This is information on a product in full production.
May 2015 DocID026396 Rev 2 1/16
STF12N120K5,
STFW12N120K5
N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5
Power MOSFETs in TO-220FP and TO-3PF packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Industry’s lowest R
DS(on)
x area
•Industry’s best figure of merit (FoM)
•Ultra low gate charge
•100% avalanche tested
•Zener-protected
Applications
•Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
TO-3PF
TO-220FP
'
*
6
$0Y
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STF12N120K5 1200 V 0.69 Ω12 A 40 W
STFW12N120K5 63 W
Table 1. Device summary
Order code Marking Packages Packing
STF12N120K5 12N120K5 TO-220FP Tube
STFW12N120K5 TO-3PF
www.st.com
Contents STF12N120K5, STFW12N120K5
2/16 DocID026396 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Elect rical characteristi c s (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 T O-220FP, package informat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 T O-3PF, package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID026396 Rev 2 3/16
STF12N120K5, STFW 12N1 20K5 Electr ica l ratings
16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
TO-220FP TO-3PF
V
GS
Gate-source voltage ± 30 V
I
D
Drain current at T
C
= 25 °C 12 A
I
D
Drain current at T
C
= 100 °C 7.6 A
I
DM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 48 A
P
TOT
Total dissipation at T
C
= 25 °C 40 63 W
V
ISO
Insulation withstand voltage (RMS) from
all thr ee le ads to ex tern al he at si nk
(t = 1 s, T
C
= 25 °C) 2500 3500 V
I
AR (2)
2. Pulse width limited by T
Jmax.
Max current during repetitive or single
puls e avalanche 4A
EAS (3)
3. Starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V
Single pulse avalanche energy 215 mJ
dv/dt
(4)
4. I
SD
≤ 12 A, di/dt ≤ 100 A/µs, V
Peak
≤ V
(BR)DSS
Peak diode rec ov ery vo ltage slope 4.5 V/ns
dv/dt (5)
5. V
DS
≤ 960 V
MOSFET dv/dt ruggedness 50 V/ns
T
j
T
stg
Operating junction temperature
Storage temperatur e - 55 to 150 °C
Table 3. Thermal d ata
Symbol Parameter Value Unit
TO-220FP TO-3PF
R
thj-case
Thermal resistance junction-case max 3.1 1.98 °C/W
R
thj-amb
Thermal resistance junction-amb max 62.5 50 °C/W
Ele ctrical characteristics STF12N120K5, STFW12N120K5
4/16 DocID026396 Rev 2
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage, (V
GS
= 0) I
D
= 1 mA 1200 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0) V
DS
= 1200 V 1 µA
V
DS
= 1200 V, Tc=125 °C 50 µA
I
GSS
Gate body leakage current
(V
DS
= 0) V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate thresh old voltage V
DS
= V
GS
, I
D
= 100 µA 3 4 5 V
R
DS(on)
Static drain-source on
resistance V
GS
= 10 V, I
D
= 6 A 0.62 0.69 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
-1370- pF
C
oss
Output capacitance - 110 - pF
C
rss
Reverse transfer
capacitance -0.6- pF
C
o(tr)(1)
1. Time-related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance,
time-related VGS = 0, VDS = 0 to 960 V -128- pF
Co(er)(2)
2. Energy-related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance,
energy-related -42-pF
RGIntr insic gate resistance f = 1 MHz, ID = 0 - 3.5 - Ω
QgTot al gate charge VDD = 960 V, ID = 6 A
VGS = 10 V
(see Figure 18)
- 44.2 - nC
Qgs Gate-s ource cha r ge - 7.3 - nC
Qgd Gate-drain charge - 30 - nC
DocID026396 Rev 2 5/16
STF12N120K5, STFW 12N1 20K5 Electri cal chara ct er istics
16
The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD
capability of the device. The Zener voltage is appropriate for efficient and cost-effective
intervention to protect the device integrity. These integrated Zener diodes thus eliminate the
need for external components.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 600 V, I
D
= 6 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 20)
-23-ns
t
r
Rise time - 11 - ns
t
d(off)
Turn-o f f del ay time - 68.5 - ns
t
f
Fal l time - 18.5 - ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 12 A
I
SDM
Source-drain current (pulsed) - 48 A
V
SD(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage I
SD
= 12 A, V
GS
=0 - 1.5 V
t
rr
Reverse recovery time I
SD
= 12 A, V
DD
= 60 V
di/dt = 100 A/µs,
(see Figure 19)
- 630 ns
Q
rr
Reverse recovery charge - 12.6 µC
I
RRM
Reverse recovery current - 40 A
t
rr
Reverse recovery time I
SD
= 12 A,V
DD
= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 19)
- 892 ns
Q
rr
Reverse recovery charge - 15.6 µC
I
RRM
Reverse recovery current - 35 A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ±1 mA, I
D
= 0 30 - V
Ele ctrical characteristics STF12N120K5, STFW12N120K5
6/16 DocID026396 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP
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Figure 6. Output characteristics Figure 7. Transfer characteristics
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DocID026396 Rev 2 7/16
STF12N120K5, STFW 12N1 20K5 Electri cal chara ct er istics
16
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage vs
temperature Figure 13. Normalized on-resistance vs
temperature
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Ele ctrical characteristics STF12N120K5, STFW12N120K5
8/16 DocID026396 Rev 2
Figure 14. Normalized V
(BR)DSS
vs temperature Figure 15. Source-drain diode forward
characteristics
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J
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DocID026396 Rev 2 9/16
STF12N120K5, STFW 12N1 20K5 Test circuits
16
3 Test circuits
Figure 17. Switching time test circuit for
resistive load Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times Figure 20. Unclamped inductive load tes t circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
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Package information STF12N120K5, STFW12N120K5
10/16 DocID026396 Rev 2
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID026396 Rev 2 11/16
STF12N12 0K5, ST FW 12N1 20K5 Pack age infor m atio n
16
4.1 TO-220FP, package information
Figure 23. TO-220FP package outline
B5HYB.B%
Package information STF12N120K5, STFW12N120K5
12/16 DocID026396 Rev 2
Table 9. TO-220FP mechanical data
Dim. mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Ø3 3.2
DocID026396 Rev 2 13/16
STF12N12 0K5, ST FW 12N1 20K5 Pack age infor m atio n
16
4.2 TO-3PF, package outline
Figure 24. TO-3PF package outline
B'
Package information STF12N120K5, STFW12N120K5
14/16 DocID026396 Rev 2
Table 10. TO-3PF mechanical data
Dim. mm
Min. Typ. Max.
A5.30 5.70
C2.80 3.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F0.65 0.95
F2 1.80 2.20
G10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
∅3.40 3.80
DocID026396 Rev 2 15/16
STF12N12 0K5, ST FW 12N1 20K5 Revision histo ry
16
5 Revision history
Table 11. Document revision history
Date Revision Changes
22-May-2014 1 First release. Part number (STFW12N120K5) previously
included in datasheet DocID022133
11-May-2015 2
Updated title, features and description.
Updated Table 4.: On/off states and Table 5.: D y na mi c.
Updated Figure 9.: St atic drain-source on-resistance and Figure
10.: Capacitance variations
Minor text changes.
STF12N120K5, STFW12N120K5
16/16 DocID026396 Rev 2
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