Figure 8. Efficiency vs. Output Current (VOUT=3.3V) Figure 9. Load Regulation (VOUT=1.0±0.03V)
Figure 10. Load Regulation (VOUT=1.2±0.03V) Figure 11. Load Regulation (VOUT=1.8±0.03V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
10
20
30
40
50
60
70
80
90
100
VIN = 4.2V
VIN = 5.0V
VIN = 5.5V
VOUT=3.3V
Efficiency (%)
Output Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.97
0.98
0.99
1.00
1.01
1.02
1.03
VIN=2.5V
VIN=3.3V
VIN=4.2V
VIN=5.0V
VIN=5.5V
Output Voltage (V)
Output Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
1.16
1.17
1.18
1.19
1.20
1.21
1.22
1.23
1.24
VIN=2.5V
VIN=3.3V
VIN=4.2V
VIN=5.0V
VIN=5.5V
Output Voltage (V)
Output Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
1.75
1.76
1.77
1.78
1.79
1.80
1.81
1.82
1.83
1.84
1.85
VIN=2.5V
VIN=3.3V
VIN=4.2V
VIN=5.0V
VIN=5.5V
Output Voltage (V)
Output Current (A)
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
8
Typical Performance Characteristics (Continued)
Figure 12. Load Regulation (VOUT=2.5±0.03V) Figure 13. Load Regulation (VOUT=3.3±0.03V)
Figure 14. Line Regulation (VOUT=1.0±0.03V) Figure 15. Line Regulation (VOUT=1.2±0.03V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
2.44
2.46
2.48
2.50
2.52
2.54
2.56
VIN=3.3V
VIN=4.2V
VIN=5.0V
VIN=5.5V
Output Voltage (V)
Output Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
3.20
3.22
3.24
3.26
3.28
3.30
3.32
3.34
3.36
3.38
3.40
VIN=4.2V
VIN=5.0V
VIN=5.5V
Output Voltage (V)
Output Current (A)
2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.97
0.98
0.99
1.00
1.01
1.02
1.03
IOUT=0A
IOUT=800mA
Output Voltage (V)
Input Voltage (V)
2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.16
1.17
1.18
1.19
1.20
1.21
1.22
1.23
1.24
IOUT=0A
IOUT=800mA
Output Voltage (V)
Input Voltage (V)
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
9
Typical Performance Characteristics (Continued)
Figure 16. Line Regulation (VOUT=1.8±0.03V) Figure 17. Line Regulation (VOUT=2.5±0.03V)
Figure 18. Line Regulation (VOUT=3.3±0.03V) Figure 19.EN Threshold Voltage vs. Input Voltage
2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.75
1.76
1.77
1.78
1.79
1.80
1.81
1.82
1.83
1.84
1.85
IOUT = 0A
IOUT = 800mA
Output Voltage (V)
Input Voltage (V)
2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.44
2.46
2.48
2.50
2.52
2.54
2.56
IOUT = 0A
IOUT = 800mA
Output Voltage (V)
Input Voltage (V)
3.54.04.55.05.5
3.20
3.22
3.24
3.26
3.28
3.30
3.32
3.34
3.36
3.38
3.40
IOUT = 0A
IOUT = 800mA
Output Voltage (V)
Input Voltage (V)
2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Low Level
High Level
EN Threshold Voltage (V)
Input Voltage (V)
VOUT=1.2V
IOUT=200mA
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
10
Typical Performance Characteristics (Continued)
Figure 20.Frequency vs. Input Voltage Figure 21.Temperature vs. Output Current
Figure 22. Current Limit vs. Input Voltage Figure 23. Start Up through EN
(VIN=5V, VEN= 0 to 5V, VOUT=3.3V, IOUT=800mA)
2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.2
1.3
1.4
1.5
1.6
1.7
1.8
VOUT=1.2V
IOUT=400mA
Frequency (MHz)
Input Voltage (V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
25
30
35
40
45
50
VIN=5.0V
VOUT=1.0V
VOUT=3.3V
Temperature (oC)
Output Current (A)
3.0 3.5 4.0 4.5 5.0 5.5
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
Current Limit (A)
Input Voltage (V)
VOUT=1.2V
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
11
Typical Performance Characteristics (Continued)
Figure 24. Shut Down through EN Figure 25. Start Up through VIN
(VIN=5V, VEN=5V to 0V, VOUT=3.3V, IOUT=800mA) (VIN=0 to 5V, VOUT=3.3V, IOUT=800mA)
Figure 26. Shut Down through VIN Figure 27. Short Circuit Protection
(VIN=5.0 to 0V, VOUT=3.3V, IOUT=800mA) (VIN=5.0V, VOUT =3.3V, IOUT=800mA)
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
12
Typical Performance Characteristics (Continued)
Figure 28. Short Circuit Recovery Figure 29. Load Transition
(VIN=5.0V, VOUT=3.3V, IOUT=800mA) ( VIN=5.0V, VOUT=1.0V, IOUT=50mA to 400mA)
Figure 30. Load Transition Figure 31. Load Transition
(VIN=5.0V, VOUT=3.3V, IOUT=50mA to 400mA) (VIN=5.0V, VOUT=1.0V, IOUT=50mA to 800mA)
