BSS84 PRELIMINARY P-Channel Enhancement Mode MOSFET FEATURES ni e -50V , -0.13A, Roson=10Q @Ves=-10V. ? High dense cell design for low Ros(on). ; e Rugged and reliable. > e Surface Mount Package. G 4 SOF23 3} F: Gy. ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDs -50 V Gate-Source Voltage VGs +20 V Drain Current-Continuous* @Ts=125C ID 0.18 A Pulsed IDM 0.52 A Drain-Source Diode Forward Current * Is -0.13 A Maximum Power Dissipation * PD 0.36 W Operating Junction and Storage Tu, TsTG 55 to 150 C Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * RaJA 350 *C/W 7-12BSS84 ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVoss | Ves=0V, ID- -250uA 50 V Zero Gate Voltage Drain Current Ipss Vos=-50V, Ves=0V -15 | WA Gate-Body Leakage lass Ves =+20V, Vos=0V +10 | nA ON CHARACTERISTICS Gate Threshold Voltage Vestn) | Vps=Ves, lb=-imA 0.8 |-1.75) 2 | V Drain-Source On-State Resistance Ros(on) | Ves=-10V, In= -0.13A 23 | 10] Q Forward Transconductance Ors Vos= -10V, In=-0.13A | 0.05] 0.27 S DYNAMIC CHARACTERISTICS Input Capacitance Ciss 87. | 45 | PF Vos =-25V, Vas = OV Output Capacitance Coss =. 0MH2 16 | 25 | PF Reverse Transfer Capacitance Crss 5 | 12 | PF SWITCHING CHARACTERISTICS Tum-On Delay Time {D(ON) Von = -30V, 9 | 12 | ns ; lp =-0.27A, Rise Time tr Ves =-10V 38 | 50 | ns Turn-Off Delay Time {D(OFF) Reen = 500 8 | 10 | ns Fall Time tf 19 | 25 | ns 7-13BSS84 ELECTRICAL CHARACTERISTICS (Ts=25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max | Unit DRAIN-SOURCE DIODE CHARACTERISTICS* Diode Forward Voltage Vsp Vas = 0V, Is =-0.26A -0.95| -1.2] V Notes a.Surface Mounted on FR4 Board, t<10sec. b.Pulse Test:Pulse Width <300 1s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Ip, Drain Current (A) C, Capacitance (pF) -1.0 -10V 7 -6V -0.8 -0.6 -0.4 -0.2 0 oO +1 2 38 4 5 4 Vos, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 60 50 40 30 20 0 5 10 15 20 25 30 -Vps, Drain-to Source Voltage (V) Figure 3. Capacitance Ip, Drain Current (A) Drain-Source, On-Resistance Rpson), Normalized 7-14 -0.8 -0.6 -0.4 -0.2 0 Vos=-10V 25T Ty=125C 0 -1 2 3 4 5 6 Vas, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics Vas=-10V Tj=125C 25C -55C 0 0.2 0.4 0.6 0.8 -Ip, Drain Current(A) Figure 4. On-Resistance Variation with Drain Current and TemperatureVth, Normalized BSS84 o 16 TT 2 1.15 a Vps=Vcs & Ip=-250 wA A 5 14 = =1.10 Ip=-I1mA 3 > > a 3 Ze 1.05 2 1.2 ~~ 8 3 o > sx E 10 Eg 100 Fe 5 Fy 8 os ~~ 23 095] a 8 aN g 3 o 06 a Q 0.90 o & o 0.4 5 0.85 0 -25 0 25 50 75 100 125 150 -0 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Tj, Junction Temperature (C) Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation with Temperature with Temperature 0.5 20.0 = Q 04 = 100 ~ Oo c 5 e 8 0.3 2 z s 8 0.2 3 s z F 0.1 a Fe a ue Vps=-10V " oo 1 1.0 0 0.2 0.4 0.6 0.8 0.4 0.6 0.8 1.0 1.2 1.4 -lps, Drain-Source Current (A) -Vsp, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage with Drain Current Variation with Source Current _ 10 5 = Vos=-10V A & F w=0.3A 7 ze 1 = S 6 2 3 A 0.1 3 3 2 4 J s 2 @ a oO - g 2 f a 0.01 Ves=-10V S V ' Single Pulse 0 0.001 Tis 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 1 10 50 = 100 Qg, Total Gate Charge (nC) -Vps, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating AreaBSS84 Vpb Ri td(on) >| [+> VIN D VOUT Ves VouT ) RGEN G Ss VIN 10% = INVERTED PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 9 a s9 = Bp a r(t), Normalized Effective 2 Transient Thermal Impedance 1. Roua (t)=r (t) * Rava 2. Roua=See Datasheet 3. Tum-Ta = Pom* Roya (t) 4. Duty Cycle, D=ti/te 0.001 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 7-16