VS-SD303C..C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 350 A FEATURES * * * * * * * * * * * A-PUK (DO-200AA) PRIMARY CHARACTERISTICS High power fast recovery diode series 1.0 s to 2.0 s recovery time High voltage ratings up to 2500 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC(R) A-PUK (DO-200AA) Maximum junction temperature 125 C Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS IF(AV) 350 A Package A-PUK (DO-200AA) Circuit configuration Single * Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER VS-SD303C..C TEST CONDITIONS IF(AV) S15 S20 350 350 350 A 55 55 55 C 550 550 550 A 25 25 25 C 50 Hz 5770 5770 5770 60 Hz 6040 6040 6040 50 Hz 166 166 166 60 Hz 152 152 152 Range 400 to 1000 1200 to 1600 2000 to 2500 V 1.0 1.5 2.0 s Ths IF(RMS) Ths IFSM I2t VRRM trr UNITS S10 TJ TJ 25 25 25 -40 to +125 -40 to +125 -40 to +125 A kA2s C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD303C..S10C VS-SD303C..S15C VS-SD303C..S20C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 20 2000 2100 25 2500 2600 IRRM MAXIMUM AT TJ = 125 C mA 35 Revision: 15-Jan-18 Document Number: 93174 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD303C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS current IF(RMS) 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle , non-repetitive forward current t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t No voltage reapplied UNITS A 55 (75) C 550 5770 No voltage reapplied 100 % VRRM reapplied VALUES 350 (175) 4850 Sinusoidal half wave, initial TJ = TJ maximum 5080 166 152 100 % VRRM reapplied 107 t = 0.1 to 10 ms, no voltage reapplied 1660 t = 10 ms t = 8.3 ms Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.14 VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.63 Low level of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.14 High level of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.77 Ipk = 1100 A, TJ = 25 C; tp = 10 ms sinusoidal wave 2.26 VFM kA2s 117 High level value of threshold voltage Maximum forward voltage drop A 6040 kA2s V mW V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 C CODE Ipk SQUARE PULSE (A) trr AT 25 % IRRM (s) S10 TYPICAL VALUES AT TJ = 125 C TEST CONDITIONS dI/dt (A/s) Vr (V) trr AT 25 % IRRM (s) Qrr (C) Irr (A) 2.4 52 33 1.0 S15 1.5 S20 2.0 750 25 - 30 2.9 90 44 3.2 107 46 IFM trr t dir dt Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS VALUES TJ -40 to 125 TStg -40 to 150 RthJ-hs DC operation single side cooled 0.16 DC operation double side cooled 0.08 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet UNITS C K/W 4900 (500) N (kg) 70 g A-PUK (DO-200AA) RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 0.010 0.012 0.016 0.024 0.042 0.011 0.013 0.016 0.024 0.042 0.008 0.013 0.018 0.025 0.042 0.008 0.013 0.018 0.025 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 15-Jan-18 Document Number: 93174 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD303C..C Series www.vishay.com 130 SD303C..C Series (Sin gle Side Cooled) R th J-hs (DC) = 0.16 K/W 120 110 C o nduc tio n A ng le 100 90 180 80 30 60 70 90 120 60 0 20 40 60 80 100 120 140 160 180 Maximum Allow able Heatsink Temperature (C) Maxim um Allow able Heatsink Tem perature (C) 130 Vishay Semiconductors SD303C..C Series (D ouble Side Cooled) R th J- hs (DC) = 0.08 K/W 120 110 100 90 C o ndu c tio n Pe rio d 80 70 30 60 90 120 DC 0 100 200 300 400 500 Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 1 30 8 00 S D 3 0 3 C ..C S e rie s (S in g le Sid e C o o le d ) R thJ-hs (D C ) = 0 .1 6 K /W 1 20 1 10 1 00 C o ndu c tio n P e rio d 90 30 80 60 90 70 120 180 60 DC 50 0 50 10 0 150 2 00 250 3 00 1 8 0 1 2 0 90 60 30 7 00 6 00 5 00 3 00 C o nduc tio n An g le 2 00 SD 3 0 3 C ..C Se rie s TJ = 1 2 5C 1 00 0 0 SD303C..C Series (D ouble Side Cooled) R thJ-h s (DC) = 0.08 K/W 120 110 100 90 C o nduc tio n A ng le 80 70 60 50 30 60 90 120 180 40 0 50 100 150 200 250 300 350 400 Average Forward Curren t (A) Fig. 3 - Current Ratings Characteristics 50 1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00 A v e ra g e F o rw a rd C u rre n t (A ) Fig. 5 - Forward Power Loss Characteristics 1 00 0 M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W ) Fig. 2 - Current Ratings Characteristics R M S Lim it 4 00 A v e ra g e F o r w a rd C u rre n t (A ) 130 600 Average Forwa rd Curren t (A) M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W ) M a x im um A llo w a b le H ea t sin k T e m p e ra t u re ( C ) 180 40 Averag e Forw ard Current (A) Maxim um Allow able Heatsink Tem perature (C) 60 50 DC 1 8 0 1 2 0 90 60 30 9 00 8 00 7 00 6 00 5 0 0 R M S Lim it 4 00 C o ndu ct io n Pe rio d 3 00 SD 3 0 3 C ..C Se rie s T J = 1 2 5C 2 00 1 00 0 0 100 2 00 3 00 400 5 00 6 00 A v e ra g e Fo rw a rd C u r re n t (A ) Fig. 6 - Forward Power Loss Characteristics Revision: 15-Jan-18 Document Number: 93174 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD303C..C Series www.vishay.com 10000 A t A n y Ra t e d Lo a d C o n d it io n A n d W ith R a t e d V RRM A p p lie d F o llo w in g Su rg e . In itia l TJ = 1 2 5C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 50 0 0 45 0 0 SD 3 0 3 C ..C Se r ie s In st a n t a n e o u s Fo rw a rd C urre n t (A ) P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A ) 55 0 0 Vishay Semiconductors 40 0 0 35 0 0 30 0 0 25 0 0 SD 3 0 3 C ..C Se r ie s 1 000 TJ = 2 5 C 100 TJ = 1 2 5 C 20 0 0 10 1 10 0 1 00 4500 (K / W ) 4000 3500 3000 2500 2000 S D 3 0 3 C ..C Se rie s 1500 0.01 0.1 4 5 6 7 8 St e a d y S ta t e V a lu e R thJ-hs = 0 .1 6 K / W thJ-hs 5000 3 1 M a x im u m N o n R e p e t itiv e S u rg e C u rre n t V e r su s P u lse T ra in D u ra t io n . In itia l TJ = 1 2 5 C N o V o lt a g e R e a p p lie d R a t e d V RR MR e a p p lie d T ra n sie n t T h e rm a l I m p e d a n c e Z P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A ) 5500 2 Fig. 9 - Forward Voltage Drop Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6000 1 In sta n t a n e o us Fo rw a rd V o lta g e (V ) N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N ) 1 ( Sin g le Sid e C o o le d) 0 .1 R thJ-h