SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.165 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V I-PAK 2 Lower RDS(ON) : 0.124 (Typ.) 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage Value o ID Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt 1 O 28 + _ 20 A O 1 O 1 O O3 55 mJ 8 A 2 o Total Power Dissipation (TC=25 C) Linear Derating Factor TL A 5 o Total Power Dissipation (TA=25 C) * TJ , TSTG V 8 o IDM PD Units 60 Operating Junction and V 1.8 mJ 5.5 V/ns 2.5 W 18 W 0.14 W/ C o - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8" from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RJC Junction-to-Case -- 6.73 RJA Junction-to-Ambient * -- 50 RJA Junction-to-Ambient -- 110 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B (c)1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET SSR/U3055LA Electrical Characteristics (TC=25oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage BV/TJ Breakdown Voltage Temp. Coeff. VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units 60 -- --- 1.0 -- 2.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.165 VGS=5V,ID=4A 4 O VDS=30V,ID=4A 4 O Gate Threshold Voltage Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- 4.7 -- Ciss Input Capacitance -- 265 345 Coss Output Capacitance -- 100 115 Crss Reverse Transfer Capacitance -- 37 45 td(on) Turn-On Delay Time -- 10 30 Rise Time -- 16 45 Turn-Off Delay Time -- 21 55 Fall Time -- 15 40 Qg Total Gate Charge -- 7.2 10 Qgs Gate-Source Charge -- 2.6 -- Qgd Gate-Drain( "Miller" ) Charge -- 3.2 -- tf See Fig 7 0.046 Forward Transconductance td(off) VGS=0V,ID=250A o V/ C ID=250A -- gfs tr V Test Condition V nA A pF VDS=5V,ID=250A VGS=20V VGS=--20V VDS=60V o VDS=48V,TC=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=30V,ID=10A, ns RG=12 See Fig 13 4 O 5 O VDS=48V,VGS=5V, nC ID=10A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- ISM Pulsed-Source Current 1 O -- -- 28 VSD Diode Forward Voltage O -- -- 1.5 V TJ=25 C,IS=8A,VGS=0V trr Reverse Recovery Time -- 50 -- ns TJ=25 C,IF=10A Qrr Reverse Recovery Charge -- 0.075 -- C diF/dt=100A/s 4 8 A Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=1mH, I AS=8A, V DD=25V, R G=27, Starting T J =25 C O o _ < _ _ < < T J =25 C O3 ISD 10A, di/dt 200A/s, VDD BVDSS , Starting _ 2% 4 Pulse Test : Pulse Width = 250 s, Duty Cycle < O Essentially Independent of Operating Temperature 5 O Integral reverse pn-diode in the MOSFET o o 4 O N-CHANNEL POWER MOSFET SSR/U3055LA Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS 101 ID , Drain Current ID , Drain Current 101 [A] 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V [A] Top : @ Notes : 1. 250 s Pulse Test 2. TC = 25 oC 100 10-1 100 150 oC 100 25 oC 3. 250 s Pulse Test 10-1 101 0 2 [A] 0.25 VGS = 5 V 0.15 0.10 VGS = 10 V 0.05 @ Note : TJ = 25 oC 8 10 101 100 @ Notes : 1. VGS = 0 V 150 oC 2. 250 s Pulse Test 25 oC -1 0.00 0 10 20 30 40 10 0.4 ID , Drain Current [A] C iss Coss= Cds+ Cgd 300 @ Notes : 1. VGS = 0 V C rss 2. f = 1 MHz 100 0 100 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Fig 6. Gate Charge vs. Gate-Source Voltage 6 Crss= Cgd C oss 200 0.8 [V] Fig 5. Capacitance vs. Drain-Source Voltage Ciss= Cgs+ Cgd ( Cds= shorted ) 400 0.6 VSD , Source-Drain Voltage [V] 101 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage 500 [pF] 6 Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current RDS(on) , [ ] Drain-Source On-Resistance Fig 3. On-Resistance vs. Drain Current Capacitance 4 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] 0.20 @ Notes : 1. VGS = 0 V 2. VDS = 30 V - 55 oC VDS = 12 V VDS = 30 V VDS = 48 V 4 2 @ Notes : ID =10 A 0 0 2 4 6 QG , Total Gate Charge [nC] 8 N-CHANNEL POWER MOSFET 1.2 Fig 7. Breakdown Voltage vs. Temperature RDS(on) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage SSR/U3055LA 1.1 1.0 0.9 @ Notes : 1. VGS = 0 V Fig 8. On-Resistance vs. Temperature 2.0 1.5 1.0 @ Notes : 1. VGS = 5 V 2. ID = 250 A 0.8 -75 -50 -25 0 25 50 75 100 125 150 2. ID = 4.8 A 0.5 -75 175 -50 o 50 75 100 125 150 175 [A] ID , Drain Current 0.1 ms 1 ms 10 ms 100 25 Fig 10. Max. Drain Current vs. Case Temperature 101 DC @ Notes : 1. TC = 25 oC 0 10 Operation in This Area is Limited by R DS(on) 2. TJ = 150 oC 8 6 4 2 3. Single Pulse 10-1 100 101 0 25 102 50 75 100 Tc , Case Temperature [ oC] VDS , Drain-Source Voltage [V] Fig 11. Thermal Response Thermal Response 101 Z JC(t) , ID , Drain Current [A] Fig 9. Max. Safe Operating Area 102 -25 TJ , Junction Temperature [ oC] TJ , Junction Temperature [ C] D=0.5 0.2 100 @ Notes : 1. Z J C (t)=6.73 0.1 o C/W Max. 2. Duty Factor, D=t1 /t2 0.05 3. TJ M -TC =PD M *Z J C (t) 0.02 0.01 PDM t1 single pulse 10- 1 10- 5 t2 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 125 150 N-CHANNEL POWER MOSFET SSR/U3055LA Fig 12. Gate Charge Test Circuit & Waveform " Current Regulator " 50K 12V VGS Same Type as DUT Qg 200nF 5V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 5V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 5V tp tp Time N-CHANNEL POWER MOSFET SSR/U3055LA Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by "RG" * IS controlled by Duty Factor "D" Gate Pulse Width D = -------------------------Gate Pulse Period 5V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.