VS-SD303C..C Series
www.vishay.com Vishay Semiconductors
Revision: 15-Jan-18 1Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Recovery Diodes
(Hockey PUK Version), 350 A
FEATURES
• High power fast recovery diode series
• 1.0 μs to 2.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC® A-PUK (DO-200AA)
• Maximum junction temperature 125 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IF(AV) 350 A
Package A-PUK (DO-200AA)
Circuit configuration Single
A-PUK (DO-200AA)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VS-SD303C..C UNITS
S10 S15 S20
IF(AV)
350 350 350 A
Ths 55 55 55 °C
IF(RMS)
550 550 550 A
Ths 25 25 25 °C
IFSM
50 Hz 5770 5770 5770 A
60 Hz 6040 6040 6040
I2t50 Hz 166 166 166 kA2s
60 Hz 152 152 152
VRRM Range 400 to 1000 1200 to 1600 2000 to 2500 V
trr
1.0 1.5 2.0 μs
TJ25 25 25 °C
TJ-40 to +125 -40 to +125 -40 to +125
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
VS-SD303C..S10C
04 400 500
35
08 800 900
10 1000 1100
VS-SD303C..S15C
12 1200 1300
14 1400 1500
16 1600 1700
VS-SD303C..S20C 20 2000 2100
25 2500 2600
VS-SD303C..C Series
www.vishay.com Vishay Semiconductors
Revision: 15-Jan-18 2Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at heatsink temperature IF(AV) 180° conduction, half sine wave
Double side (single side) cooled
350 (175) A
55 (75) °C
Maximum RMS current IF(RMS) 25 °C heatsink temperature double side cooled 550
A
Maximum peak, one-cycle ,
non-repetitive forward current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ
maximum
5770
t = 8.3 ms 6040
t = 10 ms 100 % VRRM
reapplied
4850
t = 8.3 ms 5080
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
166
kA2s
t = 8.3 ms 152
t = 10 ms 100 % VRRM
reapplied
117
t = 8.3 ms 107
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1660 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.14 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.63
Low level of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.14 mW
High level of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.77
Maximum forward voltage drop VFM Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 2.26 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(μs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
Vr
(V)
trr AT 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
S10 1.0
750 25 - 30
2.4 52 33
S15 1.5 2.9 90 44
S20 2.0 3.2 107 46
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.16 K/W
DC operation double side cooled 0.08
Mounting force, ± 10 % 4900 (500) N (kg)
Approximate weight 70 g
Case style See dimensions - link at the end of datasheet A-PUK (DO-200AA)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.011 0.008 0.008
TJ = TJ maximum K/W
120° 0.012 0.013 0.013 0.013
90° 0.016 0.016 0.018 0.018
60° 0.024 0.024 0.025 0.025
30° 0.042 0.042 0.042 0.042
IFM trr
dir
dt
IRM(REC)
Qrr
t
VS-SD303C..C Series
www.vishay.com Vishay Semiconductors
Revision: 15-Jan-18 3Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
30°
60° 90°
120°
180°
Averag e Forw ard Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD303C..C Series
(Single Side Cooled)
R (D C ) = 0.1 6 K/ W
th J-hs
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maxim um Allow able Heatsink Temperature (°C)
SD 303C ..C Series
(Single Side C oo led)
R (D C ) = 0 . 1 6 K /W
thJ-hs
Conduction Period
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400
30° 60° 90° 120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD303C..C Series
(Double Side Cooled)
R (D C ) = 0 .08 K/W
thJ-h s
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD303C..C Series
(D ouble Side Cooled)
R (DC) = 0.08 K/W
th J- hs
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RMS Limit
Conduction Angle
SD 3 03C ..C Se rie s
T = 125°C
J
0
100
200
300
400
500
600
700
800
900
1000
0100200300400500600
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Lim it
Maximum Average Forward Power Loss (W )
Conduction Period
SD 303 C..C Se rie s
T = 125°C
J
VS-SD303C..C Series
www.vishay.com Vishay Semiconductors
Revision: 15-Jan-18 4Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 11 - Typical Forward Recovery Characteristics
200 0
250 0
300 0
350 0
400 0
450 0
500 0
550 0
001011
N um be r O f E qua l Am p li tu d e H a lf C yc le C urrent P uls es (N )
Peak Half Sine W ave Forward Current (A)
Initial T = 12 5°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
SD 30 3C ..C Ser ies
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Initial T = 125 °C
N o V ol t a g e R e a p p l ie d
Ra te d V Reapp lie d
RRM
J
V e r su s P u lse T r a in D u r a t io n .
