Original Creation Date: 06/26/95
Last Update Date: 02/11/99
Last Major Revision Date: 07/21/98
MNLM108A-X REV 1A1 MICROCIRCUIT DATA SHEET
OPERATIONAL AMPLIFIERS
General Description
The LM108A is a precision operational amplifier having specifications a factor of ten
better than FET amplifiers over a -55 C to +125 C temperature range.
The device operates with supply voltages from +2V to +20V and has sufficient supply
rejection to use unregulated supplies. Although the circuit is interchangeable with, and
uses the same compensation as, the LM101A, an alternate compensation scheme can be used to
make it particularly insensitive to power supply noise, and to make supply bypass
capacitors unnecessary.
The low current error of the LM108A makes possible many designs that are not practical
with conventional amplifiers. In fact, it operates from 10 Mohms source resistances,
introducing less error than devices such as the 709 with 10 Kohms sources. Integrators
with drifts less than 500 uV/sec, and analog time delays in excess of one hour, can be
made using capacitors no larger than 1uF.
NS Part Numbers
LM108AH/883
LM108AJ-8/883
LM108AJ/883
LM108AW/883
LM108AWG/883
Industry Part Number
LM108A
Prime Die
LM108
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MNLM108A-X REV 1A1
Features
- Maximum input bias current of 3.0 nA over temperature.
- Offset current less than 400 pA over temperature.
- Supply current of only 300 uA, even in saturation.
- Guraranteed drift characteristics.
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MICROCIRCUIT DATA SHEET
MNLM108A-X REV 1A1
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage +20V
Input Voltage
(Note 4) +15V
Power Dissipation
(Note 2) 500mW
Maximum Junction Temperature 150 C
Differential Input Current
(Note 3) +10mA
Output Short-Circuit Duration Continuous
Operating Temperature Range -55 C to +125 C
Storage Temperature Range -65 C to +150 C
Thermal Resistance
ThetaJA 159 C/W METAL CAN (Still Air) 86 C/W (500LF/Min Air flow) 94 C/W CERDIP, 14 Lead (Still Air) 55 C/W (500LF/Min Air flow) 123 C/W CERDIP, 8 Lead (Still Air) 68 C/W (500LF/Min Air flow) 225 C/W CERPACK, 10 Lead (Still Air) 142 C/W (500LF/Min Air flow) 225 C/W CERAMIC SOIC (Still Air) 142 C/W (500LF/Min Air flow)
ThetaJC 38 C/W METAL CAN 13 C/W CERDIP, 14 Lead 17 C/W CERDIP, 8 Lead 21 C/W CERPACK, 10 Lead 21 C/W CERAMIC SOIC
Package Weight
(Typical) 990mgMETAL CAN 2180mgCERDIP, 14 Lead 1090mgCERDIP, 8 Lead 225mgCERPACK, 10 Lead 210mgCERAMIC SOIC
Lead Temperature 260 C (Soldering, 10 seconds) 300 CH-Pkg (Soldering, 10 seconds)
ESD Tolerance
(Note 5) 2000V
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MNLM108A-X REV 1A1 MICROCIRCUIT DATA SHEET
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: The inputs are shunted with back-to-back diodes for overvoltage protection.
Therefore, excessive current will flow if a differential input voltage in excess of
1V is applied between the inputs unless some limiting resistance is used.
Note 4: For supply voltages less than +15V, the absolute maximum input voltage is equal to
the supply voltage.
Note 5: Human body model, 1.5K Ohms in series with 100pF.
