BLF578 Power LDMOS transistor Rev. 02 -- 4 February 2010 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 225 50 1200 24 71 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1200 W Power gain = 24 dB Efficiency = 71 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applications BLF578 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF578 Package Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 110 V VGS gate-source voltage -0.5 +11 V ID drain current - 88 A Tstg storage temperature -65 +150 C Tj junction temperature - 225 C BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 2 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Rth(j-c) Zth(j-c) Parameter Conditions thermal resistance from junction to case Tj = 150 C transient thermal impedance from junction to case Tj = 150 C; tp = 100 s; = 20 % [1] Tj is the junction temperature. [2] Rth(j-c) is measured under RF conditions. [3] See Figure 1. Typ Unit [1][2] 0.14 K/W [3] 0.04 K/W 001aak924 0.18 Zth(j-c) (K/W) (7) 0.12 (6) 0.06 (5) (3) (4) (2) (1) 0 10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) = 1 % (2) = 2 % (3) = 5 % (4) = 10 % (5) = 20 % (6) = 50 % (7) = 100 % (DC) Fig 1. Transient thermal impedance from junction to case as function of pulse duration 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.5 mA 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 500 mA 1.25 1.7 2.25 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 20 mA 0.8 1.3 1.8 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 3 of 14 BLF578 NXP Semiconductors Power LDMOS transistor Table 6. DC characteristics ...continued Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 58 70 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 16.66 A - 0.07 - Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 3 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 403 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 138 - pF Table 7. RF characteristics Mode of operation: pulsed RF; tp = 100 s; = 20 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 1200 W 23 24 25.4 dB RLin input return loss PL = 1200 W 14 17.5 - dB D drain efficiency PL = 1200 W 68 71 - % 001aaj113 900 Coss (pF) 750 600 450 300 150 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 2. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W pulsed; f = 225 MHz. BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 4 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 7. Application information 7.1 Reliability 001aaj114 105 Years (1) (2) (3) (4) (5) (6) 104 103 102 (7) (8) (9) (10) (11) 10 1 0 4 8 12 16 20 Idc (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) x 1/ . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C Fig 3. BLF578 electromigration (ID, total device) BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 5 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 8. Test information 8.1 Impedance information Table 8. Typical impedance Simulated ZS and ZL test circuit impedances. f ZS ZL MHz 225 3.2 + j2.6 3.7 - j0.2 drain ZL gate ZS 001aaf059 Fig 4. Definition of transistor impedance 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone CW pulsed 001aak926 26 Gp (dB) 80 D (%) Gp 24 001aak927 65 PL (dBm) 64 ideal PL 60 63 (2) D 62 22 (1) 40 61 20 PL 60 20 59 18 100 400 700 1000 58 0 1300 1600 PL (W) 34 36 38 40 Ps (dBm) VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 s; = 20 %. VDS = 50 V; IDq = 40 mA; f = 225 MHz; tp = 100 s; = 20 %. (1) PL(1dB) = 61.0 dBm (1260 W) (2) PL(3dB) = 61.4 dBm (1400 W) Fig 5. Power gain and drain efficiency as function of load power; typical values Fig 6. Load Power as function of source power; typical values BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 6 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 001aak928 26 001aak929 80 D (%) Gp (dB) 24 60 (1) (2) (3) (4) (4) (3) (2) (1) 22 40 20 20 18 100 400 700 1000 0 100 1300 1600 PL (W) VDS = 50 V; f = 225 MHz; tp = 100 s; = 20 %. 400 700 (1) IDq = 0 mA (2) IDq = 40 mA (2) IDq = 40 mA (3) IDq = 80 mA (3) IDq = 80 mA (4) IDq = 160 mA (4) IDq = 160 mA Power gain as a function of load power; typical values 001aak931 26 Fig 8. Drain efficiency as a function of load power; typical values 001aak933 80 (1) D (%) Gp (dB) 24 60 22 40 (4) (3) 1300 1600 PL (W) VDS = 50 V; f = 225 MHz; tp = 100 s; = 20 %. (1) IDq = 0 mA Fig 7. 