INO RDER OF (1) MAX RISE TIME, (2) fab & 0. s 12. SWITCHING TRANSISTORS (3) TYPE N N 3] 2] TIMAX | MAX | MAX | MAX [MAX. Pc _ BIAS OWG #{CC uN E TYPE | RISE DELAY] STORE| FALL |IN FREE | MAX. Cob bb |STRUCTURE|M|MAX. |Y200 EO 9. No. fab TIME TIME TIME TIME AIR @ Veb le hFE SAT. x P-PNP A|TEMP| s/a AD tha) ig i is) iy ow al RES. Cob |N-NPN T TO200 IDE s s 2 F s C. f. T# [BU209 7.0ME TOut [7OOnt | 12 SA [6.0 3.00 |22 4 re ws is). rN Si Ye rea CD 2 |BU209A 7.0M5 10u_|.70u 12 5.0% (300 |22A N si |115 |TO3 AD 3__{BUV23 0 BOMASY 35- 2.5u 1.2u 250 16D) 8 ND Si T03 | 4# {BUV24 8.0MAS 1.6u 3u 11.40 250 40@ 600 | i5a N ~TSi_ [3005 [TOS A 5 |BUVv25 8.0MAS 1.8 5.0u 1.6u 250 8| 8 ND Si TO3 6# |BUXII4A | B.OMSA 1.5uM [1.80 __ _la00n 150 4.0 % |6.0 20 A# N-E Si_|200 |TO3 cg |) 7# TBUXTING 8.0MSA T.5uG | 1.5u 500n_ | 150 4.00 | 18 @| 10 A# an N-E Si [2005 |TO3 CS 8# (BUX124 8.0M5A 1.0ug |2.0u 500n_ |150 4.0 G |5.0 20 A# N-E Si |200J |TO3 cS 9# |BUXI32 | _8.0MBA | _ _{1.2ud 2.5u 1.0u [150 40G |40 | 15 A# N-E Si_1200J |TO3 (7) 10% |BUXT44 8.OMBA 14ud 13.0u 12u 150 406 {30 | 15 A# ~y N Si 2005 TOS Cs 11 |BUX307 8.0M8A 1.5u 1.0u 300n = |120 40% | 12 15 A# N-E Si 1100J 1TO3 ce | 12# |BUX41f =| BomsAT 4. 3u 4. 7u 800n__ {120 4.0 % |5.0 15 A# -E si_|200g |T03 cy 13# |BUX41NZG 8.OMSA T3ugT1bu 800n |120 4.0 2 18.0 15 A# ~~ TNE Si [200 |TO3 CS 14# |BUX427) 8.0M8A 1.0ug | 2.0u 1.2u 120 40 |4.0 15 A# N-E Si 12005 |TO03 cg 15# [BUX43| | somsal | 1.0um 2.20 1.2u_ 1120 402 |3.0 | 15 A# _. N Si_|200J |TO3 (37) 16 [BUX44 8.0M5A TOu@ [2.5u T2u 120 4.0 @ 12.0 15 A# N-E Si [200J [TO3 CO 17# |BUX457 8.0MSA 10u8 |5.0u 1.2u 120 40 |1.0 15 AF N-E si |200J |TO3 ce 18 |BU104D | toms |. ___|o.8u as 70G| 7a D Si TO3 19 |BUT09D 10M5 0.8u 85 TOG! TA [Do [si 1 TOS 7 20# }2SA1024H 15MS 400m 20 Z| 20mg|200 * 10p P Si }150J|TO18 |A 21# |2SA1126H 4 ISM8 | _. 750m 20 DI] 20mgi200 * ___ | 25pi Po Si_]150J |TO39 A 22# [2SC2635H 15M 750m 20 S| 20mg{200 N Tsi [150J 1T039 [A 23# |AUIO3 15.0M8 3.0u 1.7u 10mG 11.0 G | 10H] 15 70 PDA Ge| 90J |TO3 ce | 24# |28C2939 |) 2oms |. ___[1.0uG__ [2.00 0.5u_ |100_ 2.0 Z |5.0 | 10 _ iN Si_|150. |[TO3 D 25# |BUX85 20M5 3.5u 40u 40 6 15.0 g |.10 @ | 50 l N Si 1150J [220 [BD 26 |BDYS7A 30M8 1.0u% 2.0ug 4175 406 | 200} 15 # N Si }200J ]y204a |C _27__ |BDY58R 48mMs | 1.0ud | . _-|2.0u@_ 4175 4.0% | 20 ZG! 20 # to N__[Si {2004 |y204a_ [Cc | 28# |BFP22 GOMAS 1.Om 10 S| 50mg) 30 A P-PE Si {150J |TOSZ {0 297 |BFP23 60MA8 830m 20 G| 25mg) 30 A N-PE si |150J|TO92 {D | 30 |7SQ-3467D/__ | 125M8A _ | 40nf | 90ne 2.7 500mg] 20 A 25p | IP. Si |200J |TO116 31 1TSQ-3467F/C 125M8A 40nd | 9OnS 27 500mg] 20 A 25pi P Si [200J [TO86 32# |BC190A 150MAS 300m 5.0 @ ]2.0m 1240 6.0pi4 N Si TO18 _33# |BC190B | 150MA8| ot 300m 5.0 |2.0m |450 A 6.0p7 N Si Tois | | 34 1TSQ-3762D/C 150M8A 40nd |T10nS 5.0 2001100 | 204A 20pia P Si 12007 [TO116 35 {|1TSQ-3762F/C 150M8A 40nG |110nd 5.0 20G 110G | 204 20pA P si |200J [To86 36 |BSR15 200MAS ee eee 200m 150mg] 100 A |p si |150J |TO236_ |A 37 {BSR16 200MAS 200m 150mAi 100 A P Si [1503 1TO236 JA 38 |s02906 200MA& 175n@ 250m 150mg] 40 A 8.0pH P Si 1150J |[TO236 |A | 39. |SO2906A _ 200MA8]_ __ |175nw 250m 150mZ,_ 40 A 8.0piA P Si_ 1505 |TO236 JA 40 ~~ /S02906R 200MA8 175n@ 250m 150mgZ] 40 A 8.0p P Si [150J /TO236 {C 41 |'02907 200MAS 200nd 250m 150mZ| 100 A 8.0piZ P Si |150J }TO236 |A 42 |02907A _[ 200mMasl ss tC [200 250m 150m|100 A __ 18.00) IP si [150J [T0236 _|A [43 /$02907R 200MAS 200no 250m T50mZ{ 100 A 8.0piA P Si |150J [TO236 JC 44 |TS-1134 200M5A 25n@ |250nd 1.9 10 G|500mg} 30 A# 8.0piA N si |200J T0116 | | 45 |TSQ-2222F/C | 200MSA 25nO |250nd _|1g9 10 Z|500mg}_ 30 A# 8.0! N Si |200u |TO86 __ 46 ~~ )SQ-3907D/C | 200M8A 30nG [100nS 3 10 G{300ma) 50 A 8.0pI P Si [200s (TOME 47 |TSQ-2907F/C 200MSA 30nd |100nd 1.9 10 Z |300mg) 50 A# 8.0pZ P si |200J jTO86 | 48% |2TX310 _ __ | 200M8Al ____| 60n 300m. __|1.0 | 10mg] 20 60 6.0pU N-PL Si