Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M MCR08B, MCR08M RoHS Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Features * Sensitive Gate Trigger Current * Blocking Voltage to 600 V * Glass Passivated Surface for Reliability and Uniformity * Surface Mount Package * These Devices are Pb-Free and are RoHS Compliant Functional Diagram Pin Out G 4 A 1 2 K 3 Additional Information Datasheet Resources Samples (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.08/26/20 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Maximum Ratings (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (-40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) Symbol Value Unit VDRM, VRRM 200 600 V IT 0.8 A 8.0 A I2t 0.4 Asec PGM 0.1 W MCR08B MCR08M On-State RMS Current (All Conduction Angles; TC = 80C) Peak Non-Repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25C) (RMS) ITSM Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (TC = 80C, t = 1.0 s) Average Gate Power (t = 8.3 ms, TC = 80C) PGM (AV) 0.01 W Operating Junction Temperature Range TJ -40 to +125 C Storage Temperature Range Tstg -40 to +150 C Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction-to-Case (AC) PCB Mounted per Figure 1 R8JC 2.2 C/W Thermal Resistance, Junction-to-Tab Measured on Anode Tab Adjacent to Compound R8JT 25 C/W TL 260 C Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Electrical Characteristics - OFF (TJ = 25C unless otherwise noted ; Electricals apply in both directions) Characteristic Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM, RGK = 1 k Symbol TJ = 25C TJ = 125C Min Typ Max Unit IDRM, - - 10 A IRRM - - 200 mA Electrical Characteristics - ON (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Peak Forward On-State Voltage (Note 2) (IT = 1.0 A Peak) VTM - - 1.7 V Gate Trigger Current (Continuous dc) (Note 4) (VAK = 12 Vdc, RL = 100 ) IGT - - 200 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) Max Unit IH - - 5.0 mA Holding Current (Note 3) (VAK = 12 Vdc, Initiating Current = 20 mA) VGT - - 0.8 V Turn-On Time (VAK = 12 Vdc, ITM = 5 Adc, IGT = 5 mA) tgt - 1.25 - s 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. RGK = 1000 Q is included in measurement. 4. RGK is not included in measurement. Dynamic Characteristics Symbol Min Typ Max Unit Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110C, RGK = 1 k, Exponential Method) Characteristic dv/dt 10 - - V/s Critical Rate of Rise of On-State Current (IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/sec, Igt = 50 mA di/dt - - 50 A/ms (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.08/26/20 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Voltage Current Characteristic of SCR +Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current Anode+ VTM on state IRRM at VRRM Forward Blocking Region (Off State) Reverse Avalanche Region Anode- IH +Voltage IDRM at VDRM Forward Blocking Region (Off State) Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 0.15 3.8 0.079 2.0 0.091 0.091 2.3 2.3 0.079 2.0 0.984 25.0 0.059 0.059 1.5 1.5 0.059 1.5 0.096 2.44 0.096 2.44 0.059 1.5 0.244 6.2 inches mm 0.096 2.44 0.059 1.5 0.472 12.0 Board mounted vertically cinch 8840 edge connector. Board Thickness = 65Mil. Foil Thickness = 2.5Mil. Material: G10 Fiberglass Base Epoxy (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.08/26/20 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Figure 3. Junction to Ambient Thermal Resistance vs Copper Tab Area Figure 2. On-State Characteristics 10 1.0 IT 0.1 TYPICAL AT TJ = 110C MAX AT TJ = 110C MAX AT TJ = 25C 0.01 0 2.03 1.0 .0 4.0 vT Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 110 100 100 50 OR 60 Hz HALFWAVE 90 ANGLE 80 dc 70 180 60 120 50 = 30 40 60 30 20 = CONDUCTION 0 0.1 90 T A , MAXIMUM ALLOWABLE AMBIEN T TEMPERATURE ( C) T A , MAXIMUM ALLOWABLE AMBIEN T TEMPERATURE ( C) Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature dc 90 180 80 120 70 = 30 