DN05067/D Utilizing GaN HEMTs in an AllinOne Workstation Power Supply www.onsemi.com DESIGN NOTE Introduction The all-in-one workstation is getting sleeker and lighter with every new model. One of the key enablers to this trend is lighter and small form-factor power converter which is typically achieved by switching the power converter at a high frequency. High frequency switching leads to smaller and lighter passive components such as transformers, inductors and capacitors. A key impediment for high switching frequency operation is the switching & driving losses of the traditional silicon MOSFETs. GaN HEMTs (Gallium Nitride-High Electron Mobility Transistor) offer low gate charge and on-resistance compared to the traditional MOSFETs enabling high frequency power conversion. GaN HEMTs switch very fast and the resulting dv/dt is high. Therefore, it requires special probing techniques that are highlighted towards the end of this application note. This application note describes the performance of a 12 V/20 A all-in-one computer power supply using GaN HEMTs as the switching devices. The front-end of the power converter converts a universal AC line to a 385 DC bus while achieving near unity power factor. The second stage is a DC-DC stage that converts the 385 V DC bus to a 12 V output with a max rated load current of 20 A. Power Converter Specifications The demo board has been designed as a universal input 240 watt board. It produces a 12 volt dc output voltage, at up to 20 A load current. The power factor is greater than 98% at low line and the T.H.D is less than 17% at full load. Table 1 list out all the specifications. Table 1. DEMO BOARD SPECIFICATIONS Min Max Unit Input Voltage (ac) Requirement 90 265 V Output Voltage (dc) - 12 V Output Current(dc) 0 20 A Output Power 0 240 W Power Factor - > 98 % Overview of the Architecture using a resonant topology popularly known as LLC topology. Synchronous rectifiers are used on the secondary for higher efficiency. The LLC power converter employs ON Semiconductor's NCP1397 while the synchronous rectifier driver is NCP4304. The NCP432 is utilized in the feedback path to regulate the output voltage. The board utilizes GaN HEMTs from Transphorm Inc. as the switching devices in both the PFC stage and in the primary side of the LLC stage. An overview of the architecture is shown in the Figure 1 below. The front-end converts the AC into a regulated 385 V DC bus. This is achieved using a power factor correction (PFC) IC employing a topology. The inductor current in the boost converter works in CCM (Continuous Conduction Mode). The Boost PFC stage employs ON Semiconductor's NCP1654 controller. The second stage is an isolated DC-DC converter that converts the 385 V DC bus to a 12 V dc voltage output. The isolated DC-DC conversion is achieved (c) Semiconductor Components Industries, LLC, 2016 September, 2016 - Rev. 1 1 Publication Order Number: DN05067/D DN05067/D D1 D3 Boost Converter Using NCP1654 EMI Filter D2 D4 LCC Converter with Sync. Rectifiers Using NCP1397 and NCP4304 LOAD AC Source + Figure 1. Block Diagram of the Demo Board D GaN HEMTs The demonstration board uses TPH3002PS GaN based switches from Transphorm Inc. The TPH3002PS includes a GaN HEMT and a low-voltage, low Rds(on) silicon FET in a cascode structure as shown in the figure. Therefore, the control terminal aka gate is that of a standard silicon FET. These devices have a low Rds(on), and high dv/dt. Traditional silicon has a dv/dt of less than 50 V/ns while TPH3002PS has a dv/dt of > 100 V/ns. These factors result in low switching and conduction losses. TPH3002PS has low Qrr which result in minimal reverse recovery losses. Some of the parameters of TPH3002PS are given in the Table 2. G Figure 2. Cascaded GaN HEMT and Low Voltage Silicon FET Table 2. TPH3002PS PARAMETERS [6] S. No Parameter Value Unit Conditions 1 Rds(on) 0.29 mW Id = 9 A Continuous Current 2 Qg 6.2 nC 3 Qrr 29 nC 4 Eoss 3.1 mJ PFC Circuit Description 1. Programmable Overcurrent Protection 2. Brownout Detection 3. Overvoltage Protection 4. Soft Start 5. Continuous Conduction Mode 6. Average Current-Mode or Peak Current-Mode Operation 7. Programmable Overpower Limitation 8. Under voltage Detection for Open Loop Detection (shutdown) 9. Inrush Currents Detection As explained earlier, the inductor current in the boost PFC is in CCM. The CCM operation results in lower peak and RMS currents compared to Critical Conduction Mode (CrM). The CrM operation brings in a number of other benefits but is typically employed at lower power levels. The CCM operation greatly simplifies the design of the boost inductor and reduces the stress on the boost FET and boost diode. Also, the CCM boost works in fixed frequency simplifying the EMI filter design. NCP1654 is a simplified CCM boost PFC converter in an 8-pin package that minimizes the number of external components. Figure 3 below show a typical application circuit of the NCP1654 based PFC [1]. Salient features NCP1654 provides are mentioned below: www.onsemi.com 2 DN05067/D TB2 1 2 390 V C4 180 mF, 450 V + D1 TB2 1 MSR680G 2 SPP20N60S5 R1 1.8 MW R2 C8 + +15 V Q1 R4 1N4148 10 kW D2 1.8 MW C9 22 mF 0.1 mF C10 R5 10 W 100 pF 8 VCONTROL R12 12 kW C12 2.2 mF C5 5 NCP1654 IC1 0.1 W 2 2 VM GND 1 3 4 BO R6 6 CS 650 mH L1 7 FB 5 VCC DRV R3 23.2 kW R7 R8 47 kW C6 1 nF 3.6 kW C3 0.1 mF GBU8J 600 V 8A R9 R13 R10 R11 3.3 MW 3.3 MW 0W 82.5 kW C7 0.47 mF DB1 C2 0.47 mF L2 2 x 6.8 mH 150 mH L3 C1 0.47 mF 5 A Fuse F1 1 2 L AC Inlet 3 N TB1 Note: The design table of PFC circuit is given in [6]. Figure 3. Typical Application Circuit of NCP1654 Based PFC Circuit www.onsemi.com 3 220 nF DN05067/D LLC Circuit Description resonant inductance in lieu of an extra discrete inductor. The LLC stage design is based on NCP1397 and NCP4304B and is explained in AND8460/D [4]. A typical application circuit of NCP1397 is shown in Figure 4 [2] The LLC power converter is a variant of a series resonant converter. The abbreviation LLC comes from the fact that this converter utilizes two inductors (LMagnetizing and LResonant) and a capacitor (C) to form a resonant