BC856BW - Infineon Technologies - Datasheet.Directory

BC 856W ... BC 860W

1 Sep-28-1999

PNP Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BC 846W, BC 847W, BC 848W

BC 849W, BC 850W (NPN)

1

3

VSO05561

2

Type Marking Pin Configuration Package

BC 856AW

BC 856BW

BC 857AW

BC 857BW

BC 857CW

BC 858AW

BC 858BW

BC 858CW

BC 859AW

BC 859BW

BC 859CW

BC 860BW

BC 860CW

3As

3Bs

3Es

3Fs

3Gs

3Js

3Ks

3Ls

4As

4Bs

4Cs

4Fs

4Gs

1 = B

2 = E

3 = C

SOT-323

BC 856W ... BC 860W

2 Sep-28-1999

Maximum Ratings

Parameter BC 856W BC 857W

BC 860W

Symbol BC 858W

BC 859W

Unit

Collector-emitter voltage 3045 V

VCEO 65

50Collector-base voltage 30

VCBO 80

Collector-emitter voltage 50 3080

VCES V

5 5 V

VEBO

Emitter-base voltage 5

DC collector current IC100 mA

Peak collector current ICM 200 mA

Peak base current IBM 200

Peak emitter current 200

IEM

Total power dissipation, TS = 124 °C Ptot 250 mW

Junction temperature T

j

150 °C

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Junction ambient 1) RthJA ≤240 K/W

Junction - soldering point RthJS ≤105

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BC856W

BC857/860W

BC858/859W

V(BR)CEO

65

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IB = 0

BC 856W

BC 857/860W

BC 858/859W

V(BR)CBO

80

50

30

-

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 1cm2 Cu

BC 856W ... BC 860W

3 Sep-28-1999

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

BC 856W

BC 857/860W

BC 858/859W

V(BR)CES

80

50

30

-

V

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO 5 - -

Collector cutoff current

VCB = 30 V, IE = 0

ICBO - - 15 nA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO - - 5 µA

DC current gain 1)

IC = 10 µA, VCE = 5 V

hFE-group A

hFE-group B

hFE-group C

hFE

-

140

250

480

-

DC current gain 1)

IC = 2 mA, VCE = 5 V

hFE-group A

hFE-group B

hFE-group C

hFE

125

220

420

180

290

520

250

475

800

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

75

250

300

650

mV

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

850

-

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

-

650

-

750

820

1) Pulse test: t ≤ 300µs, D = 2%

BC 856W ... BC 860W

4 Sep-28-1999

Electrical Characteristics at TA = 25 °C, unless otherwise specified.

Parameter ValuesSymbol Unit

typ. max.min.

AC characteristics

fT- MHz

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

-250

pF

Collector-base capacitance

VCB = 10 V, f = 1 MHz

3 5-

Ccb

1510-

Ceb

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

2.7

4.5

8.7

-

h11e

hFE-gr.A

hFE-gr.B

hFE-gr.C

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

kΩ

-

Open-circuit reverse voltage transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

h12e

hFE-gr.A

hFE-gr.B

hFE-gr.C

1.5

2

3

-

10-4

h21e

-

hFE-gr.A

hFE-gr.B

hFE-gr.C

Short-circuit forward current transf.ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

200

330

600

-

hFE-gr.A

hFE-gr.B

hFE-gr.C

h22e

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz

18

30

60

-

µS

-

dB

Noise figure

IC = 200 µA, VCE = 5 V, RS = 2 kΩ,

f = 1 kHz, ∆ f = 200 Hz

F

BC 856W

BC 857W

BC 858W

- 10-

Noise figure

IC = 200 µA, VCE = 5 V, RS = 2 kΩ,

f = 1 kHz, ∆ f = 200 Hz

4

BC 859W

BC 860W

-

1

F

Equivalent noise voltage

IC = 200 µA, VCE = 5 V, RS = 2 kΩ,

f = 10 ... 50 Hz

BC 860W

Vn- - 0.11 µV

BC 856W ... BC 860W

5 Sep-28-1999

Collector-base capacitance CCB = f (VCBO

)

