BONLCCOV 0201025... 3301 ELECTRONICS WAY @ WEST PALM BEACH,FLORIDA 33407 TEL: (407) 848-4311 @ TLX: 51-3435 @ FAX: (407) 863-5946 PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt.(1) voss S00 Vde Drain-Gate Voltage Gate-Source Voltage Continuous VGS #20 Vde tre seers! Continuous ID 40 Ade Drain Current Pulsed(3) 1DM 160 A Tota! Power Dissipation PD SOO W Power Dissipation Derating > 25C 4.0 W/C Operating & Storage Temp. | TU/Tsig -SS TO +150 C Thermal Resistance RthuJdc 0.25 C/W Max.Lead temperature TL 300 C SOOV, 40A, 0.149 SDF40N50 JAM FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ LOW IR LOSSES @ OPTIONAL MIL-STD-883 SCREENING @ COPPER CORED 6&2 ALLOY PINS @ LOW THERMAL RESISTANCE ELECTRICAL CHARACTERISTICS Tc=26C (WSE spcoreD ) PARAMETER SYMBOL TEST CONDITIONS MIN] TYP | MAX JUNITS| Drain-source VGS=0V Breakdown Voit |(BR0SS 1D=S00 pA S00) - ~ V Gate Threshold/ves(tH)/vDS=vGS 1D=500 nA [2.0 4.0| V Voitage la : ~ . Gate Source = _ _ Leakage {GSS |VGS=+20 V 200] nA Zero Gate VDS=MAX RATING VGS=0| | - |SoO| WA Voltage Drain | 10SS = Current Woeno'8 MAX RATING - ~ j2.0] mA Static Drain- VGS=10 V Source On-State/RDS(ON ~ - ~ |o.14, O Resistance(1) (ON) |D=24A Forward Trans- vOS 2 50 V Conductance (2) gfs 1DS=24A 13] - = |S(0) Input Capacitance! CISS - |6200| - pF Qutput Capacitance] COSS een OY yy Oemes v - 1970] - pF R Transt a z - Capacitance. | CRSS > [170 pF Turn-On Delay |td(on)|lypp=100v RG=2.20 - { - | 35 [ons Rise Time tr (uosees ctening 11 - | - |120] ns Turn-Off Delayltd(off)! are essentially indepen- = - }130] ns Fall Time tf dent of operating temp. _ _ 100 | ns Total Gate Charge (Gate-Source Plus} Qg - - |380] nc Gate-Drain VGS=10V, |D=40A Gate-Source VDS=0.8 MAX.RATING Charge Qgs (Gate charge is essenti- ~ ~ 54] 9c _ . a y |Indgependen Qo e Cmte) Qgd operating temperature) _ . 185] nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT. T,= 26C (Wise SoscrED PARAMETER SYMBOL TEST CONDITIONS MIN.) TYP .|MAX.JUNITS Continuous wp: Source Current] |S Modified MOSFET - | - | 40 A (Body Diode) Symbol showing e integral reverse Pulse Source P-N junction recti- Current (Body {SM fier (See schematic) - - 160 A Diode) (1) Diode Forward IF=40A, VGS=0V _ - Voltage (2) VSD |te=+25%C 2.0} V Reverse aeome _ _ Recovery Time | {rr |Testes C 1000!| ns Reverse Re- IF=40A covery Charge Qrr di/df=100A/ WS - 1s - pC SCHEMATIC Do Dp O_"-+ ~? * Lt) $ Oo So (CUSTOM SCHEMATIC OPTIONS AVAILABLE) STANDARO BEND CONFIGURATION JAM (CUSTOM BEND OPTIONS AVAILABLE) () TU = 25C to 180C (3 Pulse test: Pulse Width <300uS, Duty Cycle < 2%. Repatitive Rating: Pulse Width iimlted By Max. Junction Temperature. REL .3/93 A2g -1