1000 (2) (3) (4) (5) (5) (2) 20 20 (1) 18 100 400 700 1000 1300 1600 PL (W) IDq = 40 mA; f = 225 MHz; tp = 100 s; = 20 %. 0 100 400 (1) VDS = 30 V (2) VDS = 35 V (2) VDS = 35 V (3) VDS = 40 V (3) VDS = 40 V (4) VDS = 45 V (4) VDS = 45 V (5) VDS = 50 V (5) VDS = 50 V Power gain as a function of load power; typical values 1300 1600 PL (W) Fig 10. Drain efficiency as a function of load power; typical values BLF578_2 Product data sheet 1000 IDq = 40 mA; f = 225 MHz; tp = 100 s; = 20 %. (1) VDS = 30 V Fig 9. 700 (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 7 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 8.3 Test circuit VDD VGG C25 C1 C11 C28 C2 R3 R1 R5 T2 L1 C13 input 50 C7 C5 L3 C9 L4 L6 L8 L5 L7 L9 L10 C17 C19 L11 C16 C18 C20 output 50 C21 C24 L12 C14 C10 C8 C6 C22 C23 C15 T1 R2 R6 R4 L2 C27 C3 C12 C26 C4 VDD VGG 001aaj123 See Table 9 for a list of components. Fig 11. Class-AB common-source production test circuit C25 C11 T2 C1 C2 R1 R3 C7 C5 C9 C6 C13 C14 C21 C17 C19 C23 C10 C8 R4 C15 R2 C3 C4 T1 C28 L1 R5 C24 C16 C18 C20 C22 R6 L2 C27 C12 C26 001aaj124 See Table 9 for a list of components. Fig 12. Component layout for class-AB production test circuit BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 8 of 14 BLF578 NXP Semiconductors Power LDMOS transistor Table 9. List of components For production test circuit, see Figure 11 and Figure 12. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component Description Value Remarks C1, C2, C11, C12 multilayer ceramic chip capacitor 4.7 F TDK4532X7R1E475Mt020U C2, C3, C27, C28 multilayer ceramic chip capacitor 100 nF Murata X7R 250 V C5, C7, C8, C21, C22 multilayer ceramic chip capacitor 1 nF [1] C6 multilayer ceramic chip capacitor 30 pF [1] C9, C10, C13, C15 multilayer ceramic chip capacitor 62 pF [1] C14 multilayer ceramic chip capacitor 36 pF [1] C16, C17 multilayer ceramic chip capacitor 24 pF [1] C18 multilayer ceramic chip capacitor 30 pF [1] C19 multilayer ceramic chip capacitor 27 pF [1] C20 multilayer ceramic chip capacitor 9.1 pF [1] C23 multilayer ceramic chip capacitor 13 pF [1] C24 multilayer ceramic chip capacitor 16 pF [1] C25, C26 electrolytic capacitor 220 F; 63 V L1, L2 3 turns 1 mm copper wire D = 2 mm; length = 3 mm L3, L12 stripline - (L x W) 15 mm x 2.4 mm L4, L5, L10, L11 stripline - (L x W) 47 mm x 10 mm L6, L7, L8, L9 stripline - (L x W) 8 mm x 15 mm R1, R2 metal film resistor 2 ; 0.6 W R3, R4 metal film resistor 20 ; 0.6 W R5, R6 metal film resistor 1 ; 0.6 W T1, T2 semi rigid coax 50 ; 58 mm [1] EZ-141-AL-TP-M17 American Technical Ceramics type 100B or capacitor of same quality. BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 9 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-03-03 10-02-02 SOT539A Fig 13. Package outline SOT539A BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 10 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency TTF Time To Failure VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF578_2 20100204 Product data sheet - BLF578_1 Modifications: BLF578_1 * * * * * * * * * * Table 1 on page 1: added information for CW performance. Section 1 on page 1: changed typical value of D. Table 4 on page 2: changed maximum value of ID. Table 5 on page 3: changed value of Rth(j-c). Table 5 on page 3: added information about Zth(j-c). Figure 1 on page 3: added figure. Table 6 on page 3: added values vor VGSq. Table 6 on page 3: changed typical value of IDSX. Table 7 on page 4: changed some values. Section 8.2.1 on page 6: changed some graphs. 20081211 Objective data sheet BLF578_2 Product data sheet - - (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 11 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Non-automotive qualified products -- Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 12 of 14 BLF578 NXP Semiconductors Power LDMOS transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF578_2 Product data sheet (c) NXP B.V. 2010. All rights reserved. Rev. 02 -- 4 February 2010 13 of 14 BLF578 NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 8 8.1 8.2 8.2.1 8.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Impedance information . . . . . . . . . . . . . . . . . . . 6 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 February 2010 Document identifier: BLF578_2