circuit. Typically, the leakage of the transformer acts as extra the Figure 4. Typical Application Circuit of NCP1397 www.onsemi.com 4 DN05067/D compensation. Typical application circuit of the NCP4304 is given in Figure 5 [3]. Some of its salient features are: 1. Precise True Secondary Zero Current Detection with Adjustable Threshold 2. Automatic Parasitic Inductance Compensation 3. Typically 40 ns Turn off Delay from Current Sense Input to Driver 4. Zero Current Detection Pin Capability up to 200 V 5. Optional Ultrafast Trigger Input 6. Disable Input 7. Adjustable Minimum ON Time and Minimum OFF Time 8. 5 A/2.5 A Peak Current Sink/Source Drive Capability 9. Operating Voltage Range up to 30 V Following are the salient features of the NCP1397: 1. Adjustable minimum switching frequency with 3% accuracy 2. Brown-out input 3. 1 A/0.5 A Peak Current Sink/Source Drive 4. Timer-based OCP input with auto-recovery 5. Second latched OCP level 6. Adjustable dead time from 100 ns to 2 ms 7. Adjustable soft-start To achieve better efficiency, synchronous rectifiers are used on the secondary of the LLC converter. The NCP4304 SR [3] controller is utilized for the control of secondary side FETs. NCP4304 is a proprietary SR controller from ON Semiconductor which provides true secondary zero current detection and automatic parasitic inductance NCP4304 RMIN_TOFF RMIN_TON C2 VCC DRV MIN_TOFF GND MIN_TON COMP TRIG/DIS CS +Vbulk +Vout TR1 M1 N2 M3 + C4 LLC STAGE CONTROL RTN N1 M2 N3 C1 M4 NCP4304 RMIN_TOFF RMIN_TON DRV VCC GND MIN_TOFF MIN_TON COMP CS TRIG/DIS C3 D1 OK1 Figure 5. Typical Application Circuit of NCP4304B Performance Efficiency, Power factor and THD were measured at low line and high line input voltages. Chroma programmable AC source 61604, Chroma power meter 66202 and Chroma electronic load 63107 were used for the measurement purpose. Table 3 and 4 show the T.H.D and Power Factor data at low and high line respectively. The graphs below show the efficiency of the boost converter, LLC converter and the complete board. www.onsemi.com 5 DN05067/D P.F.C Table 3. T.H.D. AND POWER FACTOR AT 115 V 60 HZ INPUT 115 V AC Input S. No Output Voltage Output Current T.H.D Power Factor 1 12.062 4.997 18.537 0.9705 2 12.053 9.9663 11.62 0.9837 3 12.06 14.95 8.8442 0.9877 4 12.04 19.94 7.8168 0.9892 Table 4. T.H.D. AND POWER FACTOR AT 230 V 50 HZ INPUT 230 V AC Input S. No Output Voltage Output Current T.H.D Power Factor 1 12.055 4.9975 19.936 0.9216 2 12.047 9.965 13.961 0.9659 3 12.04 14.953 13.594 0.9714 4 12.037 19.94 12.472 0.9737 Figure 6. Inductor Current vs. Input Current www.onsemi.com 6 DN05067/D Figure 7. Inductor Current Figure 8. Boost Converter Efficiency www.onsemi.com 7 DN05067/D LLC Figure 9. LLC Inductor Current vs. Node Voltage (20 A Load) Figure 10. LLC Inductor Current vs. Node Voltage (10 A Load) www.onsemi.com 8 DN05067/D Figure 11. LLC Converter Efficiency Board Efficiency Figure 12. Complete Board Efficiency www.onsemi.com 9 DN05067/D EMI Performance EMI performance of the board was measured using spectrum analyzer and LISN. The