APTC60AM42F2G Phase leg Super Junction MOSFET Power Module VDSS = 600V RDSon = 42m max @ Tj = 25C ID = 66A @ Tc = 25C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 16 15 14 13 12 11 17 18 10 9 Features CoolMOSTM - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged - Fast intrinsic diode Very low stray inductance Kelvin source for easy drive High level of integration 1 2 3 4 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant 5 6 7 8 Pins 1/2/3/4 ; 5/6/7/8 ; 11/12/13/14/15/16 must be shorted together All ratings @ Tj = 25C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 600 66 49 200 20 42 416 20 1 1800 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC60AM42F2G - Rev 1 October, 2012 Symbol VDSS APTC60AM42F2G Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 10V, ID = 33A VGS = VDS, ID = 6mA VGS = 20 V, VDS = 0V Min Typ 3 4 Min Typ 14.6 3.47 0.082 Max 100 42 5 200 Unit A m V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz nF 510 VGS = 10V VBus = 300V ID = 66A nC 86 270 21 Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 66A RG = 2.5 Inductive switching VGS = 15V ; ID = 66A VBus=400V ; RG=2.5 30 ns 240 52 Tj = 25C 1.18 Tj = 125C 1.45 mJ 0.3 C/W Max Unit Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25C Tc = 80C Typ 66 49 VGS = 0V, IS = - 66A IS = - 66A VR = 400V diS/dt = 200A/s A 1.2 40 V V/ns Tj = 125C 350 ns Tj =125C 5.4 C Thermal and package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2 Typ Max 150 125 100 3 75 www.microsemi.com Unit V C N.m g 2-6 APTC60AM42F2G - Rev 1 October, 2012 Symbol VISOL TJ TSTG TC Torque Wt APTC60AM42F2G SP2 Package outline (dimensions in mm) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 160 VGS=15&10V 100 ID, Drain Current (A) 6.5V 80 60 6V 40 5.5V 20 120 80 TJ=125C 40 TJ=125C TJ=25C 0 0 0 1 2 3 4 5 VDS, Drain to Source Voltage (V) 6 0 Normalized to VGS=10V @ 33A 1.15 VGS=10V 1.1 1.05 1 2 4 6 8 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 70 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle VGS=20V 0.95 0.9 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 25 ID, Drain Current (A) www.microsemi.com 50 75 100 125 TC, Case Temperature (C) 150 3-6 APTC60AM42F2G - Rev 1 October, 2012 ID, Drain Current (A) 120 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (C) 1000 0.95 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.00 0.90 0.85 0.80 0.75 limited by RDSon 100 s 100 10 0.70 1 ms Single pulse TJ=150C TC=25C 10 ms 1 25 50 75 100 125 150 1 100 1000 10000 Coss 1000 100 Crss 10 1 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss 0 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (C) C, Capacitance (pF) VGS=10V ID= 33A 2.5 14 ID=66A TJ=25C 12 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 0 100 200 300 400 Gate Charge (nC) 500 600 4-6 APTC60AM42F2G - Rev 1 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60AM42F2G APTC60AM42F2G Delay Times vs Current 300 VDS=400V RG=2.5 TJ=125C L=100H td(off) 250 80 200 tr and tf (ns) VDS=400V RG=2.5 TJ=125C L=100H 150 100 50 0 20 40 60 80 40 tr 100 0 120 0 20 ID, Drain Current (A) Eoff 1.5 1 0.5 0 100 120 VDS=400V ID=66A TJ=125C L=100H 6 Eoff 4 2 0 0 20 40 60 80 100 ID, Drain Current (A) 120 0 IDR, Reverse Drain Current (A) ZVS 300 VDS=400V D=50% RG=2.5 TJ=125C TC=75C 200 100 0 25 30 35 40 45 50 ID, Drain Current (A) 55 10 15 20 25 Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 400 5 Gate Resistance (Ohms) 500 Frequency (kHz) 80 Switching Energy vs Gate Resistance Switching Energy (mJ) Switching Energy (mJ) 2 60 8 VDS=400V RG=2.5 TJ=125C L=100H 2.5 40 ID, Drain Current (A) Switching Energy vs Current 3 tf 20 td(on) 0 60 TJ=150C 100 TJ=25C 10 60 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". www.microsemi.com 5-6 APTC60AM42F2G - Rev 1 October, 2012 td(on) and td(off) (ns) Rise and Fall times vs Current 100 APTC60AM42F2G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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