T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation Page 1 of 5
1N5518B-1 th r u 1N5 54 6B -1
Available on
commercial
versions
Low Voltage Avalanche
500 mW Zener Diodes DO-35
Qualified per MIL-PRF-19500/437
Quali f i ed Levels:
JAN, J AN TX an d
JANTXV
DESCRIPTION
The 1N5518-1 t hr u 1N 5 546-1 ser ies of 0.5 wat t axial-leaded glass Z ener Voltage Reg ulators
provid es a selec tion fr om 3.3 to 33 volt s with tolerances ran ging from plus/minus 1% to 10% .
The standard tolerance is plus/minus 5% with the B suffix unl ess ordered ot herw ise. These
axial-leaded glass DO -35 Zeners also feature an i ntern al m etallurgical bond. This type of
bonded Zener packag e con stru cti on is also available in J AN, JANTX , and JANTXV military
qualifications. Microsemi also offers numerous oth er Zen er products to meet higher and lower
power applications.
DO-35 (D O-204AH)
Package
Also available in:
DO-213AA MELF
(s urf ace mount)
1N5518BUR-1 thru
1N5546BUR-1
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5518 thru 1N5546 series.
• Voltage tolerances of plus/minus 10%, 5%, 2%, and 1% available. See Note 1 on page 3.
• I nter nal meta llurgi cal bond.
• JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/437 available (requires plus/minus 5%
voltage tolerance or tighter with B-1, C-1 or D-1 suffix).
• RoHS compliant versions available (commercial grade onl y).
APPLI CATIONS / BENEFITS
• Regulates voltage over a broad operating current and temperature range.
• Guaranteed voltage regulation (∆VZ) from IZL to I ZT.
• Voltage selection from 3.3 to 33 V .
• Flexible axial-l ead mounting termi nals.
• Non-sensitive to ESD per MIL-STD-750 Method 1020.
• Minimal capacitance (see Figure 3).
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ” which is avai lable at
microsemi.com.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Steady-State Power
(1)
(Also see derating in Figure 2)
PD 0.5 W
Thermal Resistance Junction-to-Lead (2)
RӨJL
250
oC/W
Thermal Resistance Junction-to-Ambient (3)
RӨJA
300
oC/W
Forward Voltage @ 200 mA
VF
1.1
V
Solder Pad Temperature @ 10 s
TSP
260
oC
Notes: 1. At TL < 50 oC 3/8 inch (10 mm) fr om body or 0.48 W at TA < 25 ºC when mounted on FR4 PC board as
described for thermal resistance above.
2. At 3/8 (10 mm) lead le ngt h f rom bo dy.
3. When mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25 mm.
T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation Page 2 of 5
1N5518B-1 th r u 1N5 54 6B -1
M ECHANICAL and PACKAGI NG
• CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) package.
• TERMINALS: Leads , tin-lead plated solderable per MIL-STD-750, method 2026. RoHS compli ant matte-tin available for
commercial onl y.
• POLARITY: Cathode indicated by band where diode is to be operated with the banded end positive with respect to the opposite
end for Zener regulation.
• MARKING: Part number.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part num ber). Consult factory for quantities.
• WEIGHT: 0.2 grams.
• See Package Dimensions on last page.
PART NOMENCLAT URE
JAN 1N5518 B -1 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
Zener Volta ge Tole ra nce
A = 10%
B = 5%
C = 2%
D = 1%
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Metallurgically Bonded
SYMBOLS & DE FINITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
IZL
Low Regulator (Zener) Current: The lowest rated dc current for the specified power rating.
IZM
Maximum Regulator (Zener) Current: The maxim um rated dc current for the specified power rating.
VZ
Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
∆VZ
Voltage Regulation: The change in Zener voltage between two specified currents or percentage of IZM.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulati on (typically 10% of IZT or IZK) and superimposed on IZT o r I ZK respectively.
T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation Page 3 of 5
1N5518B-1 th r u 1N5 54 6B -1
ELECTRICAL CHARACTERISTICS
(TA = 25
o
C unless otherwise noted. Based on DC measurements at thermal equilibrium; VF = 1.1 Max @ IF = 200 mA for all types.)
JEDEC
TYPE
NUMBER
(N ote 1)
NOMINAL
ZENER
VOLTAGE
VZ @ I ZT
(N ote 2)
Volts
TEST
CURRENT
IZT
mA
(B-C-D Suffix
Only) MAX.
ZENER
IMPEDANCE
ZZT @ IZT
(N ote 3)
Ohms
MAX. REVERSE LEAKAGE
CURRENT (Note 4)
(B-C-D Suffix
Only)
MAXIMUM dc
ZENER
CURRENT IZM
(N ote 5)
mA
(B-C-D Suffix
Only) MAX.
