14-55
FRONTIER
ELECTRONICS CO., LTD.
1A SURFACE MOUNT FAST EFFICIENT RECOVERY RECTIFIERS
FEATURES
! FOR SURFACE MOUNTED APPLICATIONS
! LOW PROFILE PACKAGE
! BUILT-IN STRAIN RELIEF
! EASY PICK AND PLACE
! GLASS PASSIV ATED CHIP JUNCTION
! PLASTIC MATERIAL USED CARRIES UNDERWRITERS
LABORATORY CLASSIFICATION 94 V-0
! HIGH TE MPERATURE SOLDERING：250℃/10 SECONDS AT
TERMINALS
MECHANICAL DATA
! CASE：MOLDED PLASTIC
! TERMINALS：SOLDER PLATED
! P OLARITY：INDICATED BY CATHODE BAND
! WEIGHT：0.064 GRAMS CASE : DO-214AC (SMA)
DIMENSIONS IN INCHES AND (MILLIMETERS)
MAXIMUM RATINGS AND ELECTR ICAL CHARACTERIS T ICS
RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD.
FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS SYMBOL ES1A ES1B ES1D ES1E ES1G ES1J UNITS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE VRRM 50 100 200 300 400 600 V
MAXIMUM RMS VOLTAGE VRMS 35 70 140 210 280 420 V
MAXIMUM DC BLOCKING VOLTAGE VDC 50 100 200 300 400 600 V
MAXIMU M AV ERAGE FORWARD RECT IFIED CURRENT
AT TL=90°CIO1.0 A
MAXIMUM OVERLOAD SURGE 8.3ms SINGLE HALF SINE-
WAVE IFSM 30 A
TYPICAL JUNCTION CAPACITANCE (NOTE 1) CJ15 10 PF
TYPICAL THERMAL RESISTANCE (NOTE 2) θJL 30 °C/W
STORAGE TEMPERATURE RANGE TSTG -55 TO + 150 ℃
OP ERATING TEMPE RATURE RANGE TOP -55 TO + 125 ℃
ELECTRICAL CHARACTERISTICS (AT TA =25°
°°
°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS SYMBOL ES1A ES1B ES1D ES1E ES1G ES1J UNITS
MAXIMU M FO RWARD VOLTAGE AT 1 .0A AND 25℃VF0.98 1.25 1.75 V
MAXIMUM REVERSE CURRENT AT 25℃IR10 µA
MAXIMUM REVERSE RECOVERY TIME (NOTE 3) TRR 20 nS
MARKING ES1A ES1B ES1D ES1E ES1G ES1J
NOTE：
1. MEASURED AT 1.0 MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 V
2. THERMAL RESISTAN CE FROM JUNCTION TO TERMINAL 5.0mm2 (.013 mm THICK) LAND AREAS
3. REVERS E RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A
ES1A
THRU
ES1J
.220(5.6)
.192(4.9)
.190(4.8)
.157(4.0)
.071(1.8)
.035(0.9)
.110(2.8)
.090(2.3)
.080(2.0)
.100(2.6)
.080(2.0)
.065(1.65)
.040(1.25)
CATHODE
.177(4.5)
.071(1.8)
.087(2.2)
SOLDERING PAD
RATINGS AND CHARACTERISTIC CURVE ES1A THRU ES1J
FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
PULSE
GENERATOR
( NOTE 2 )
(+)
25 Vdc
(approx)
(-)
D.U.T.
1Ω
N
ON
INDUCTIVE OSCILLOSCOPE
( NOTE 1 )
50Ω
N
ONINDUCTIVE 100Ω
N
ONINDUCTIVE
(-)
(+)
+0.5A
0
-0.25A
Tr
r
FIG. 3-TYPICAL REVERSE CHARACTE RISTICS FIG. 4-TYPICAL INSTANT ANEOUS
F
O
R
W
ARD
C
HARA
C
TERI
S
TI
CS
FIG. 6-TYPICAL J UNCTION CAPACITANCE
FIG. 5-MAXIMUN NON-REP ETITIVE
FORWARD SURGE CURRENT
40
30
25
20
15
10
5
0 1 5 10 20 50 100
NUMBER OF CYCLES AT 60 Hz .1 .2 .4 1.0 2 4 10 20 40 100
REVER S E VOLTAGE (V)
200
100
40
20
10
6
4
2
1
JUNCTION CAPACITANCE (pF)
PEAK FORWARD SURGE CURRENT
(
A
)
8.3 ms Single Half Sine Wave
(JEDEC Method)
T
J
=25oC
0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE (V)
0 20 40 60 80 100 120 140
TJ=25oC
TJ=80oC
TJ=100oCES1A~ES1D
ES1J
10
1.0
.1
.01
.001
INSTANTANEOUS FORWARD CURR ENT (A)
INSTANTANEOUS REVERSE C URENT (uA)
AVERAGE FOR W ARD
CURRENT
(
A
)
2.0
1.0
0 25 50 7
5
10
0
12
5
15
0
LEAD TEMPERATURE (oC)
FIG. 2- TYPICAL FORWARD
CURRENT DERATING CURVE
Single Phas e Half
Wave 60 Hz Resistive
or Inductive Load
1cm
SET TIME BASE
FOR 10/20 ns/cm
N
OTE: 1. RISETIME=7ns MAX. INPUT
IMPEDANCE=1 MEGOHM 22PF
2. RISE TIME =10ns MAX. SOURCE
IMPEDANCE=50 OHMS
ES1E~ES1
G
100
10
1.0
0.1
0.01
ES1A~ES1D
ES1E~ES1J
PERCE NT OF RATED PEAK REVERSE VOLTAGE (%)
14-56
P.C.B MOUNT E D ON
0.3×0.3”(8.0×8.0mm)
COPPER PAD AREAS