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
13
Typical Performance Characteristics (Continued)
Figure 32. Load Transition Figure 33. Output Ripple Voltage
(VIN=5.0V, VOUT=3.3V, IOUT=50mA to 800mA) (VIN=5.0V, VOUT=1.0V, IOUT=10mA)
Figure 34. Output Ripple Voltage Figure 35. Output Ripp le Voltage
(VIN=5V, VOUT=3.3V, IOUT=10mA) (V
IN=5V, VOUT=1.0V, IOUT=400mA)
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
14
Typical Performance Characteristics (Continued)
Figure 36. Output Ripple Voltage Figure 37. Output Ripple Voltage
(VIN=5V, VOUT=3.3V, IOUT=400mA) (V
IN=5V, VOUT=1.0V, IOUT=800mA)
Figure 38. Output Ripple V oltage
(VIN=5V, VOUT=3.3V, IOUT=800mA)
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
15
FB
GND
VOUT
R1
R2
AUR9703
Application Information
The basic AUR9703 application circuit is shown in
Figure 41, external components selection is determined
by the load current and is critical with the selection of
inductor and capacitor values.
1. Inductor Selection
For most applications, the value of inductor is chosen
based on the required ripple current with the range of
2.2µH to 4.7µH.
The largest ripple current occurs at the highest input
voltage. Having a small ripple current reduces the ESR
loss in the output capacitor and improves the efficiency.
The highest efficiency is realized at low operating
frequency with small ripple current. However, larger
value inductors will be required. A reasonable starting
point for ripple current setting is △IL=40%IMAX . For a
maximum ripple current stays below a specified
value, the inductor should be chosen according to the
following equation:
The DC current rating of the inductor should be at
least equal to the maximum output current plus half
the highest ripple current to prevent inductor core
saturation. For better efficiency, a lower
DC-resistance inductor should be selected.
2. Capacitor Selection
The input capacitance, CIN, is needed to filter the
trapezoidal current at the source of the top MOSFET.
To prevent large ripple voltage, a low ESR input
capacitor sized for the maximum RMS current must
be used. The maximum RMS capacitor current is
given by:
It indicates a maximum value at VIN=2VOUT, where
IRMS=IOUT/2. This simple worse-case condition is
commonly used for design because even significant
qw
deviations do not much relieve. The selection of COUT
is determined by the Effective Series Resistance
(ESR) that is required to minimize output voltage
ripple and load step transients, as well as the amount
of bulk capacitor that is necessary to ensure that the
control loop is stable. Loop stability can be also
checked by viewing the load step transient response
as described in the following section. The output
ripple, △VOUT, is determined by:
The output ripple is the highest at the maximum input
voltage since △IL increases with input voltage.
3. Load Transient
A switching regulator typically takes several cycles to
respond to the load current step. When a load step
occurs, VOUT immediately shifts by an amount equal
to △ILOAD×ESR, where ESR is the effective series
resistance of output capacitor. △ILOAD also begins to
charge or discharge COUT generating a feedback error
signal used by the regulator to return VOUT to its
steady-state value. During the recovery time, VOUT
can be monitored for overshoot or ringing that would
indicate a stability problem.
4. Output Voltage Setting
The output voltage of AUR9703 can be adjusted by a
resistive divider according to the following formula:
The resistive divider senses the fraction of the output
voltage as shown in Figure 39.
Figure 39. Setting the Output Voltage
IN
OUTINOUT
OMAXRMS VVVV
II 2
1
)]([ −
×=
)1(
1
IN
OUT
OUTL V
V
V
Lf
I−
×
=∆
]
)(
1][
)(
[MAXV V
MAXIf V
L
IN
OUT
L
OUT −
∆×
=
]
8
1
[
OUT
LOUT Cf
ESRIV ××
+∆≤∆
)1(6.0)1(
2
1
2
1R
R
V
R
R
VV REFOUT +×=+×=
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
16
Application Information (Continued)
5. Efficiency Considerations
The efficiency of switching regulator is equal to the
output power divided by the input power times 100%.
