AY/. X04xxxF SENSITIVE GATE SCR FEATURES a IT(RMS) =4A = Vor = 400V to 800V a Low let < 200A DESCRIPTION K The X04xxxF series of SCRs uses a high A performance TOP GLASS PNPN_ technology. G These parts are intended for general purpose applications where low gate sensitivity is required, T0202-3 like small engine ignition, SMPS crowbar (Plastic) protection, food processor. a ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit TRIMS) RMS on-state current Tco= 90C 4 A (180 conduction angle) Ta= 25C 1.35 ITtav) Mean on-state current Tc= 90C 2.5 A (180 conduction angle) Ta= 25C 0.9 ITsm Non repetitive surge peak on-state current | ip=8.3ms 33 A (Tj initial = 25C ) tp=10ms 30 It It Value for fusing tp=10ms 4.5 As dl/dt Critical rate of rise of on-state current 50 A/us la=10mA dia /dt=0.1 A/us. Tstg Storage and operating junction temperature range - 40, + 150 S qj -40, +125 Tl Maximum lead temperature for soldering during 10s at 260 C 4.5mm from case Voltage Symbol Parameter Unit D M N VbRM Repetitive peak off-state voltage 400 | 600 | 800 Vv VRRM Tj= 125C Rak= 1KQ August 1998 Ed:1A 1/4 X04xXxxF THERMAL RESISTANCES Symbol Parameter Value Unit Rth{j-a) | Junction to ambient 100 CIW Rth{j-c) | Junction to case for DC 5 C/W GATE CHARACTERISTICS Paway=0.2Wmax. Pau=3 W max. (tp=20 ps) Iam = 1.2 Amax. (tp = 20 1s) Veo =0.1Vmin. (Vo=VorM Ri=3.3kQ Rek=1KQ2 Tj= 125C) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Sensitivity Unit 02 03 05 lat Vp=12V (DC) Ri=1402 Tj= 25C | MIN 20 20 LA MAX | 200 200 50 Vet Vp=12V (DC) Ri=1400 Tj= 25C | MAX 0.8 VRGM IRc =10nA Tj= 26C | MIN 8 IH r= 50mA Rex = 1 KO Tj= 25C | MAX 5 mA IL Ie=imA Rex = 1 K2 Tj= 26C | MAX 6 mA VIM w= 8A tp= 380s Tj= 25C | MAX 1.8 Vv IDRM Vo = Vorm Rek = 1 K2 Tj= 25C | MAX 5 LA IRRM VrR=VRRM Tj= 110C | MAX 200 dvi/at Vp=67%Vpram Rak = 1 KQ Tj= 110C | MIN 10 15 15 | Vus ORDERING INFORMATION X 4 03 M F SCR TOP GLASS J PACKAGE : F=TQ202-3 CURRENT *_ SENSITIVITY VOLTAGE 2/4 X04xXxxXF Fig.1 : Maximum average power dissipation ver- sus average on-state current. A | 3 As ~Q-1807 (| Z /y O = 120 2 * Ms C - 90 CY = 60 1 \ CY = 30 | avy) oO L Fig.3 : Average on-state current versus case tem- perature. ITpayy (A) 1 0.8 ~ ~~ IN 0.6 as Of = 180 0.4 ae 0.2 ~ Tamb Fey N 0 0 10 20 30 40 50 60 7O 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igi[Tj] Ih[Tj] Igi[Tj=25 C] Ih[ Tj=25 C] 10.0 TICS) 40 -20 0 20 40 60 80 100 120 140 Fig.2 : Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb and Tcase). P (W) Tease (C) 5 L85 A \ \ Lo5 Rtht{j-c} 3 \ \ +105 \ 4 | Rth{j-a) L445 \ . Pe ee amb (Cc) Pa L125 0 20 40 60 80 100 120 140 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zih(j-ayRth(j-a) 1.00 0.10 tpis) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. smlA) 35 ! TTI Tj initial = 25 TT c | a 30 25 20 Ky 15 PS 10 = Number of cycles 1 10 100 1000 3/4 X04xXxxF Fig.7 : Non repetitive surge peak on-state current Fig.8 : On-state characteristics (maximum values). for a sinusoidal pulse with width : tp < 10ms, and corresponding value of Rt Irgqq (A). Ft (A's) ty (A) 100 100 Tj initial = 25C Tj initial 25C 10 40 T| max Vio =0.95V Ri -0.1008 Vim) 1 1 41 10 Oo 0.5 1 1.5 2 2.5 3 3.5 4 PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS A REF. Millimeters Inches _> Typ. Max. Typ. Max. A 10.1 0.398 Cc Cc 7.3 0.287 D 10.5 0.413 O la J E 7.4 0.290 > iF J F 1.5 0.059 5olUhl H 0.51 0.020 _>I tH J 1.5 0.059 M 4.5 0.177 PN N 53 0.209 N ae Nt | 2.54 0.100 Oo 1.4 0.055 P 0.7 0.028 Marking : type number Weight: 19 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respons\bility for the consequences of use of such information nor for any infringement of patents or other rights of third partias which may result from its use. No license is granted by implication or otherwise under any patent or patent rights cf STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compeonenis in life support devices or systems without express written ap- proval of STMicroelectronics. The ST loge is a registered trademark of ST Microelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Ganada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 ky