ES1A THRU ES1J FRONTIER ELECTRONICS CO., LTD. 1A SURFACE MOUNT FAST EFFICIENT RECOVERY RECTIFIERS SOLDERING PAD CATHODE FEATURES ! FOR SURFACE MOUNTED APPLICATIONS ! LOW PROFILE PACKAGE ! BUILT-IN STRAIN RELIEF ! EASY PICK AND PLACE ! GLASS PASSIVATED CHIP JUNCTION ! PLASTIC MATERIAL USED CARRIES UNDERWRITERS LABORATORY CLASSIFICATION 94 V-0 ! HIGH TEMPERATURE SOLDERING250/10 SECONDS AT TERMINALS MECHANICAL DATA ! CASEMOLDED PLASTIC ! TERMINALSSOLDER PLATED ! POLARITYINDICATED BY CATHODE BAND ! WEIGHT0.064 GRAMS .087(2.2) .065(1.65) .040(1.25) .071(1.8) .177(4.5) .220(5.6) .192(4.9) .110(2.8) .090(2.3) .190(4.8) .157(4.0) .100(2.6) .080(2.0) .071(1.8) .035(0.9) .080(2.0) CASE : DO-214AC (SMA) DIMENSIONS IN INCHES AND (MILLIMETERS) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20% RATINGS MAXIMUM RECURRENT PEAK REVERSE VOLTAGE MAXIMUM RMS VOLTAGE MAXIMUM DC BLOCKING VOLTAGE MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT AT TL=90C MAXIMUM OVERLOAD SURGE 8.3ms SINGLE HALF SINEWAVE TYPICAL JUNCTION CAPACITANCE (NOTE 1) TYPICAL THERMAL RESISTANCE (NOTE 2) STORAGE TEMPERATURE RANGE OPERATING TEMPERATURE RANGE SYMBOL VRRM VRMS VDC ES1A 50 35 50 ES1B 100 70 100 ES1D 200 140 200 ES1E 300 210 300 ES1G 400 280 400 ES1J 600 420 600 UNITS V V V IO 1.0 A IFSM 30 A CJ JL TSTG TOP ELECTRICAL CHARACTERISTICS (AT TA =25C UNLESS OTHERWISE NOTED) CHARACTERISTICS SYMBOL ES1A MAXIMUM FORWARD VOLTAGE AT 1.0A AND 25 VF MAXIMUM REVERSE CURRENT AT 25 IR MAXIMUM REVERSE RECOVERY TIME (NOTE 3) TRR MARKING ES1A 15 10 ES1B 0.98 ES1D ES1E ES1G ES1J 1.75 ES1G ES1J 1.25 10 20 ES1B ES1D ES1E NOTE 1. MEASURED AT 1.0 MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 V 2. THERMAL RESISTANCE FROM JUNCTION TO TERMINAL 5.0mm2 (.013 mm THICK) LAND AREAS 3. REVERSE RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A 14-55 PF C/W 30 -55 TO + 150 -55 TO + 125 UNITS V A nS RATINGS AND CHARACTERISTIC CURVE ES1A THRU ES1J FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 100 NONINDUCTIVE FIG. 2-TYPICAL FORWARD CURRENT DERATING CURVE Trr (-) D.U.T. 2.0 +0.5A AVERAGE FORWARD CURRENT (A) 50 NONINDUCTIVE PULSE GENERATOR ( NOTE 2 ) (+) 25 Vdc (approx) 0 1 NON INDUCTIVE (-) OSCILLOSCOPE (+) -0.25A ( NOTE 1 ) NOTE: 1. RISETIME=7ns MAX. INPUT IMPEDANCE=1 MEGOHM 22PF 2. RISE TIME =10ns MAX. SOURCE IMPEDANCE=50 OHMS INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURENT (uA) 10 TJ=100oC 10 TJ=80oC 1.0 TJ=25oC 0.1 0.01 20 40 60 80 P.C.B MOUNTED ON 0.3x0.3"(8.0x8.0mm) COPPER PAD AREAS 0 25 50 75 100 125 150 LEAD TEMPERATURE (oC) SET TIME BASE FOR 10/20 ns/cm 100 0 1.0 1cm FIG. 3-TYPICAL REVERSE CHARACTERISTICS 100 120 140 Single Phase Half Wave 60 Hz Resistive or Inductive Load FIG. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS ES1A~ES1D 1.0 ES1E~ES1G .1 .01 ES1J .001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 6-TYPICAL JUNCTION CAPACITANCE FIG. 5-MAXIMUN NON-REPETITIVE FORWARD SURGE CURRENT 200 100 8.3 ms Single Half Sine Wave (JEDEC Method) 30 JUNCTION CAPACITANCE (pF) PEAK FORWARD SURGE CURRENT (A) 40 25 20 15 10 5 0 40 TJ=25oC ES1A~ES1D 20 10 6 4 ES1E~ES1J 2 1 1 5 10 20 50 100 .1 NUMBER OF CYCLES AT 60 Hz .2 .4 1.0 2 4 10 REVERSE VOLTAGE (V) 14-56 20 40 100