It is usually useful to analyze the individual losses to
determine what is limiting efficiency and which
change could produce the largest improvement.
Efficiency can be expressed as:
Efficiency=100%-L1-L2-…..
Where L1, L2, etc. are the individual losses as a
percentage of input power.
Although all dissipative elements in the regulator
produce losses, two major sources usually account for
most of the power losses: VIN quiescent current and
I2R losses. The VIN quiescent current loss dominates
the efficiency loss at very light load currents and the
I2R loss dominates the efficiency loss at medium to
heavy load currents.
5.1 The VIN quiescent current loss comprises two
parts: the DC bias current as given in the electrical
characteristics and the internal MOSFET switch gate
charge currents. The gate charge current results from
switching the gate capacitance of the internal power
MOSFET switches. Each cycle the gate is switched
from high to low, then to high again, and the packet
of charge, dQ moves from VIN to ground. The
resulting dQ/dt is the current out of VIN that is
typically larger than the internal DC bias current. In
continuous mode,
Where QP and QN are the gate charge of power
PMOSFET and NMOSFET switches. Both the DC
bias current and gate charge losses are proportional to
the VIN and this effect will be more serious at higher
input voltages.
5.2 I
2R losses are calculated from internal switch
resistance, RSW and external inductor resistance RL.
In continuous mode, the average output current
flowing through the inductor is chopped between
power PMOSFET switch and NMOSFET switch.
Then, the series resistance looking into the LX pin is
a function of both PMOSFET RDS(ON) and NMOSFET
RDS(ON) resistance and the duty cycle (D):
Therefore, to obtain the I2R losses, simply add RSW to
RL and multiply the result by the square of the
average output current.
Other losses including CIN and COUT ESR dissipative
losses and inductor core losses generally account for
less than 2 % of total additional loss.
6. Thermal Characteristics
In most applications, the part does not dissipate much
heat due to its high efficiency. However, in some
conditions when the part is operating in high ambient
temperature with high RDS(ON) resistance and high
duty cycles, such as in LDO mode, the heat
dissipated may exceed the maximum junction
temperature. To avoid the part from exceeding
maximum junction temperature, the user should do
some thermal analysis. The maximum power
dissipation depends on the layout of PCB, the thermal
resistance of IC package, the rate of surrounding
airflow and the temperature difference between
junction and ambient.
7. PCB Layout Considerations
When laying out the printed circuit board, the
following checklist should be used to optimize the
performance of AUR9703.
1) The power traces, including the GND trace, the LX
trace and the VIN trace should be kept direct, short
and wide.
2) Place the input capacitor as close as possible to the
VIN and GND pins.
3) The FB pin should be connected directly to the
feedback resistor divider.
4) Keep the switching node, LX, away from the
sensitive FB pin and the node should be kept small
area.
)( NPGATE QQfI +×=
() ()
)(
DRDRR NONDSPONDSSW −×
+
×
=
1
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
17
Application Information (Continued)
Figure 40. Lay out Example of AUR9703
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
18
Typical Application
L2.2µH VIN
FB
GND
LX
EN
1
2
5
3VIN=2.5V to 5.5V
4
CIN
4.7 F
VOUT
COUT
10 F
C1
R1
R2
IR2
Note 2: )1(
2
1
1R
R
VV REFOUT +×= .
When R2=300kΩ to 60kΩ, the IR2=2µA to 10µA, and R1×C1 should be in the range between 3×10-6 and 6×10-6 for
component selection.
Figure 41. Typical Application Circuit of AUR 9703
Table 1. Component Guide
VOUT(V) R1(kΩ) R2(kΩ) C1(pF) L1(µH)
1.0 68 100 82 2.2
1.2 100 100 56 2.2
1.8 200 100 30 2.2
2.5 320 100 18 2.2
3.3 453 100 13 2.2
Data Sheet
1.5MHz, 800mA, STEP DOWN DC-DC CONVERTER AUR9703
Nov. 2011 Rev. 1 .0 BCD Semiconductor Manufacturing Limited
19
Mechanical Dimensions
TSOT-23-5 Unit: mm(inch)
4X7°
5°
GAUGE PLANE
IMPOR TANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
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Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277