board passes EN55022B standard. The results are shown below. Figure 13. Conducted Emission Results as per EN55022 Surge Test The board passed surge test at 2.2 kV at common mode and 1.1 kV differential mode settings. www.onsemi.com 10 DN05067/D Complete Schematic Complete schematic of the board is shown in the figures below. Figure 14. Complete Schematic (Page 1) www.onsemi.com 11 DN05067/D Figure 15. Complete Schematic (Page 2) www.onsemi.com 12 DN05067/D Bill of Material Table 5. BILL OF MATERIAL Items Qty. Reference Part Description 1 2 2 C1, C53 CAP., X7R, 2.2 nF, 16 V, 10%, 0603 AVX, 0603YC222KAT2A 6 C2, C9, C28, C32, C34, C52 CAP., X7R, 1 mF, 16 V, 10%, 0603 Taiyo Yuden, EMK107B7105KA-T 3 1 C3 CAP., X7R, 1.5 nF, 16 V, 10%, 0603 Kemet, C0603C152K4RACTU 4 1 C4 CAP., X5R, 2.2 mF, 16 V, 10%, 0603 TDK, C1608X5R1C225K080AB 5 1 C5 CAP., NP0, 100 pF, 50 V, 5%, 0603 AVX, C1608C0G1H101J080AA 6 3 C6, C7, C8 CAP., NP0, 4.7 nF, 630 V, 5%, 1206 TDK, C3216C0G2J472J085AA 7 2 C10 CAP., Film, 0.22 mF, 630 V, 20%, 7 x 15 x 17.5 (mm) Vishay, BFC233820224 8 3 CY1, CY2, CY4 CAP., X1Y2, 4.7 nF, 250 VAC, 20%, Rad. Kemet, C947U472MYVDBA7317 9 2 C13, C71 CAP., Alum., 120 mF, 450 V, 20%, Rad. 18 x 33.5 (mm) Rubycon, 450QXW120MEFC18X31.5 10 2 C14, C18 CAP., Alum., 3.3 mF, 400 V, 20%, E3.5-8 Rubycon, 400LLE3R3MEFC8X11R5 11 5 C15, C16, C23, C24, C25 CAP., X7R, 0.1 mF, 630 V, 10%, 1812 TDK, C4532X7R2J104K230KA 12 7 C17, C19, C27, C30, C33, C35, C37 CAP., X7R, 0.1 mF, 25 V, 10%, 0603 Kemet, C0603C104K3RACTU 13 1 C20 CAP., X7R, 0.1 mF, 25 V, 10%, 1206 Kemet, C1206F104K3RACTU 14 2 C21, C29 CAP., X5R, 10 mF, 16 V, 20%, 0805 Kemet, C0805C106M4PACTU 15 2 C22, C61 CAP., Alum., 100 mF, 16 V, 20%, Rad. 5 x 2 (mm) Rubycon, 16PX100MEFCTA5X11 16 1 C26 CAP., Poly. Alum., 470 mF, 16 V, 20%, E3.5-8 Nichicon, PLG1C471MDO1 17 3 C31, C50, C59 CAP., X5R, 4.7 mF, 16 V, 10%, 0805 Kemet, C0805C475K4PACTU 18 1 C36 CAP., X7R, 68 nF, 16 V, 10%, 0603 Yageo, CC0603KRX7R7BB683 19 3 C38, C47, C70 CAP., Alum., 820 mF, 16 V, 20%, E5-10.5 Panasonic, EEU-FC1C821 20 1 C39 CAP., Alum., 680 mF, 16 V, 20%, E3.5-8 Panasonic, EEU-FC1C681L 21 8 C40, C41, C42, C43, C55, C56, C62, C63 CAP., X5R, 100 mF, 16 V, 20%, 1210 Taiyo Yuden, EMK325ABJ107MM-T 22 1 C44 CAP., Film, 22 nF, 1 kV, 5%, 26 x 6.5 (mm) Kemet, PHE450PD5220JR06L2 23 2 C45, C46 CAP., NP0, 330 pF, 50 V, 5%, 0805 Kemet, C0805C331J5GACTU 24 1 C51 CAP., X7R, 10 nF, 16 V, 10%, 0603 TDK, CGJ3E2X7R1C103K080AA 25 1 C54 CAP., X7R, 1 nF, 16 V, 5%, 0603 Kemet, C0603C102J4RACTU 26 2 C57, C58 CAP., NP0, 10nF, 630V, 5%, 1206 TDK, C3216C0G2J103J160AA 27 2 CX1, CX2 CAP., Film, 0.47 mF, 630 V DC, 20%, 10 x 16.5 x 17.5 (mm) Vishay, BFC233920474 28 1 C60 CAP., Poly. Alum., 820 mF, 16 V, 20%, E5-10.5 Nichicon, PLG1C821MDO1 29 1 C68 CAP., Flim, 2.2 mF, 450 V, 5%, 18.8 x 12.8 (mm) Panasonic, ECW-F2W225JA 30 1 R1 RES., 110 kW, 0.1 W, 1%, 0603 Vishay, CRCW0603110KFKEA 31 1 R2 RES., 75 kW, 0.1 W, 5%, 0603 Vishay, CRCW060375K0JNEA 32 3 R3, R4, R5 RES., 2.37 M,W 1/8 W, 1%, 0805 Yageo, RC0805FR-072M37L 33 2 R6, R19 RES., 3.3 kW, 0.1 W, 1%, 0603 