M a x im um N on Re p etitive S urg e C u rrent
SD303C..C Series
10
100
1000
10000
01 23 456 78
Insta nta neo us Fo rw a rd C urre nt (A )
Instantaneous Forward Voltage (V)
T = 25 °C
T = 125 ° C
J
J
SD303C ..C Series
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Squ a re W a ve Pulse D uratio n (s)
thJ-hs
Tran sient Therm al Impedance Z (K/W)
Stea d y State V alu e
R = 0.1 6 K/W
(Sin gle Side C oole d)
R = 0.0 8 K/W
(Double Side C ooled)
(D C Ope ration )
thJ-hs
thJ-h s
SD 303 C ..C Se rie s
0
20
40
60
80
100
120
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
Rate O ff F a ll Of F orw a rd C urrent d i/d t (A/u se c)
T = 125°C
T = 25°C
J
J
SD 303C ..S20C Series
I
V
FP
VS-SD303C..C Series
www.vishay.com Vishay Semiconductors
Revision: 15-Jan-18 5Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
1.6
1.8
2
2.2
2.4
2.6
2.8
00101
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD 303C ..S10C Serie s
T = 125 °C, V = 30V
J
r
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0 20406080100
Maximum Reverse Recovery Charge - Qrr (µC)
Ra te O f Fall Of Fo rward Cu rrent - d i/dt (A/µs)
400 A
200 A
I = 750 A
Sq u a re P u l s e
FM
SD303C..S10C Series
T = 125 °C , V = 30V
J
r
20
30
40
50
60
70
80
90
100
20 30 40 50 60 70 80 90 100
M a xim um Rev erse R e cov ery C urren t - Irr (A )
Rate Of Fall Of Fo rwa rd Curren t - di/d t (A/µs)
400 A
200 A
I = 75 0 A
Square Pulse
FM
SD 303C..S10C Series
T = 1 2 5 °C , V = 3 0 V
r
J
1.6
2
2.4
2.8
3.2
3.6
00101
Rate Of Fa ll Of Forward Current - di/dt (A/µs)
M axim um Reve rse Recove ry Tim e - Trr (µs)
400 A
200 A
I = 75 0 A
Sq u a re P ulse
FM
SD303C..S15C Series
T = 125 °C , V = 30V
r
J
50
60
70
80
90
100
110
120
130
140
150
160
170
10 20 30 40 50 60 70 80 90 100
M axim um Reverse Recovery Charge - Qrr (µC)
Ra te Of Fa ll O f Forw a rd Current - di/d t (A /µs )
400 A
200 A
I = 75 0 A
Sq u a re P ulse
FM
SD303C..S15C Series
T = 125 °C, V = 30V
J
r
10
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M a xim u m R ev erse R e cov ery C urre n t - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 7 50 A
Sq u a re P u ls e
FM
SD 3 03C ..S15 C Se rie s
T = 125 °C, V = 30V
J
r
VS-SD303C..C Series
www.vishay.com Vishay Semiconductors
Revision: 15-Jan-18 6Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
2.4
2.6
2.8
3
3.2
3.4
3.6
00101
Rate Of Fall Of Forwa rd Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD303C..S20C Series
T = 125 °C, V = 30V
J
r
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq ua re Pulse
FM
SD 3 03C ..S2 0C Se rie s
T = 1 25 ° C , V = 3 0 V
J
r
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M a x im um R eve rse Rec o very C u rrent - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq uare Pulse
FM
SD303C ..S20C Serie s
T = 125 °C, V = 30V
J
r
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
0.1
Pulse Basewidth (µs)
Peak Forward Current (A)
4
dv/dt = 1000V/µs
Sinusoida l Pulse
20 joules per pulse
10
0.4
0.2
0.04
0.02
0.01
SD303C..S10C S eries
T = 125°C , V = 1120V
J
RR M
tp
1E1 1E2 1E3 1E4
12
0.1
Pulse Basewidth (µs)
4
20 jou les p er pulse
10
0.4
0.2
Tr ape zoid a l Pul se
dv/dt = 1000V/µs; di/dt=50A/µs
SD303C..S10C Series
T = 125°C, V = 1120V
J
RRM
tp
VS-SD303C..C Series
www.vishay.com Vishay Semiconductors
Revision: 15-Jan-18 7Document Number: 93174
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95248
1E1
1E2
1E3
1E4
1E1 1E2 1E 3 1E4
1
2
0.1
Pulse B a sew id th (µs)
Peak Forward Current (A)
4
dv/dt = 1000V/µs
Sinusoidal Pulse
20 joules pe r p ulse
10
0.4
0.2
0.04
0.02
SD303C..S15C Series
T = 125°C, V = 1760V
J
RRM
tp
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
4
20 jo ules per p ulse
10
0.4
0.2
Trapezoidal Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
T = 125°C, V = 1760V
J
RRM
SD303C..S15C Series
tp
1E1
1E2
1E3
1E4
1E1 1E2 1 E3 1E4
1
2
0.1
Pulse B a sew idth (µs)
Peak Forw ard Current (A)
4
dv/dt = 1000V/µs
Sinusoida l Pulse
20 joules per pulse
10
0.4
0.2
0.04
T = 125°C, V = 1760V
J
RR M
SD303C..S20C Series
tp
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
4
20 joules per p ulse
10
0.4
0.2
Trapezoidal Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
SD303C..S20C Series
T = 125°C, V = 1760V
J
RRM
tp
1
- Diode
2
- Essential part number
3
- 3 = fast recovery
4
- C = ceramic PUK
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-t
rr code (see Recovery Characteristics table)
7
8
- C = PUK case A-PUK (DO-200AA)
Device code
51 32 4 6 7 8
SDVS- 30 3 C 25 S20 C
- Vishay Semiconductors product
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 12-Jul-17 1Document Number: 95248
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DO-200AA
DIMENSIONS in millimeters (inches)
42 (1.65) DIA. MAX.
3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.3 (0.01) MIN.
both ends
34.42 (1.36) DIA. MAX.
14 (0.55) MAX.
25.27 (0.99) DIA. MAX.
2 places
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Note:
A = Anode
C = Cathode
A
C
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