60 60 50 90 40 30 = 0.2 0.4 0.3 20 0.5 CONDUCTION ANGLE 0 0.1 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature dc 100 110 2, 50 PAD AREA = 4.0 cm OR 60 Hz HALFWAVE 90 120 = 30 60 90 0.1 IT(AV) 120 = 30 60 90 = CONDUCTION ANGLE ANGLE 0 0.5 180 = CONDUCTION 50 0.4 50 OR 60 Hz HALFWAVE dc 180 60 0.3 Figure 7. Current Derating Reference: Anode Tab T(tab), MAXIMUM ALLOWABLE TAB TEMPERATURE ( C) T A , MAXIMUM ALLOWABLE AMBIEN T TEMPERATURE ( C) 110 70 0.2 IT(AV) I 80 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE 0.2 0.3 0.4 0.5 85 0 0.1 0.2 0.3 0.4 0.5 IT(AV) (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.08/26/20 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board Figure 8. Power Dissipation MAXIMUM AVERAGE POWER P(AV),DISSI PATION (WATTS) 0.8 = 0.7 r T , TRANSIEN T THERMAL RESIST ANCE NORMALIZED 1.0 0.9 = 30 CONDUCTION ANGLE 0.6 60 90 0.5 0.4 dc 0.3 180 0.2 120 0.1 0 0 0.1 0.2 0.4 0.3 0.5 IT(AV) 0.1 0.01 0.0001 0.0010 .011 0.1 .0 10 100 t, TIME (SECONDS) Figure 10. Typical Gate Trigger Voltage vs Junction Temperature VGT , GATE TRIGGER VOLTAGE (VOLTS) 1.0 Figure 11. Typical Normalized Holding Current vs Junction Temperature 0.7 VAK = 12V R L = 100 0.6 0.5 0.4 0.3 -40- 20 04 20 06 0 80 110 TJ , JUNCTION TEMPERA TURE, ( C) Figure 12. Typical Range of VGT versus Measured IGT Figure 13. Typical Gate Trigger Current vs Junction Temperature V GT , GATE TRIGGER VOLTAGE (VOLTS) 0.7 0.65 0.6 0.55 0.5 VAK = 12V R L = 100 TJ = 25C 0.45 0.4 0.35 0.3 0.1 1.0 10 100 1000 IGT, GATE TRIGGER CURRENT ( A) (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.08/26/20 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Figure 14. Holding Current Range vs Gate-Cathode Resistance Figure 15. Exponential Static dv/dt vs. Junction Temperature and Gate-Cathode Termination Resistance 10000 100 10 IGT = 48 A IGT = 7 A 1.0 Vpk = 400V 1000 STATIC dv/dt (V/ S) IH , HOLDING CURRENT (mA) 5000 TJ = 25C 500 100 TJ = 25 50 10 125 5.0 50 110 1.0 75 0.5 0.1 1.0 10 1000 100 10,000 0.1 10 100,000 TJ = 110C 200V 1000 100V 400V 100 STATIC dv/dt (V/ S) STATIC dv/dt (V/ S) 500 10,000 100,000 10000 300V 1000 1000 Figure 17. Exponential Static dv/dt vs Gate-Cathode Capacitance and Resistance Figure 16. Exponential Static dv/dt vs Peak Voltage and Gate-Cathode Termination Resistance 10000 100 R GK R 50 V 50 500V 10 5.0 TJ = 110C 400 V (PEAK) 500 100 R GK = 100 50 10 R GK = 1.0k 5.0 1.0 10 100 1000 10,000 R GK 1.0 0.01 R GK = 10k 0.11 .0 10 100 CGK Figure 18. Exponential Static dv/dt vs Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity 10000 STATIC dv/dt (V/ S) 1000 500 100 50 10 IGT = 70 A IGT = 5 A IGT = 35 A 5.0 1.0 10 IGT = 15 A 100 1000 10,000 100,000 (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.08/26/20 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Dimensions Soldering Footprint 3. 8 0.15 D b1 2. 0 0.079 4 HE 12 E 3 2. 3 0.091 b e1 e C 2. 0 0.079 A 0.08 (0003 ) Dim A1 L1 Inches Millimeters Min Nom Max Min Nom Max A 1.50 1.63 1.75 0.060 0.064 0.068 A1 0.02 0.06 0.10 0.001 0.002 0.004 b 0.60 0.75 0.89 0.024 0.030 0.035 b1 2.90 3.06 3.20 0.115 0.121 0.126 c 0.24 0.29 0.35 0.009 0.012 0.014 D 6.30 6.50 6.70 0.249 0.256 0.263 E 3.30 3.50 3.70 0.130 0.138 0.145 e 2.20 2.30 2.40 0.087 0.091 0.094 e1 0.85 0.94 1.05 0.033 0.037 0.041 L1 1.50 1.75 2.00 0.060 0.069 0.078 HE 6.70 7.00 7.30 0.264 0.276 0.287 9 0 - 10 0 - 10 1. 5 0.059 MCR08MT1G mm inches 4 SOT-223 Case 318E Style 10 1 CR08c = x= A= Y= W= = AYW CR08x 1 Device Code B or M Assembly Location Year Work Week Pb-Free Packaging Note: Microdot may be in either location Ordering Information MCR08BT1G SCALE 6 :1 Part Marking System 1. Dimensions and Tolerancing per Ansi Y14.5M. 1982. 2. Controlling Dimension: Inch. Device 6. 3 0.248 2. 3 0.091 Pin Assignment Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000/Tape & Reel 1 Cathode 2 Anode 3 Gate 4 Anode 1000/Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.08/26/20