Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087) BPW 34 FA BPW 34 FAS BPW 34 FAS (E9087) Wesentliche Merkmale * Speziell geeignet fur den Wellenlangenbereich von 830 nm bis 880 nm * Kurze Schaltzeit (typ. 20 ns) * DIL-Plastikbauform mit hoher Packungsdichte * BPW 34 FAS/(E9087): geeignet fur Vapor-Phase Loten und IR-Reflow Loten Features * Especially suitable for the wavelength range of 830 nm to 880 nm * Short switching time (typ. 20 ns) * DIL plastic package with high packing density * BPW 34 FAS/(E9087): Suitable for vapor-phase and IR-reflow soldering Anwendungen * IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Geratefernsteuerung * Lichtschranken fur Gleich- und Wechsellichtbetrieb Applications * IR-remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment * Photointerrupters Typ Type Bestellnummer Ordering Code BPW 34 FA Q62702-P1129 BPW 34 FAS Q62702-P463 BPW 34 FAS (E9087) Q62702-P1829 2000-01-01 1 OPTO SEMICONDUCTORS BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087) Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, = 870 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotostrom Photocurrent VR = 5 V, Ee = 1 mW/cm2 Ip 50 ( 40) A Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 730 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area LxB 2.65 x 2.65 mm x mm Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 ( 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity S 0.65 A/W Quantenausbeute Quantum yield 0.93 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 320 ( 250) mV 2000-01-01 LxW 2 OPTO SEMICONDUCTORS BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087) Kennwerte (TA = 25 C, = 870 nm) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 23 A Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr, tf 20 ns Durchlaspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.03 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.9 x 10- 14 Nachweisgrenze, VR = 10 V, Detection limit D* 6.8 x 1012 2000-01-01 3 W -----------Hz cm x Hz -------------------------W OPTO SEMICONDUCTORS BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087) Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee) Relative Spectral Sensitivity Srel = f () OHF01430 100 P Srel % OHF01428 10 3 A 10 4 mV VO Total Power Dissipation Ptot = f (TA) OHF00958 160 mW Ptot 140 80 10 2 10 3 70 VO 100 60 10 1 50 10 2 40 120 P 80 60 30 10 0 10 1 -1 0 40 20 20 10 10 0 400 600 800 1000 nm 1200 10 0 10 2 W/cm 2 10 10 4 Dark Current Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 0 0 20 40 60 Ee IR = f (VR), E = 0 R 10 1 OHF00081 100 C pA 80 C 100 TA Dark Current IR = f (TA), VR = 10 V, E = 0 OHF00082 10 3 R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 C 100 TA Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2000-01-01 0.8 0.6 0.4 0 20 40 60 80 100 4 120 OPTO SEMICONDUCTORS BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087) Mazeichnung Package Outlines BPW 34 FA 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 ... 5 1.8 1.4 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GEO06643 BPW 34 FAS 1.1 0.9 6.7 6.2 0...5 0.2 0.1 0...0.1 0.3 1.2 1.1 Chip position 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.8 0.2 Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06863 Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. 2000-01-01 5 OPTO SEMICONDUCTORS BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087) BPW 34 FAS (E9087) 1.1 0.9 6.7 6.2 0...5 0.2 0.1 0...0.1 0.3 1.2 1.1 Chip position 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.8 0.2 Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06916 Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. 2000-01-01 6 OPTO SEMICONDUCTORS