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MNLM108A-X REV 1A1 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = +20V, Vcm = 0V
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vio Input Offset
Voltage Vcm = -15V -0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
Vcm = 15V -0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
-0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
Vcc = +5V -0.5 0.5 mV 1
Vcc = +5V -1.0 1.0 mV 2, 3
Iio Input Offset
Current Vcm = -15V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
Vcm = 15V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
-0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
Vcc = +5V -0.2 0.2 nA 1
Vcc = +5V -0.4 0.4 nA 2, 3
Iib+ Input Bias
Current Vcm = -15V -0.1 2 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
Vcm = 15V -0.1 2 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
-0.1 2 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
Vcc = +5V -0.1 2 nA 1
Vcc = +5V -1.0 3.0 nA 2
Vcc = +5V -0.1 3.0 nA 3
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MNLM108A-X REV 1A1 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = +20V, Vcm = 0V
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Iib- Input Bias
Current Vcm = -15V -0.1 2 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
Vcm = 15V -0.1 2 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
-0.1 2 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
Vcc = +5V -0.1 2 nA 1
Vcc = +5V -1.0 3.0 nA 2
Vcc = +5V -0.1 3.0 nA 3
PSRR Power Supply
Rejection Ratio +20V <= Vcc <= +5V 96 dB 1, 2,
3
CMRR Common Mode
Rejection Ratio -15V <= VCM <= 15V 96 dB 1, 2,
3
Ios+ Short Circuit Vcc = +15V -30 -1.0 mA 1, 2,
3
Ios- Short Circuit Vcc = +15V 1 30 mA 1, 2,
3
Icc Power Supply
Current 0.6 mA 1
0.4 mA 2
0.8 mA 3
Rin Input Resistance 2 30 M 1
Vin Input Voltage
Range Vcc = +15V 1 +14 V 1, 2
Vcc = +15V 1 +13.5 V3
1 +15 V 1, 2,
3
Delta
Vio/Delta
T
Temperature
Coeffient of
Input Offset
Voltage
2 5 uV/C 1, 2,
3
Delta
Iio/Delta
T
Temperature
Coeffient of
Input Offset
Current
2 2.5 pA/C 1, 2,
3
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MNLM108A-X REV 1A1 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = +20V, Vcm = 0V
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vop+ Output Voltage
Swing Vcc=+15V, Rl=10K Ohms 13 V 4, 5,
6
Vop- Output Voltage
Swing Vcc=+15V, Rl=10K Ohms -13 V 4, 5,
6
Avs+ Open Loop Voltage
Gain Vcc=+15V, Rl=10K Ohms, Vout= 0 to 10V 3 80 V/mV 4
Vcc=+15V, Rl=10K Ohms, Vout= 0 to 10V 3 40 V/mV 5, 6
Avs- Open Loop Voltage
Gain Vcc=+15V, Rl=10K Ohms, Vout= 0 to -10V 3 80 V/mV 4
Vcc=+15V, Rl=10K Ohms, Vout= 0 to -10V 3 40 V/mV 5, 6
TR Transient
Response Rise
Time
2 1 uS 7
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = +20V, Vcm = 0V. "Deltas not required on B-Level product. Deltas required for S-Level product ONLY
as specified on Internal Processing Instructions (IPI)."
Vio Input Offset
Voltage Vcm = 15V -0.25 0.25 mV 1
Iib+ Input Bias
Current Vcm = 15V -1 1 nA 1
Iib- Input Bias
Current Vcm = 15V -1 1 nA 1
Note 1: Parameter tested go-no-go only.
Note 2: Guaranteed parameter not tested.
Note 3: Datalog in K = V/mV.
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MICROCIRCUIT DATA SHEET
MNLM108A-X REV 1A1
Graphics and Diagrams
GRAPHICS# DESCRIPTION
06135HRA2 CERPACK (W), 10 LEAD (B/I CKT)
09556HR02 CERDIP (J), 14 LEAD (B/I CKT)
09557HRA4 METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (B/I CKT)
H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG)
J08ARL CERDIP (J), 8 LEAD (P/P DWG)
J14ARH CERDIP (J), 14 LEAD (P/P DWG)
P000253A CERAMIC SOIC (WG), 10 LEAD (PINOUT)
P000310A METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (PINOUT)
P000311A CERDIP (J), 14 LEAD (PINOUT)
P000312A CERDIP (J), 8 LEAD (PINOUT)
P000431A CERPACK (W), 10 LEAD (PINOUT)
W10ARG CERPACK (W), 10 LEAD (P/P DWG)
WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
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N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 10
2 9
3 8
4 7
5 6
N/C
N/C
IN-
IN+
N/C V-
OUTPUT
V+
COMP 2
COMP 1
LM108AWG
10 - LEAD CERAMIC SOIC
TOP VIEW
CONNECTION DIAGRAM
P000253A
N
N
N
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 10
2 9
3 8
4 7
5 6
N/C
N/C
IN-
IN+
N/C V-
OUTPUT
V+
COMP 2
COMP 1
LM108AW
10 - LEAD CERPACK
TOP VIEW
CONNECTION DIAGRAM
P000431A
MICROCIRCUIT DATA SHEET
MNLM108A-X REV 1A1
Revision History
Rev ECN # Rel Date Originator Changes
0CL M0001741 02/11/99 Barbara Lopez Changed: MNLM108A-X Rev. 0BL to MNLM108A-X Rev. 0CL.
On IIB+ subgroup 3 was (-1.0min, 3.0max), corrected to
read (-0.1min, 3.0max).
1A1 M0003235 02/11/99 Rose Malone Updated MDS: MNLM108A-X, Rev. 0CL to MNLM108A-X, Rev.
1A1, Full Release. Added Pinout and B/I Ckt graphics
and Thermal Data.
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