Emitter-base capacitance CEB = f (VEBO)

0

4

10 510 10

EHP00376

VCB0

CEB0

V

6

2

EB0

V

EBO

C

8

10

pF

12

CB0

C

-1 0 1

CCBO

(

)

BC 856...860

)

Total power dissipation Ptot = f (TA*;TS)

* Package mounted on epoxy

0 20 40 60 80 100 120 °C 150

TA,TS

0

50

100

150

200

mW

300

P

tot

TS

TA

Permissible pulse load

Ptotmax / PtotDC = f (tp)

10

EHP00377

-6

0

10

5

D

=

5

10

1

5

10

2

3

10

-5

10

-4

10

-3

10

-2

10

0

s

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t

p

=

DT

t

p

T

tot max

tot

P

DC

P

p

t

Transition frequency fT = f (IC)

VCE = 5V

10 10 10 10

EHP00378

f

mA

MHz

-1 0 1 2

5

T

3

10

2

1

10

5

C

Ι

BC 856W ... BC 860W

6 Sep-28-1999

Collector cutoff current ICBO = f (TA)

VCB = 30V

10 0 50 100 150

EHP00381

TA

5

10

nA

10

Ι

CB0

5

10

4

3

2

1

0

-1

max

typ

C

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 20

10 0

EHP00380

VCEsat

10

mA

10

2

1

0

-1

5

V

0.3 0.5

100

25

-50

0.1 0.2 0.4

C

Ι

C

DC current gain hFE = f (IC)

VCE = 5V

10 10 10 10

EHP00382

h

mA

-2 -1 12

FE

3

10

2

0

10

5

10

1

0

10

5

555

100

25

-50

C

Ι

C

Base-emitter saturation voltage

IC = f (VBEsat), hFE = 20

0

10

EHP00379

BEsat

V

0.6 V 1.2

-1

10

0

10

1

2

10

5

Ι

C

mA

0.2 0.4 0.8

C

25

C

100

C

-50

C

BC 856W ... BC 860W

7 Sep-28-1999

h parameter he = f (IC) normalized

VCE = 5V

10 10 10

BC 856...860 EHP00383

mA

-1 0 1

5

e

h

2

10

-1

10

1

10

0

5

h11e

h12e

h21e

h22e

VCE = 5 V

C

Ι

h parameter he = f (VCE) normalized

IC = 2mA

00102030

BC 856...860 EHP00384

V

CE

h

e

V

1.0

0.5

1.5

2.0

= 2 mA

h

11

12

h

22

C

Ι

Noise figure F = f (VCE)

IC = 0.2mA, RS = 2kΩ, f = 1kHz

0

10 10 10 10

BC 856...860 EHP00385

VCE

F

V

10

5

15

dB

20

-1012

5 5

Noise figure F = f (f)

IC = 0.2mA, VCE = 5V, RS = 2kΩ

10 10 10 10

BC 856...860 EHP00386

F

kHz

dB

-2 -1 1 2

20

10

0

5

15

f

0

10

BC 856W ... BC 860W

8 Sep-28-1999

Noise figure F = f (IC)

VCE = 5V, f = 1kHz

10 10 10 10

BC 856...860 EHP00388

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M

100 k

10 k

dB

500

1 k

ΩΩΩ

S

R

Ω

C

Ι

Noise figure F = f (IC)

VCE = 5V, f = 120Hz

10 10 10 10

BC 856...860 EHP00387

F

mA

-3 -2 0 1

20

10

0

5

15

-1

10

= 1 M 100 k 10 k

dB

500

1 k

ΩΩΩ

S

R

Ω

C

Ι

Noise figure F = f (IC)

VCE = 5V, f = 10kHz

10 10 10 10

BC 856...860 EHP00389

mA

-3 -2 0 1

20

10

0

5

15

-1

10

dB

F

Ι

C

= 1 MRSΩ

Ω

100 k

Ω

10 k

500 Ω

Ω

1 k