2010-06-22
Page 1
Rev. 1.5BSP123
SIPMOS Small-Signal-Transistor Product Summary
VDS 100 V
RDS(on) 6Ω
ID0.37 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
PG-SOT223
Marking
BSP123
Type Package Tape and Reel Information
BSP123 PG-SOT223 L6433: 4000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.37
0.3
A
Pulsed drain current
TA=25°C
ID puls 1.48
Reverse diode dv/dt
IS=0.37A, VDS=80V, di/dt=200A/µs, Tjmax=150°C
dv/dt6kV/µs
Gate source voltage VGS ±20 V
ESD Class JESD22-A114-HBM 0 (<250V)
Power dissipation
TA=25°C
Ptot 1.79 W
Operating and storage temperature Tj , Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Pb-free lead plating; RoHS compliant
•
BSP123BSP123 PG-SOT223 L6327: 1000 pcs/reel
• Qualified according to AEC Q101
Packaging
BSP123
Non dry
Non dry
2010-06-22
Page 2
Rev. 1.5BSP123
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
RthJS -15 25 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
100
51
115
70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
V(BR)DSS 100 - - V
Gate threshold voltage, VGS = VDS
ID=50µA
VGS(th) 0.8 1.4 1.8
Zero gate voltage drain current
VDS=100V, VGS=0, Tj=25°C
VDS=100V, VGS=0, Tj=150°C
IDSS
-
-
-
-
0.01
5
µA
Gate-source leakage current
VGS=20V, VDS=0
IGSS - - 10 nA
Drain-source on-state resistance
VGS=2.8V, ID=15mA
RDS(on) -14 30 Ω
Drain-source on-state resistance
VGS=4.5V, ID=0.3A
RDS(on) -4.8 10
Drain-source on-state resistance
VGS=10V, ID=0.37A
RDS(on) -3.5 6
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2010-06-22
Page 3
Rev. 1.5BSP123
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=0.3A
0.13 0.27 -S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
-56 70 pF
Output capacitance Coss -911.3
Reverse transfer capacitance Crss -3.5 4.4
Turn-on delay time td(on) VDD=50V, VGS=10V,
ID=0.37A, RG=6Ω
-3.3 5ns
Rise time tr-3.2 4.8
Turn-off delay time td(off) -8.7 13
Fall time t
f
-9.4 14
Gate Charge Characteristics
Gate to source charge Qgs VDD=80V, ID=0.37A -0.09 0.13 nC
Gate to drain charge Qgd -0.8 1.2
Gate charge total QgVDD=80V, ID=0.37A,
VGS=0 to 10V
-1.6 2.4
Gate plateau voltage V(plateau) VDD=80V, ID = 0.37 A -3.61 -V
Reverse Diode
Inverse diode continuous
forward current
ISTA=25°C - - 0.37 A
Inv. diode direct current, pulsedISM - - 1.48
Inverse diode forward voltage VSD VGS=0, IF = IS-0.9 1.2 V
Reverse recovery time trr VR=50V, IF=lS,
diF/dt=100A/µs
-52.7 79 ns
Reverse recovery charge Qrr -17.8 27 nC
2010-06-2
Page 4
Rev. 1.5BSP123
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9 BSP123
Ptot
2 Drain current
ID = f (TA)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 °C 160
TA
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
A
0.4 BSP123
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 0 10 1 10 2 10 3
V
VDS
-2
10
-1
10
0
10
1
10
A
BSP123
ID
R DS(on) = V DS / I
D
DC
tp = 21.0ms
4 Transient thermal impedance
ZthJA = f (tp)
parameter : D = tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSP123
ZthJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2010-06-22
Page 5
Rev. 1.5BSP123
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
00.5 11.5 22.5 33.5 4V5
VDS
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
A
0.7
ID
10V
5V
4.5V
4.1V
3.9V
3.7V
3.5V
3.1V
2.9V
2.3V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
00.1 0.2 0.3 0.4 0.5 A0.7
ID
0
2
4
6
8
10
12
14
16
Ω
20
RDS(on)
2.3V
2.9V
3.1V
3.5V
3.7V
3.9V
4.1V
4.5V
5.0V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
00.5 11.5 22.5 33.5 4V5
VGS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
00.1 0.2 0.3 0.4 0.5 A0.7
ID
0
0.05
0.1
0.15
0.2
0.25
0.3
S
0.4
gfs
2010-06-22
Page 6
Rev. 1.5BSP123
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.37 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
2
4
6
8
10
12
14
16
18
20
Ω
24 BSP123
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS; ID =50µA
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
2.2
VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
0 4 8 12 16 20 24 28 V36
VDS
0
10
1
10
2
10
3
10
pF
C
Crss
Ciss
Coss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
00.4 0.8 1.2 1.6 22.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
BSP123
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2010-06-22
Page 7
Rev. 1.5BSP123
13 Typ. gate charge
VGS = f (QG); parameter: VDS ,
ID = 0.37 A pulsed, Tj = 25 °C
00.4 0.8 1.2 1.6 2nC 2.8
QG
0
2
4
6
8
10
12
V
16 BSP123
VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
BSP123
V(BR)DSS
2010-06-22
Page 8
Rev. 1.5BSP123
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rig hts Reserved.
Legal Disclaimer
The information giv e n in this doc ume nt shall in no ev ent b e r e garded as a guar antee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated here in and/or any inf o r mation re gar d ing the ap plication of the device,
Infineo n Technolo g ies hereby disclaims any and all war ranties and liabilities o f any k ind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon T echnologies Office (www.infineon.com).
Warnings
Due to technical req uirements, components may contain dangerous substances. For infor mation
on the types in question, please contact the nearest Infineon Technologies Of f ice.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implante d in the human body or to support and/or maintain and sustain
and/or p rotect human life. If they f ail, it is r e as onable to as s ume that the health of the user
or other persons may be endangered.