NOISE
DENSITY
AT IZ = 250µA
ND
µ
V/
√
Hz
REGULATION
FACTOR
∆
VZ
(N ote 6)
Volts
LOW V
Z
CURRENT
IZL
(N ote 6)
mA
IR
µA
VR – Volts
A
Suffix
only
B-C-D
Suffix
only
1N5518B-1
1N5519B-1
1N5520B-1
1N5521B-1
1N5522B-1
3.3
3.6
3.9
4.3
4.7
20
20
20
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
0.90
0.90
1.0
1.5
1.0
1.0
1.0
1.5
2.0
115
105
98
88
81
0.5
0.5
0.5
0.5
0.5
0.90
0.90
0.85
0.75
0.60
2.0
2.0
2.0
2.0
1.0
1N5523B-1
1N5524B-1
1N5525B-1
1N5526B-1
1N5527B-1
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
1.0
1.0
26
30
30
30
35
2.0
2.0
1.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.5
1.0
1.0
1.0
2.0
0.65
0.30
0.20
0.10
0.05
0.25
0.25
0.01
0.01
0.01
1N5528B-1
1N5529B-1
1N5530B-1
1N5531B-1
1N5532B-1
8.2
9.1
10.0
11.0
12.0
1.0
1.0
1.0
1.0
1.0
40
45
60
80
90
0.5
0.1
0.05
0.05
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
9.1
9.9
10.8
46
42
38
35
32
4.0
4.0
4.0
5.0
10
0.05
0.05
0.10
0.20
0.20
0.01
0.01
0.01
0.01
0.01
1N5533B-1
1N5534B-1
1N5535B-1
1N5536B-1
1N5537B-1
13.0
14.0
15.0
16.0
17.0
1.0
1.0
1.0
1.0
1.0
90
100
100
100
100
0.01
0.01
0.01
0.01
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
15
20
20
20
20
0.20
0.20
0.20
0.20
0.20
0.01
0.01
0.01
0.01
0.01
1N5538B-1
1N5539B-1
1N5540B-1
1N5541B-1
1N5542B-1
18.0
19.0
20.0
22.0
24.0
1.0
1.0
1.0
1.0
1.0
100
100
100
100
100
0.01
0.01
0.01
0.01
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
20
20
20
25
30
0.20
0.20
0.20
0.25
0.30
0.01
0.01
0.01
0.01
0.01
1N5543B-1
1N5544B-1
1N5545B-1
1N5546B-1
25.0
28.0
30.0
33.0
1.0
1.0
1.0
1.0
100
100
100
100
0.01
0.01
0.01
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
35
40
45
50
0.35
0.40
0.45
0.50
0.01
0.01
0.01
0.01
NOTES:
1. TOLERANC E AND VOLTAGE DESIGNATION –
The JEDEC type numbers with A suffix are +/-10 % with guaranteed limits for VZ, IR, and VF. Units with guarante ed limits for all six
parameters are indicated by a B suffix for +/-5.0 % units, C suffix for + /-2.0% and D suffix for +/-1.0%.
2. ZENER VO LTAGE (VZ) MEASUREMENT –
Nominal Zener voltage is measured with the device junction in thermal equilibrium with ambient temperatu r e of 25 oC.
3. ZENER I MPEDAN CE (ZZ) MEASUREMENT –
The Zen er impedance is derived from the 6 0 Hz ac volta ge, whi c h res ul ts w he n a n a c c urre nt hav i ng an rms v a lue equa l to 10%
of the dc Zener current (IZT ) is superimposed on IZT .
4. REVERSE LEAKAGE C URRENT (IR) –
Reverse leak age currents are guaranteed and are measured at VR as shown on the table.
5. MAXIMUM REGULATOR CURRENT ( IZM) –
The maximum cur rent shown is as shown in MIL-PRF-19500/437.
6. MAXIMUM REGULATION FACTOR (∆VZ) –
∆VZ is the maximum difference between VZ at IZT and VZ at IZL measured wit h t he devic e j uncti o n in the rma l eq uili bri um.
T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation Page 4 of 5
1N5518B-1 th r u 1N5 54 6B -1
GRAPHS
FIGURE 1 TL – Lead Temperature (oC) 3/8” from body
Noise Density M easu r ement Circ uit
FIGURE 2 – Temperature-Power Derating Curve
Zener Voltage VZ
FIGURE 3 FIGURE 4
Capaci tance vs. Zener V oltage (typical) Zener Diode C haracteristics and Symbol Identificati on
Rated Maximum dc Operation (mW)
Noise density, (N
D
) is specified in microvolts rms per
square-root-hertz (µV/ √Hz). Actual measurement is
perf o rmed using a 1 kHz to 3 kHz frequency bandpass
filter with a constant Zener test current (IZT) at 25 oC
ambient temperatur e.
Typical Capacitance in Pico Farads
At zero volts
At –2 volt s (VR)
T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation Page 5 of 5
1N5518B-1 th r u 1N5 54 6B -1
PACKAGE DIM ENSIONS
Ltr
Dimensions
Notes
Inch
Millimeters
Min
Max
Min
Max
BD
.055
.090
1.40
2.29
3
BL
.120
.200
3.05
5.08
3
LD
.018
.022
0.46
0.56
LL
1.000
1.500
25.40
38.10
LL1
.050
1.27
4
NOTES:
1. Dimensions are in inch.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder
but shall not be subject to minimum limit of BD. The BL dimension shall include the entire body including
slugs.
4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