Stackpole, RMCF0603FT3K30 34 1 R7 RES., 60 mW, 1 W, 1%, 2512 Vishay, WSL2512R0600FEA 35 2 R8, R34 RES., 11 kW, 0.1 W, 1%, 0603 Panasonic, ERJ-3EKF1102V 36 2 R9, R38 RES., 23.2 kW, 0.1 W, 1%, 0603 Panasonic, ERA-3AEB2322V www.onsemi.com 13 Manufacturer Part Number DN05067/D Table 5. BILL OF MATERIAL (continued) Items Qty. Reference Part Description Manufacturer Part Number 37 2 R10, R13 RES., 220 kW, 1/4 W, 1%, 1206 Yageo, RC1206FR-07220KL 38 1 R11 RES., 1.8 MW, 1/8 W, 1%, 0805 Rohm, KTR10EZPF1804 39 1 R12 RES., 1.78 MW, 1/8 W, 1%, 0805 Vishay, CRCW08051M78FKEA 40 1 R14 RES., 10 W, 1 W, 1%, 2010 Stackpole, RMCP2010FT10R0 41 1 R15 RES., 2.05 kW, 0.1 W, 1%, 0603 Yageo, RC0603FR-072K05L 42 1 R16 RES., 13 kW, 0.1 W, 1%, 0603 Yageo, RC0603FR-0713KL 43 1 R17 RES., 13 kW, 1/4 W, 5%, 1206 Panasonic, ERJ-8GEYJ133V 44 1 R18 RES., 4.7 W, 1/8 W, 1%, 0805 Rohm, KTR10EZPF4R70 45 1 R20 RES., 4.7 kW, 0.1 W, 1%, 0603 Rohm, MCR03ERTF4701 46 3 R21, R22, R23 RES., 953 kW, 1/8 W, 1%, 0603 Panasonic, ERJ-6ENF9533V 47 1 R24 RES., 10 kW, 1/8 W, 1%, 0805 Panasonic, ERJ-6ENF1002V 48 2 R25, R27 RES., 20 kW, 0.1 W, 1%, 0603 Rohm, MCR03ERTF2002 49 2 R26, R30 RES., 5.9 kW, 0.1 W, 1%, 0603 Yageo, RC0603FR-075K9L 50 2 R28, R29 RES., 0.56 W, 1/8 W, 1%, 0805 Yageo, RL0805FR-070R56L 51 1 R31 RES., 2.2 kW, 0.1 W, 1%, 0603 Yageo, RC0603FR-072K2L 52 3 R32, R40, R46 RES., 1 kW, 0.1 W, 1%, 0603 Yageo, RC0603FR-071KL 53 1 R33 RES., 14.7 kW, 0.1 W, 1%, 0603 Panasonic, ERJ-3EKF1472V 54 1 R35 RES., 13.7 kW, 0.1 W, 1%, 0603 Panasonic, ERJ-3EKF1372V 55 1 R36 RES., 750 W, 0.1 W, 1%, 0603 Yageo, RC0603FR-07750RL 56 1 R37 RES., 332 W, 0.1 W, 1%, 0603 Vishay, CRCW0603332RFKEA 57 1 R39 RES., 100 W, 0.1 W, 1%, 0603 Yageo, RC0603FR-07100RL 58 1 R41 RES., 7.5 kW, 0.1 W, 1%, 0603 Yageo, MCR03ERTF7501 59 1 R42 RES., 2 kW, 0.1 W, 1%, 0603 Panasonic, ERJ-3EKF2001V 60 1 R43 RES., 150 kW, 0.1 W, 1%, 0603 Yageo, RC0603FR-07150KL 61 1 R44 RES, 12.4 kW, 0.1 W, 1%, 0603 Yageo, RC0603FR-0712K4L 62 6 R47, R48, R57, R58, R59, R60 RES., N/A, 0603 N/A 63 1 R45 RES, 6.8 kW, 0.1 W, 1%, 0603 Yageo, RC0603FR-076K8L 64 3 R53, R56, R52 RES., 0 W, 0.1 W, 0603 Yageo, RC0603JR-070RL 65 2 R49, R50 RES., 24 kW, 1/8 W, 5%, 0805 Yageo, RC0805JR-0724KL 66 2 R54, R55 RES., 4.7 W, 0.1 W, 1%, 0603 Panasonic, P4.7AJCT-ND 67 2 R61, R62 RES., 2.2 MW, 1/4 W, 5%, 1206 Yageo, RC1206JR-072M2L 68 2 R63, R64 RES., 10 W, 1/4 W, 5%, 0805 Stackpole, RPC0805JT10R0 69 1 D1 Diode, 1,000 V, 1 A, DO-214AC Diode Inc, S1M-13-F 70 1 D2 Diode, 600 V, 3 A, DO-214AB Fairchild, S3J 71 1 D3 Diode, SiC, 600 V, 2 A, TO220-2 Cree, C3D02060A 72 1 D5 Diode, 600 V, 1 A, DO-214AC Diode Inc, S1J-13-F 73 1 D6 Diode, Ultra Fast, 600 V, 1 A, DO-214AC Diode Inc, US1J-13-F 74 1 D7 Diode, Ultra Fast, 600 V, 1 A, DO-214AC Micro Commercial Inc., ES1J-LTP 75 1 D8 Diode, Zener, 11 V, 0.5 W, SOD123 ON Semiconductor, MMSZ5241BT1G 76 2 D9, D10 Diode, 75 V, 0.15 A, SOD323F Fairchild, 1N4148WS 77 3 Q1, Q2, Q3 GaN HEMT, 600 V, 9 A, TO220 Transphorm, TPH3002PS 78 2 Ld1, Ld2 IND., 90 mH, DCR< 40 mW Wurth Elek., 7447013 79 1 L3 Common Mode Chk, 10 mH, 1.9 A, 22 x 