s = 0 .0 8 K / W ( D o u b le S id e C o o le d ) ( D C O p e ra tio n ) 0 .0 1 SD 3 0 3 C ..C Se rie s 0 .0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 10 0 Sq u a re W a v e Pu lse D ur at io n ( s) P u lse T ra in D u ra t io n (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 1 20 V F o rw a rd R e c o v e ry ( V ) 1 00 FP I T = 1 2 5C J 80 60 TJ = 2 5C 40 20 S D 3 0 3 C ..S2 0 C Se rie s 0 0 20 0 40 0 600 8 00 10 0 0 12 00 1 40 0 1 60 0 18 0 0 200 0 R at e O f f F a ll O f F o rw a rd C u rre n t d i/ d t ( A / u se c ) Fig. 11 - Typical Forward Recovery Characteristics Revision: 15-Jan-18 Document Number: 93174 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD303C..C Series www.vishay.com Vishay Semiconductors 3 .6 SD 3 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 C , V r = 3 0 V 2 .6 I FM = 750 A 2 .4 Squ are Pu lse 2 .2 4 00 A 2 1 .8 200 A 1 .6 10 M a x im u m R e v e rse R e c o v e ry T im e - T rr ( s) M a xim um R e ve rse R e c o v e ry T im e - Trr ( s) 2 .8 SD 3 0 3 C ..S 1 5 C S e rie s TJ = 1 2 5 C , V r = 3 0 V 3 .2 I FM = 75 0 A 2 .8 Sq ua re Pulse 2 .4 4 00 A 2 20 0 A 1 .6 10 100 100 R ate O f Fall O f Fo rwa rd C urre nt - di/dt (A /s) R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /s) Fig. 12 - Recovery Time Characteristics Fig. 15 - Recovery Time Characteristics 170 I FM = 750 A 13 0 Squ are Pulse 12 0 11 0 10 0 40 0 A 90 80 20 0 A 70 60 50 40 S D 3 0 3 C ..S 1 0 C Se rie s TJ = 1 2 5 C , V r = 3 0 V 30 20 10 0 20 40 60 80 100 Ra te O f Fall O f Fo rw ard Cu rrent - d i/dt (A /s) Fig. 13 - Recovery Charge Characteristics M a xim u m R e v e rse R e co v e ry C h a rg e - Q r r ( C ) M a x im um Re v e rse R e c o v e ry C h a rg e - Q rr ( C ) 14 0 4 00 A 80 70 20 0 A 60 50 40 30 140 130 120 SD 3 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 C , V r = 3 0 V 20 20 30 40 5 0 60 70 80 90 10 0 Rate O f Fall O f Fo rwa rd Curre n t - di/d t (A/s) Fig. 14 - Recovery Current Characteristics 4 00 A 110 100 20 0 A 90 80 70 60 SD 3 0 3C ..S 1 5 C S e rie s TJ = 1 2 5 C , V r = 3 0 V 50 10 20 30 4 0 50 60 70 80 9 0 100 Fig. 16 - Recovery Charge Characteristics M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr ( A ) Square Pulse Squa re Pulse 150 1 30 I FM = 75 0 A I FM = 75 0 A Rate O f Fa ll O f Fo rw ard Current - di/dt (A /s) 1 00 90 160 1 20 I FM = 7 50 A Sq uare Pu lse 1 10 1 00 90 4 00 A 80 70 20 0 A 60 50 40 30 20 SD 3 0 3 C ..S1 5 C Se rie s TJ = 1 2 5 C , V r = 3 0 V 10 1 0 20 30 40 50 60 70 80 90 1 00 R ate O f Fall O f Fo rw ard Cu rre nt - di/d t (A/s) Fig. 17 - Recovery Current Characteristics Revision: 15-Jan-18 Document Number: 93174 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD303C..C Series www.vishay.com Vishay Semiconductors 3 00 M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( C ) Maxim um Rever se Recov ery Tim e - Trr (s) 3.6 SD30 3C..S20C Series TJ = 125 C, V r = 30V 3.4 I FM = 75 0 A 3.2 Sq uare Pulse 3 4 00 A 20 0 A 2.8 2.6 2.4 10 10 0 I FM = 7 50 A Sq ua re Pulse 2 50 2 00 4 00 A 1 50 20 0 A 1 00 SD 3 0 3 C ..S2 