APTC60AM42F2G
APTC60AM42F2G – Rev 1 October, 2012
www.microsemi.com 1-6
1
2
3
4
18
10 9 6
8
7
13
16
14
15
12
17
11 5
Pins 1/2/3/4 ; 5/6/7/8 ; 11/12/13/14/15/16 must be
shorted together
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 600 V
Tc = 25°C 66
ID Continuous Drain Current Tc = 80°C 49
IDM Pulsed Drain current 200
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 42 m
PD Maximum Power Dissipation Tc = 25°C 416 W
IAR Avalanche current (repetitive and non repetitive) 20 A
EAR Repetitive Avalanche Energy 1
EAS Single Pulse Avalanche Energy 1800 mJ
VDSS = 600V
RDSon = 42m max @ Tj = 25°C
ID = 66A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
- Fast intrinsic diode
Very low stray inductance
Kelvin source for easy drive
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Phase leg
Super Junction MOSFET
Power Module
APTC60AM42F2G
APTC60AM42F2G – Rev 1 October, 2012
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Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V 100 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 33A 42
m
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 3 4 5 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 14.6
Coss Output Capacitance 3.47
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.082
nF
Qg Total gate Charge 510
Qgs Gate – Source Charge 86
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 66A 270
nC
Td(on) Turn-on Delay Time 21
Tr Rise Time 30
Td(off) Turn-off Delay Time 240
Tf Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 66A
RG = 2.5 52
ns
Tj = 25°C 1.18
Eoff Turn-off Switching Energy
Inductive switching
VGS = 15V ; ID = 66A
VBus=400V ; RG=2.5Ω Tj = 125°C 1.45
mJ
RthJC Junction to Case Thermal Resistance 0.3
°C/W
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C 66
IS Continuous Source current
(Body diode)
Tc = 80°C 49 A
VSD Diode Forward Voltage VGS = 0V, IS = - 66A 1.2 V
dv/dt Peak Diode Recovery 40 V/ns
trr Reverse Recovery Time Tj = 125°C 350 ns
Qrr Reverse Recovery Charge
IS = - 66A
VR = 400V
diS/dt = 200A/µs Tj =125°C 5.4 µC
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 75 g
APTC60AM42F2G
APTC60AM42F2G – Rev 1 October, 2012
www.microsemi.com 3-6
SP2 Package outline (dimensions in mm)
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
0
20
40
60
80
100
120
0123456
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
V
GS
=15&10V
Low Voltage Output Characteristics Transfert Characteristics
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
40
80
120
160
0246810
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty
cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
0 20 40 60 80 100 120 140 160
I
D
, Drain Current (A)
R
DS
(on) Drain to Source ON Resistance
Normalized to
V
GS
=10V @ 33A
0
10
20
30
40
50
60
70
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTC60AM42F2G
APTC60AM42F2G – Rev 1 October, 2012
www.microsemi.com 4-6
0.8
0.9
1.0
1.1
1.2
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
V
GS
=10V
I
D
= 33A
Threshold Voltage vs Temperature
0.70
0.75
0.80
0.85
0.90
0.95
1.00
25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10 ms
1 ms
100 µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited b
y
R
DS
on
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
V
DS
=120V
V
DS
=300V
V
DS
=480V
0
2
4
6
8
10
12
14
0 100 200 300 400 500 600
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=66A
TJ=25°C
APTC60AM42F2G
APTC60AM42F2G – Rev 1 October, 2012
www.microsemi.com 5-6
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.30.50.70.91.11.31.5
V
SD
, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
0 20 40 60 80 100 120
I
D
, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
0 20 40 60 80 100 120
I
D
, Drain Current (A)
t
r
and t
f
(ns)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH
Switching Energy vs Current
E
off
0
0.5
1
1.5
2
2.5
3
0 20406080100120
I
D
, Drain Current (A)
Switching Energy (mJ)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH E
off
0
2
4
6
8
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
V
DS
=400V
I
D
=66A
T
J
=125°C
L=100µH
ZVS
0
100
200
300
400
500
25 30 35 40 45 50 55 60
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=400V
D=50%
R
G
=2.5Ω
T
J
=125°C
T
C
=75°C
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APTC60AM42F2G
APTC60AM42F2G – Rev 1 October, 2012
www.microsemi.com 6-6
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