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FQPF9N25C / FQPF9N25CT N-Channel QFET(R) MOSFET 250 V, 8.8 A, 430 m Features Description * 8.8 A, 250 V, RDS(on) = 430 m (Max.) @ VGS = 10 V, ID = 4.4 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. * Low Gate Charge (Typ. 26.5 nC) * Low Crss (Typ. 45.5 pF) * 100% Avalanche Tested D G G D S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter ID Drain Current IDM Drain Current VGSS Gate to Source Voltage FQPF9N25C / FQPF9N25CT 250 - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Unit V 8.8 * A 5.6 * A 35.2 * A 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 285 IAR Avalanche Current (Note 1) 8.8 A EAR Repetitive Avalanche Energy (Note 1) 7.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds TL - Derate Above 25oC 38 W 0.3 W/C -55 to +150 C 300 C FQPF9N25C / FQPF9N25CT 3.29 Unit *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. RJA Thermal Resistance, Junction to Ambient, Max. (c)2004 Fairchild Semiconductor Corporation FQPF9N25C / FQPF9N25CT Rev. C1 62.5 1 C/W www.fairchildsemi.com FQPF9N25C / FQPF9N25CT -- N-Channel QFET(R) MOSFET November 2013 Device Marking FQPF9N25C Device FQPF9N25C Package TO-220F Reel Size Tube Tape Width N/A Quantity 50 units FQPF9N25CT FQPF9N25CT TO-220F Tube N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.30 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 A VDS = 200 V, TC = 125C -- -- 100 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 A 2.0 -- 4.0 V VGS = 10 V, ID = 4.4 A -- 0.35 0.43 VDS = 40 V, ID = 4.4 A -- 7.0 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 545 710 pF -- 115 150 pF -- 45.5 60 pF On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 8.8 A, VGS = 10 V , RG = 25 (Note 4) VDS = 200 V, ID = 8.8 A, VGS = 10 V (Note 4) -- 15 40 ns -- 85 180 ns -- 90 190 ns -- 65 140 ns -- 26.5 35 nC -- 3.5 -- nC -- 13.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.8 A ISM -- -- 35.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8.8 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 218 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 8.8 A, dIF / dt = 100 A/s -- 1.58 -- C Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 5.9 mH, IAS = 8.8 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 8.8 A, di/dt 300 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. (c)2004 Fairchild Semiconductor Corporation FQPF9N25C / FQPF9N25CT Rev. C1 2 www.fairchildsemi.com FQPF9N25C / FQPF9N25CT -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 o -55 C 10 Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 1.25 1.00 VGS = 10V 0.75 0.50 VGS = 20V 0.25 1 10 0 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.00 -1 0 10 20 10 30 0.2 0.4 Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 VGS, Gate-Source Voltage [V] Capacitance [pF] Ciss Coss Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 0 -1 10 1.0 1.2 1.4 12 1500 500 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] VDS = 50V 10 VDS = 125V VDS = 200V 8 6 4 2 Note : ID = 8.8A 0 10 0 1 10 Figure 5. Capacitance Characteristics (c)2004 Fairchild Semiconductor Corporation FQPF9N25C / FQPF9N25CT Rev. C1 0 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQPF9N25C / FQPF9N25CT -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 4.4 A 0.5 0.0 -100 200 -50 0 o Figure 8. On-Resistance Variation vs Temperature 10 s 8 100 s 1 10 1 ms 10 ms DC 0 200 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 150 o Figure 7. Breakdown Voltage Variation vs Temperature 2 Notes : o 1. TC = 25 C 6 4 2 o 2. TJ = 150 C 3. Single Pulse -1 10 100 TJ, Junction Temperature [ C] 10 10 50 TJ, Junction Temperature [ C] 0 1 10 0 25 2 10 10 50 75 Figure 9. Maximum Safe Operating Area 125 150 Figure 10. Maximum Drain Current vs Case Temperature D = 0 .5 10 0 0 .2 N o te s : 1 . Z J C ( t) = 3 . 2 9 /W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 10 0 .0 2 -1 0 .0 1 PDM s in g le p u ls e JC o ZJC Thermal Z (t),(t), ThermalResponse Response[ C/W] 100 TC, Case Temperature [] VDS, Drain-Source Voltage [V] t1 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2004 Fairchild Semiconductor Corporation FQPF9N25C / FQPF9N25CT Rev. C1 4 www.fairchildsemi.com FQPF9N25C / FQPF9N25CT -- N-Channel QFET(R) MOSFET Typical Characteristics 50K 200nF 12V FQPF9N25C / FQPF9N25CT -- N-Channel QFET(R) MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2004 Fairchild Semiconductor Corporation FQPF9N25C / FQPF9N25CT Rev. C1 5 www.fairchildsemi.com FQPF9N25C / FQPF9N25CT -- N-Channel QFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2004 Fairchild Semiconductor Corporation FQPF9N25C / FQPF9N25CT Rev. C1 6 www.fairchildsemi.com FQPF9N25C / FQPF9N25CT -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2004 Fairchild Semiconductor Corporation FQPF9N25C / FQPF9N25CT Rev. C1 8 www.fairchildsemi.com FQPF9N25C / FQPF9N25CT -- N-Channel QFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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