0 C Se rie s TJ = 1 2 5 C , V r = 3 0 V 50 10 20 30 4 0 50 60 70 80 90 100 Rate O f Fall O f Fo rw ard Current - di/dt (A /s) Rate O f Fall O f Fo rwa rd Curre nt - di/dt (A /s) Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics M a x im um R e v e rse R e c o v e ry C u rre n t - Irr (A ) 130 I FM = 7 50 A 120 Sq uare Pu lse 110 100 4 00 A 90 80 2 00 A 70 60 50 SD 3 0 3 C ..S 2 0 C S e rie s TJ = 1 2 5 C , V r = 3 0 V 40 30 20 10 20 3 0 40 50 60 70 80 90 10 0 Rate O f Fall O f Forw ard Current - di/d t ( A/s) Fig. 20 - Recovery Current Characteristics 1 E4 P e a k F o rw a rd C u rre n t (A ) 4 1 10 2 0 jo ule s pe r pulse 20 jo u le s p er pulse 2 1 0 .4 1 E3 0 .2 0 .2 0 .1 2 4 10 0.4 0.1 0. 04 0 .02 1 E2 0.0 1 tp 1 E1 1 E1 SD 3 0 3C ..S10 C S e ri es Sin uso ida l Pul se TJ = 1 25C , V RRM = 1 1 2 0 V d v /d t = 1 0 0 0V / s 1E 2 tp 1 E3 P u lse B a se w id t h ( s) 1 E4 1E1 SD 30 3 C ..S1 0 C Se rie s Tr ape zo id al Pul se TJ = 1 2 5C , V RRM = 1 1 2 0V d v / dt = 1 0 00 V/ s ; di/ dt=5 0 A/ s 1 E2 1E3 1E4 P ulse Ba se w id t h ( s) Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics Revision: 15-Jan-18 Document Number: 93174 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD303C..C Series www.vishay.com Vishay Semiconductors 1E4 20 jo ules pe r p ulse 20 jo ule s per p ulse P e a k F o rw a rd C u rr e n t (A ) 10 2 4 2 1 10 1 0 .4 0 .2 0 .1 1E3 4 0 .4 0.2 0 .04 0.0 2 1E2 tp 1E1 1E 1 SD 3 0 3 C..S15 C Se ri es Sinu so idal P ulse TJ = 1 2 5C, V RRM = 1 7 6 0 V dv / dt = 10 0 0 V/ s 1E2 tp 1E 3 SD 3 0 3 C..S1 5 C Se rie s T rape zo idal Pu lse T J = 1 2 5C , V R RM = 1 7 6 0V d v/ dt = 1 0 0 0 V/ s ; di / dt= 5 0 A/ s 1E1 1 E4 1 E2 1 E3 1 E4 P u lse B a se w id th ( s) Pu lse B a se w id t h ( s) Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 10 20 jo ule s per p ulse 20 jo u le s per pu lse 10 Pe a k F o rw a rd C ur re nt ( A ) 4 4 2 2 1 1E3 1 0. 4 0 .4 0.2 0.1 tp 1E1 1E1 0 .2 0. 04 1E2 S D3 0 3 C..S2 0 C Se rie s Sin uso ida l Pu lse TJ = 1 2 5C, V RRM= 1 7 60 V dv / dt = 1 0 0 0 V/ s 1E2 tp 1 E3 SD 3 0 3 C..S2 0 C Se rie s T rape zo ida l Pul se TJ = 1 2 5C , V R R M = 1 7 6 0 V dv / dt = 1 0 0 0 V/ s ; di / dt= 5 0 A/ s 1E1 1 E4 1 E2 1E 3 1 E4 P u lse B a se w id th ( s) Pu lse B a se w id t h ( s) Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics ORDERING INFORMATION TABLE Device code VS- SD 30 3 C 25 S20 C 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - trr code (see Recovery Characteristics table) 8 - C = PUK case A-PUK (DO-200AA) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95248 Revision: 15-Jan-18 Document Number: 93174 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-200AA 42 (1.65) DIA. MAX. DIMENSIONS in millimeters (inches) 3.5 (0.14) 0.1 (0.004) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 25.27 (0.99) DIA. MAX. 2 places 0.3 (0.01) MIN. both ends C 14 (0.55) MAX. A 34.42 (1.36) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95248 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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