MMBTA05 / MMBTA06 MMBTA05 / MMBTA06 Surface mount general purpose Si-epitaxial planar transistors Vielzweck Si-Epitaxial Planar-Transistoren fur die Oberflachenmontage NPN NPN Version 2007-06-25 1.1 2.9 0.1 0.4 Type Code 1.3 0.1 2.5 max 3 2 1 1.9 Dimensions / Mae [mm] 1=B 2=E 3=C Power dissipation Verlustleistung 250 mW Plastic case Kunststoffgehause SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MMBTA05 MMBTA06 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 60 V 80 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 60 V 80 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 4V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 500 mA Base current - Basisstrom IB 100 mA Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temperature - Sperrschichttemperatur Tj -55...+150C Storage temperature - Lagerungstemperatur TS -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. ICB0 ICB0 - - - - 100 nA 100 nA IEB0 - - 100 nA VCEsat - - 250 mV VBEsat - - 1.2 V Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 60 V IE = 0, VCB = 80 V MMBTA05 MMBTA06 Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 4 V Collector saturation voltage - Kollektor-Sattigungsspannung ) 2 IC = 100 mA, IB = 10 mA Base saturation voltage - Basis-Sattigungsspannung ) 2 IC = 100 mA, IB = 10 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MMBTA05 / MMBTA06 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE 100 100 - - - - fT 100 MHz - - DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 100 mA Gain-Bandwidth Product - Transitfrequenz VCE = 2 V, IC = 10 mA, f = 100 MHz Thermal resistance junction - ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 420 K/W 1) Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren MMBTA55, MMBTA56 Marking - Stempelung MMBTA05 = 1H MMBTA06 = 1GM 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG