BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features * High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector Emitter Sustaining Voltage - @ 100 mAdc * * * VCEO(sus) = 80 Vdc (Min) - BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors Pb-Free Packages are Available* IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII http://onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS, 65 WATTS 4 TO-220AB CASE 221A STYLE 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BDX53B, BDX54B BDX53C, BDX54C VCEO Collector-Base Voltage BDX53B, BDX54B BDX53C, BDX54C VCB Emitter-Base Voltage VEB 5.0 Vdc IC 8.0 12 Adc Base Current IB 0.2 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.48 W W/C TJ, Tstg -65 to +150 C Symbol Max Unit Collector Current - Continuous - Peak Operating and Storage Junction Temperature Range Value Unit Vdc 80 100 1 2 3 Vdc 80 100 MARKING DIAGRAM & PIN ASSIGNMENT 4 Collector BDX5xyG AY WW THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient RqJA 70 C/W Thermal Resistance, Junction-to-Case RqJC 1.92 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 14 1 1 Base BDX5xy = A Y WW G = = = = 3 Emitter 2 Collector Device Code x = 3 or 4 y = B or C Assembly Location Year Work Week Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: BDX53B/D PD, POWER DISSIPATION (WATTS) BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) TA 4.0 TC 80 3.0 60 TC 2.0 40 1.0 20 TA 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 80 100 - - - - 0.5 0.5 - - 0.2 0.2 hFE 750 - - Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) VCE(sat) - - 2.0 4.0 Vdc Base-Emitter Saturation Voltage (IC = 3.0 Adc, IC = 12 mA) VBE(sat) - 2.5 Vdc hfe 4.0 - - - - 300 200 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) BDX53B, BDX54B BDX53C, BDX54C VCEO(sus) ICEO ICBO Vdc mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C BDX54B, 54C 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. http://onsemi.com 2 Cob pF BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 5.0 VCC - 30 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V2 2.0 SCOPE t, TIME (s) RC APPROX + 8.0 V 0 51 V1 D1 [ 8.0 k [ 120 25 ms -12 V tr, tf v 10 ns DUTY CYCLE = 1.0% tf 1.0 0.7 0.5 0.3 tr 0.2 + 4.0 V APPROX ts 3.0 for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities 0.1 0.07 0.05 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 td @ VBE(off) = 0 V 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 3. Switching Times 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RqJC(t) = r(t) RqJC RqJC = 1.92C/W 0.02 t1 0.03 0.01 0.02 SINGLE PULSE t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC -VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) t 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 500 ms 10 5.0 ms 1.0 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BDX53B, BDX54B BDX53C, BDX54C 20 30 2.0 3.0 5.0 7.0 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area http://onsemi.com 3 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 300 TJ = + 25C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TJ = 25C VCE = 3.0 V IC = 3.0 A 100 50 30 20 10 1.0 Cob 100 Cib 70 50 PNP NPN 2.0 5.0 PNP NPN 10 20 50 100 f, FREQUENCY (kHz) 200 500 30 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Small-Signal Current Gain PNP BDX54B, 54C 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 3000 2000 100 Figure 7. Capacitance NPN BDX53B, 53C 5000 50 TJ = 150C 25C 1000 -55C 5000 TJ = 150C 3000 2000 25C 1000 -55C 500 500 300 200 0.1 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C 2.6 IC = 2.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 Figure 9. Collector Saturation Region http://onsemi.com 4 4.0 A 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 3.0 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.5 10 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages PNP BDX54B, BDX54C +5.0 +4.0 V, TEMPERATURE COEFFICIENT (mV/ C) V, TEMPERATURE COEFFICIENT (mV/ C) NPN BDX53B, BDX53C *IC/IB v hFE/3 +3.0 25C to 150C +2.0 +1.0 -55C to 25C 0 *qVC for VCE(sat) -1.0 -2.0 25C to 150C -3.0 qVB for VBE -55 to 150C -4.0 -5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 +5.0 +4.0 25C to 150C +2.0 +1.0 -55C to 25C 0 *qVC for VCE(sat) -1.0 -2.0 25C to 150C -3.0 qVB for VBE -55 to 150C -4.0 -5.0 7.0 10 *IC/IB v hFE/3 +3.0 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 104 103 105 REVERSE FORWARD IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 105 VCE = 30 V 102 TJ = 150C 101 100 100C 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 104 103 VCE = 30 V 102 101 TJ = 150C 100C 100 25C 10-1 +0.6 +0.4 +0.2 +1.0 +1.2 + 1.4 FORWARD REVERSE VBE, BASEEMITTER VOLTAGE (VOLTS) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 VBE, BASEEMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region http://onsemi.com 5 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) NPN BDX53B BDX53C COLLECTOR PNP BDX54B BDX54C BASE COLLECTOR BASE [ 8.0 k [ 120 [ 8.0 k [ 120 EMITTER EMITTER Figure 13. Darlington Schematic ORDERING INFORMATION Device BDX53B BDX53BG BDX53C BDX53CG BDX54B BDX54BG BDX54C BDX54CG Package Shipping TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BDX53B/D