MBR360PBF - Vishay Presicion Group

Document Number: 93450 For technical questions, contact: diodes-tech@vishay.com www.vishay.com

Revision: 06-Nov-08 1

Schottky Rectifier, 3 A

MBR350, MBR360

Vishay High Power Products

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

• Guard ring for enhanced ruggedness and long term

reliability

• Lead (Pb)-free plating

• Designed and qualified for industrial level

DESCRIPTION

The MBR350, MBR360 axial leaded Schottky rectifier has

been optimized for very low forward voltage drop, with

moderate leakage. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

PRODUCT SUMMARY

IF(AV) 3 A

VR50/60 V

VF at 3 A at 25 °C 0.73 V

IRM 15 mA at 125 °C

C-16

Cathode Anode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

IF(AV) Rectangular waveform 3.0 A

VRRM 50/60 V

IFSM tp = 5 µs sine 460 A

VF3 Apk, TJ = 25 °C 0.73 V

TJ- 40 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL MBR350 MBR360 UNITS

Maximum DC reverse voltage VR50 60 V

Maximum working peak reverse voltage VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current

See fig. 4 IF(AV) 50 % duty cycle at TL = 50 °C, rectangular waveform 3.0

Maximum peak one cycle

non-repetitive surge current

See fig. 6

IFSM

5 µs sine or 3 µs rect. pulse Following any rated load

condition and with rated

VRRM applied

460

10 ms sine or 6 ms rect. pulse 80

Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 10 mH 5.0 mJ

Repetitive avalanche current IAR

Current decaying linearly to zero in 1 µs

Frequency limited by, TJ maximum VA = 1.5 x VR typical 1.0 A

www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93450

2Revision: 06-Nov-08

MBR350, MBR360

Vishay High Power Products Schottky Rectifier, 3 A

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

Notes

(1) thermal runaway condition for a diode on its own heatsink

(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop

See fig. 1 VFM (1)

1.0 A

TJ = 25 °C

0.58

3.0 A 0.73

9.4 A 1.06

1.0 A

TJ = 125 °C

0.49

3.0 A 0.64

9.4 A 0.89

Maximum reverse leakage current

See fig. 2 IRM (1)

TJ = 25 °C

VR = Rated VR

0.6

mATJ = 100 °C 8

TJ = 125 °C 15

Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 190 pF

Typical series inductance LSMeasured lead to lead 5 mm from package body 9.0 nH

Maximum voltage rate of change dV/dt Rated VR10 000 V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage

temperature range TJ (1), TStg - 40 to 150 °C

Maximum thermal resistance,

junction to lead RthJL (2) DC operation

See fig. 4 30 °C/W

Approximate weight 1.2 g

0.042 oz.

Marking device Case style C-16 MBR350

MBR360

dPtot

dTJ

------------- 1

RthJA

--------------<

Document Number: 93450 For technical questions, contact: diodes-tech@vishay.com www.vishay.com

Revision: 06-Nov-08 3

MBR350, MBR360

Schottky Rectifier, 3 A Vishay High Power Products

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Allowable Lead Temperature vs.

Average Forward Current

Fig. 5 - Forward Power Loss Characteristics

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

Forward Voltage Drop - V FM (V)

Instantaneous Forward Current - I F(A)

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Tj = 150˚C

Tj = 125˚C

Tj = 25˚C

0.001

0.01

0.1

100

0204060

125˚C

25˚C

T = 150˚C

Reverse Voltage - V R (V)

Reverse Current - I R (mA)

100

1000

0 40 80 120 160

T = 25˚C

Junction Capacitance - C T (pF)

Reverse Voltage - V R (V)

Average Forward Current - I F(AV) (A)

Allowable Lead Temperature (°C)

100

120

140

160

012345

Square wave (D = 0.50)

80% Rated Vr applied

see note (1)

Average Power Loss (Watts)

Average Forward Current - I F(AV) (A)

0.5

1.5

2.5

00.511.522.533.544.55

RMS Limit

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93450

4Revision: 06-Nov-08

MBR350, MBR360

Vishay High Power Products Schottky Rectifier, 3 A

Fig. 6 - Maximum Non-Repetitive Surge Current

ORDERING INFORMATION TABLE

Square Wave Pulse Duration - t p(microsec)

Non-Repetitive Surge Current - I FSM (A)

100

1000

10 100 1000 10000

At Any Rated Load Condition

And With rated Vrrm Applied

Following Surge

1- Schottky MBR series

2- Current rating: 3 = 3 A

3- Voltage rating

4- TR = Tape and reel package (1200 pcs)

None = Box package (500 pcs)

50 = 50 V

60 = 60 V

Device code

1324

MBR 3 60 TR

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95242

Part marking information http://www.vishay.com/doc?95304

Packaging information http://www.vishay.com/doc?95309

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1

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