15 (mm) Wurth Elek., 744 824 310 80 1 L4 IND., 1 mH, 70 mA, 1812 Wurth Elek., 744045102 www.onsemi.com 14 DN05067/D Table 5. BILL OF MATERIAL (continued) Items Qty. Reference Part Description Manufacturer Part Number 81 2 Ld3, Ld4 Shorted N/A 82 1 L5 IND., 1 mH, 0.235 A, 7.6 x 7.6 (mm) Cooper Buss., DRA73-102-R 83 1 LF IND., 480 mH, 200 kHz, CC30/19 Precision, 019-8202-00R 84 1 J1 CONN., 300 V, 10 A, 3Pin_3.5mm Wurth Elek., 691214110003 85 2 J2, J3 BUSH, 54 A Wurth Elek., 7461093 86 2 HS2, HS3 HEATSINK, 10 x 10 (mm) Assmann WSW Comp., V2017B 87 1 PS1 PowerChip, Offline, 12 V, 1.44 W, SO-8C Power Integ., LNK304DG-TL 88 1 MOV1 MOV, 504 V, 3.5 kA, Disc 10.5 mm Panasonic, ERZ-E08A561 89 1 U2 LLC Controller, 16-SOIC ON Semiconductor, NCP1397BDR2G 90 1 U1 PFC Controller, CCM, 200 kHz, SO-08 ON Semiconductor, NCP1654BD200R2G 91 2 U3,U4 Synchronous Rectifier Driver, SO-08 ON Semiconductor, NCP4304BDR2G 92 1 U5 Voltage Reference, SOT23 ON Semiconductor, NCP432BCSNT1G 93 1 U6 Optoisolator, 5 kV, 4-SMD Avargo, HCPL-817-50AE 94 1 U7 X2 CAP. DIS., SOIC-8 ON Semiconductor, NCP4810DR2G 95 1 F1 FUSE, SLOW, 250 V, 6.3 A Littlefuse Inc, 39216300000 96 2 Q4, Q5 MOSFET, N-CH, 40 V, 100 A, PG-TDSON-8 Infineon, BSC017N04NS G 97 1 Transformer Transformer, LLC, 240 W, 1 70 kHz - 200 kHz Precision, 019-7896-00R 98 3 FB1, FB2, FB3 Ferrite Bead, 60 W@100 MHz, 500 mA, 0603 TDK, MMZ1608Y600B 99 1 REC Rectifier Bridge, 600 V, 8 A, D-72 Vishay, VS-KBPC806PBF 100 1 N/A Thermal Pad, 0.9 W/m-K, 18.42 x 13.21 (mm) Aavid Thermalloy, 53-77-9G 101 1 N/A Ferrite Core, 47 W@100 MHz, 4.2 mm OD Wurth Elek., 74270012 Startup Sequence References 1. Connect a load. The load should be resistive, and maximum of 240 W at 12 Vdc. 2. Connect an AC power source, set to the desired voltage higher than 90 V. 3. Place a cooling fan facing the GaN HEMTs heat sink of PFC (provide a minimum of 30 CFM air flow). 4. Turn on the cooling fan if output power is higher than 155 W (> 70% Load). [1] Datasheet NCP1654/D, website: www.onsemi.com, ON Semiconductor. [2] Datasheet NCP1397/D, website: www.onsemi.com, ON Semiconductor. [3] Datasheet NCP4304/D, website: www.onsemi.com, ON Semiconductor. [4] Application Note AND8324/D, website: www.onsemi.com, ON Semiconductor. [5] Bo Yang, F.C. Lee, A.J. Zhang, H. Guisong, "LLC resonant converter for front end DC/DC conversion" Proc. IEEE APEC'02, pp.1108 - 1112, 2002. [6] Application Note. TDPS250E2D2 All in One Power Supply, website: www.transphorm.com, Transphorm Inc. [7] Datasheet of TPH3002PS, website www.transphorm.com Probing Instructions In order to minimize additional inductance during measurement, the tip and the ground of the probe should be directly attached to the sensing points to minimize the sensing loop; while the typical long ground lead should be avoided since it will form a sensing loop and could pick up the noise. The differential probes are not recommended for the GaN signal measurement. www.onsemi.com 15 DN05067/D ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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