© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 14
1Publication Order Number:
BDX53B/D
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for generalpurpose amplifier and
lowspeed switching applications.
Features
High DC Current Gain
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) BDX53C, 54C
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
PbFree Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Voltage
BDX53B, BDX54B
BDX53C, BDX54C
ÎÎÎ
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
80
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorBase Voltage
BDX53B, BDX54B
BDX53C, BDX54C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
VCB
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
80
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
EmitterBase Voltage
ÎÎÎ
VEB
ÎÎÎÎ
5.0
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current Continuous
Peak
ÎÎÎ
ÎÎÎ
ÎÎÎ
IC
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
8.0
12
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎ
ÎÎÎÎ
0.2
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
65
0.48
ÎÎÎ
ÎÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
ÎÎÎ
ÎÎÎ
TJ, Tstg
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
65 to +150
ÎÎÎ
ÎÎÎ
ÎÎÎ
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, JunctiontoAmbient
ÎÎÎ
ÎÎÎ
RqJA
ÎÎÎÎ
ÎÎÎÎ
70
ÎÎÎ
ÎÎÎ
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, JunctiontoCase
ÎÎÎ
ÎÎÎ
RqJC
ÎÎÎÎ
ÎÎÎÎ
1.92
ÎÎÎ
ÎÎÎ
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80100 VOLTS, 65 WATTS
TO220AB
CASE 221A
STYLE 1
123
4
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Base
3
Emitter
4
Collector
2
Collector
http://onsemi.com
BDX5xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G=PbFree Package
BDX5xyG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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2
80
40
20
020 40 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
60
TATC
4.0
2.0
1.0
3.0
0 60 140
TA
TC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0) BDX53B, BDX54B
BDX53C, BDX54C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
80
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0) BDX53B, BDX54B
(VCE = 50 Vdc, IB = 0) BDX53C, BDX54C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
0.5
0.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0) BDX53B, BDX54B
(VCB = 100 Vdc, IE = 0) BDX53C, BDX54C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
0.2
0.2
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
750
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
2.0
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BaseEmitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
2.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SmallSignal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDX53B, 53C
BDX54B, 54C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
300
200
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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3
Figure 2. Switching Time Test Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
3.0
0.7
0.5
0.3
0.2
0.05 0.2 0.3 0.7 3.0 10
td @ VBE(off) = 0 V
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
0.07
1.0 5.0
ts
tr
0.1
1.0
2.0
0.5 2.0 7.0
0
VCC
- 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25 ms
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8.0 V
V1
APPROX
-12 V
[ 8.0 k [ 120
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities
RB
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RqJC(t) = r(t) RqJC
RqJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
1.0
Figure 5. ActiveRegion Safe Operating Area
20
2.0
0.05
10 20 100
TJ = 150°C
0.2
5.0
0.5
IC
, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
30 70
1.0
0.1
dc
2.0 503.0 5.0 7.0
5.0 ms
1.0 ms
100 ms
BDX53B, BDX54B
BDX53C, BDX54C
CURVES APPLY BELOW RATED VCEO
0.02
500 ms
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) t 150°C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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4
10,000
1.0
Figure 6. Small-Signal Current Gain
f, FREQUENCY (kHz)
10 2.0 5.0 10 20 50 100 200 1000
500
300
100
5000
hFE, SMALL-SIGNAL CURRENT GAIN
20
3000
200
500
2000
1000
30
50
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
300
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 1.0 2.0 5.0 20 10010
C, CAPACITANCE (pF)
200
100
70
50
TJ = + 25°C
Cib
Cob
500.2 0.5
PNP
NPN
PNP
NPN
0.1
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 10
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 4.0 V
200 7.0
NPN
BDX53B, 53C
PNP
BDX54B, 54C
20,000
5000
10,000
3000
2000
1000
3.0 5.0 0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 10
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
200 7.0
20,000
5000
10,000
3000
2000
1000
3.0 5.0
VCE = 4.0 V
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A 6.0 A
1.0 0.7 2010
3.0
IB, BASE CURRENT (mA)
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A 6.0 A
1.0 0.7 2010
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 4.0 V
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
TJ = 25°C
0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
+5.0
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10
-55 to 150°C
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
qVB for VBE
*qVC for VCE(sat)
-55°C to 25°C
25°C to 150°C
25°C to 150°C
*IC/IB v hFE/3
0.5 0.7
+2.0
NPN
BDX53B, BDX53C
PNP
BDX54B, BDX54C
+5.0
IC, COLLECTOR CURRENT (AMP)
0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10
-55 to 150°C
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
qVB for VBE
*qVC for VCE(sat)
-55°C to 25°C
25°C to 150°C
25°C to 150°C
*IC/IB v hFE/3
0.5 0.7
+2.0
Figure 12. Collector CutOff Region
105
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECTOR CURRENT (A)μIC
10-1
+0.2 +0.40-0.2-0.4-0.6
VCE = 30 V
REVERSE FORWARD
103
104
+0.6 +0.8 +1.0 +1.2 + 1.4
TJ = 150°C
100°C
25°C
105
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECTOR CURRENT (A)μIC
10-1
-0.2 -0.40+0.2+0.4+0.6
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
103
104
-0.6 -0.8 -1.0 -1.2 -1.4
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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6
Figure 13. Darlington Schematic
NPN
BDX53B
BDX53C
PNP
BDX54B
BDX54C
BASE
COLLECTOR
EMITTER
[ 8.0 k [ 120
BASE
COLLECTOR
EMITTER
[ 8.0 k [ 120
ORDERING INFORMATION
Device Package Shipping
BDX53B TO220
50 Units / Rail
BDX53BG TO220
(PbFree)
BDX53C TO220
50 Units / Rail
BDX53CG TO220
(PbFree)
BDX54B TO220
50 Units / Rail
BDX54BG TO220
(PbFree)
BDX54C TO220
50 Units / Rail
BDX54CG TO220
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
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7
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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